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Development of the Non-Contact Characterization Techniques of Minority Carrier Lifetime and Surface Recombination Conditions of Semiconductor Wafers

半导体晶片少子寿命和表面复合条件非接触表征技术的发展

基本信息

批准号：
01550246
负责人：
USAMI Akira
金额：
$ 0.26万
依托单位：
Nagoya Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

项目摘要

From the theoretical analysis of the photoconductivity decay method (WLT) with small alpha delta-function carrier injection pulse and photoconductivity modulation method (SRMI and R-SRMI) with large alpha carrier injection pulse, it is found that SRMI and R-SRMI are more sensitive than the WLT method. Furthermore, R-SRMI method is insensitive to tau_b, because the R-SRMT signal is defined as the value subtracted SRMI (large alpha injection) from the BRMI (small alpha injection). The R-SRMI has inverse relation to SRMT and is related to S_<eff> closely. The R-SRMI is insensitive to tau_b and is very suitable for i) different condition Si wafers, especially surface active region, ii) a wafer which has distribution of tau_b and/or resistivity in LST processes. SRMI and R-SRMI measurements can reduce the calculation time compared to the photoconductivity decay curves analysis (WLT ; tau_b and S_<eff>).The laser-microwave characterization systems (WLT, SRMI and R-SRMI measurement) are successively applied to several wafer processes, detection of surface contamination of the starting wafer, oxidation and its dry etching, ion implantation and annealing processes, junction formation by impurity diffusion, alloying processes etc. The change of the SRMI and/or R-SRMI at contaminated wafer surface are two to three times larger than those of WLT values. The SRMI and R-SRMI mapping measurement systems with laser-microwave are convenient, practical and useful ways for characterizing the Si wafer in various device fabrication processes.

通过对小α-δ函数载流子注入脉冲的光电导衰减法（WLT）和大α载流子注入脉冲的光电导调制法（SRMI和R-SRMI）的理论分析，发现SRMI和R-SRMI比WLT法灵敏。此外，R-SRMI方法对tau_B不敏感，因为R-SRMT信号被定义为从BRMI（小α注入）中减去SRMI（大α注入）的值。R-SRMI与SRMT成反比关系，与S_（1/2）密切相关<eff>。R-SRMI对τ_B不敏感，特别适用于不同条件的硅晶片，特别是表面活性区，以及在LST工艺中具有τ_B和/或电阻率分布的晶片。与光电导衰减曲线分析（WLT ; τ_B和S_）相比，SRMI和R-SRMI测量可以减少计算时间<eff>。（WLT、SRMI和R-SRMI测量）相继应用于几个晶片工艺、检测起始晶片的表面污染、氧化及其干法蚀刻、离子注入和退火工艺、通过杂质扩散形成结，在污染晶片表面处的SRMI和/或R-SRMI的变化比WLT值的变化大两到三倍。SRMI和R-SRMI激光-微波映射测量系统是一种方便、实用和有用的方法，用于表征各种器件制造工艺中的Si晶片。