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Study on Room Temperature Operation of PbSrS and PbEuS 3 Mum Lasers

PbSrS和PbEuS 3 Mum激光器室温工作研究

基本信息

批准号：
01550241
负责人：
ISHIDA Akihiro
金额：
$ 1.47万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550241/
关键词：
PbS PbSrS PbEus Infrared Laser Hot wall epitaxy IV-VI compound semiconductor ホットウォ-ル蒸着法 IV-VI族半導体レ-ザ超格子量子井戸赤外線

项目摘要

To obtain 3 mum lasers operating at room temperature, PbS single crystal growth, PbSrS/PbS DH and MQW lasers and HWE growth of PbCdSrS films lattice matched with the PbS substrate were studied. For single crystal growth of PbS, dependence of growth on substrate rod materials were mainly studied, Therod materials used for the growth were BaF_2 (111), SiO_2 glass, Al_2O_3(1000), and Al_2O_3(0101^^-). When SiO_2 glass and Al_2O_3 (0101) were used as the substrate rod, a large single crystal was obtained reproducibly. For PbSrS/Pbs DH laser, highest operating temperature was obtained at the active layer thickness of 0.5 mum. In the laser, lattice mismatch between PbSrS cladding layer and PbS active layer resulted in lattice strain of the PbS active layer. With increasing active layer thickness, the strain effect grad ually decreased and the lattice mismatch resulted in many misfit dislocations at the interface. For PbSrS/PbS MQW laser, increase of the operating temperature was not observed, but increase of the characteristic temperature, which shows a possibility to increase the operating temperature, was observed. PbCdSrS films lattice matched with PbS was also studied using the HWE growth technique, and good quality films were obtained.

为了获得3 μ m激光器在室温下工作，PbS单晶生长，PbSrS/PbS DH和MQW激光器和HWE生长的PbCdSrS薄膜晶格匹配的PbS衬底进行了研究。对于PbS单晶的生长，主要研究了生长对衬底棒材料的依赖性，所用的棒材料为BaF_2（111）、SiO_2玻璃、Al_2O_3（1000）和Al_2O_3（0101^^-）。当用SiO_2玻璃和Al_2O_3（0101）作基棒时，可重复地获得大单晶。对于PbSrS/PbS DH激光器，在0.5 μ m的有源层厚度处获得最高的工作温度。在激光器中，PbSrS包覆层和PbS活性层之间的晶格失配导致PbS活性层的晶格应变。随着有源层厚度的增加，应变效应格拉德减小，晶格失配导致界面处出现大量的失配位错。对于PbSrS/PbS MQW激光器，没有观察到工作温度的增加，但是观察到特征温度的增加，这表明工作温度增加的可能性。利用HWE生长技术研究了PbCdSrS薄膜与PbS的晶格匹配，获得了质量较好的PbCdSrS薄膜。