Studies on Semiconductor Quantum Wells and Long-Wavelength Infrared Lasers
半导体量子阱与长波红外激光器研究
基本信息
- 批准号:12650309
- 负责人:
- 金额:$ 2.37万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We studied IV-VI semiconductor films and quantum wells for interband mid-infrared laser applications, and AlGaN-based quantum wells for intersubband quantum-cascade laser applications. In IV-VI semiconductors, we prepared PbSrS/PbS lasers for 3-4μm region and PbCaTe/PbTe lasers for 4-6μm region, and obtained pulsed laser operation up to 235K in the PbCaTe/PbTe MQW laser. We also studied PbSnCaTe films and PbSnCaTe/PbSnTe superlattices for longer wavelength laser applications around 6-20μm. The heterojunction becomes type-I which is useful for effective confinements of electrons and holes in the PbSnTe active layer. In the AlGaN system for intersubband laser applications, we prepared high quality AlGaN based films and superlattices by hot wall epitaxy. We proposed (AlN)_1/(GaN)_n short-period superlattices consisting of one atomic layer AlN and around 10 atomic layers of GaN for mid-infrared intersubband lasers, and also proposed [(AlN)_1/(GaN)_<n1>]_m/(AlN)_<n2> quantum cascade structures which utilize large polarization fields in the AlN/GaN to inject electrons into higher subbands. We prepared the short-period superlattices and the quantum-cascade structures by hot wall epitaxy and well-controlled structures were confirmed by X-ray diffraction and TEM measurements.
我们研究了用于带间中红外激光应用的IV-VI族半导体薄膜和量子威尔斯,以及用于子带间量子级联激光应用的AlGaN基量子威尔斯。在Ⅳ-Ⅵ族半导体中,我们制备了3-4μm的PbSrS/PbS激光器和4-6μm的PbCaTe/PbTe激光器,并在PbCaTe/PbTe多量子阱激光器中获得了235 K的脉冲激光运转。我们还研究了PbSnCaTe薄膜和PbSnCaTe/PbSnTe超晶格在6-20μm波长激光器中的应用。异质结变成I型,这对于PbSnTe有源层中的电子和空穴的有效限制是有用的。在用于子带间激光器的AlGaN系统中,我们采用热壁外延法制备了高质量的AlGaN基薄膜和超晶格。我们提出了由1个AlN原子层和10个左右GaN原子层组成的短周期超晶格(AlN)1/(GaN)n,用于中红外子带间激光器,并提出了利用AlN/GaN中的大极化场将电子注入到更高子带的[(AlN)1/(GaN)<n1>] m/(AlN)n<n2>量子级联结构。我们用热壁外延法制备了短周期超晶格和量子级联结构,并通过X射线衍射和透射电子显微镜测量证实了其结构的可控性。
项目成果
期刊论文数量(22)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A.Ishida, T.Ose, H.Nagasawa, Y.Inoue, H.Tatsuoka, H.Fujiyasu, H.J.Ko, H.Makino, T.Yao, H.Kan: "Characterization of AlN/GaN Quantum Cascade Structures Prepared by Hot-Wall Epitaxy"Phys. Stat. Sol. (c). 0・1. 520-523 (2002)
A.Ishida、T.Ose、H.Nagasawa、Y.Inoue、H.Tatsuoka、H.Fujiyasu、H.J.Ko、H.Makino、T.Yao、H.Kan:“AlN/GaN 量子级联结构的表征热壁外延“Phys. Stat. Sol. (c). 0・1. 520-523 (2002)
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A.Ishida, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue, H.Fujiyasu: "Quantum-Cascade Structure in A1N/GaN System Assisted by Piezo-Electric Effect"Jpn.J.Appl.Phys.Part2,. 41・3A. 236-238 (2002)
A.Ishida、T.Ose、H.Nagasawa、K.Ishino、Y.Inoue、H.Fujiyasu:“压电效应辅助的 A1N/GaN 系统中的量子级联结构”Jpn.J.Appl.Phys.Part2 ,. 41・3A. 236-238 (2002)
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A.Ishida, T.Ohashi, S.Wang, T.Tsuchiya, K.Ishino, Y.Inoue, H.Fujiyasu: "PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy"Jpn. J. Appl. Phys.. 41(1)・6A. 3655-3657 (2002)
A.Ishida、T.Ohashi、S.Wang、T.Tsuchiya、K.Ishino、Y.Inoue、H.Fujiyasu:“分子束外延制备的 PbSnCaTe 薄膜和 PbSnCaTe/PbSnTe 超晶格”J. Appl。 41(1)·6A(2002)
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A.Ishida, M.Kitano, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue, H.Fujiyasu, H.Kan, H.Makino and T.Yao: "AlN/GaN Short-Period Superlattices with Monolayer AlN for Optical-Device Applications"Physica E. Vol.13. 1098-1101 (2002)
A.Ishida、M.Kitano、T.Ose、H.Nagasawa、K.Ishino、Y.Inoue、H.Fujiyasu、H.Kan、H.Makino 和 T.Yao:“单层 AlN/GaN 短周期超晶格
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A.Ishida, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue, H.Fujiyasu: "Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect"Jpn. J. Appl. Phys.. 41(2)3A. L236-L238 (2002)
A.Ishida、T.Ose、H.Nagasawa、K.Ishino、Y.Inoue、H.Fujiyasu:“压电效应辅助的 AlN/GaN 系统中的量子级联结构”Jpn。
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ISHIDA Akihiro其他文献
ISHIDA Akihiro的其他文献
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{{ truncateString('ISHIDA Akihiro', 18)}}的其他基金
Development of new treatments for nasal diseases through novel target molecules
通过新型靶分子开发鼻疾病新疗法
- 批准号:
24791742 - 财政年份:2012
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
Study on Room Temperature Operation of PbSrS and PbEuS 3 Mum Lasers
PbSrS和PbEuS 3 Mum激光器室温工作研究
- 批准号:
01550241 - 财政年份:1989
- 资助金额:
$ 2.37万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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