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Measurement method of in-depth profiles of recombination lifetime in epitaxial Si layer with test element pattern

用测试元件图案深入测量外延硅层复合寿命的方法

基本信息

批准号：
03650259
负责人：
USAMI Akira
金额：
$ 0.32万
依托单位：
Nagoya Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03650259/
关键词：
lifetime of epitaxial Si lifetime measurement system in-depth profile lifetime of the interface buffer layer lifetime and reverse current photodiode thermal donor in epitaxial layer サーマル・ドナー再結合ライフタイムエピタキシー・ウェーハバッファ-層エピ層中の酸素ドナ-

项目摘要

For the high quality Si Photodetector, the high resistivity epitaxial wafer using the low resistivity substrate were studied. The butter layer was introduced in the interface, and it was very effective on the crystal quality of the epitaxial layer (epilayer). Recombination lifetime of a epilayer is automatically measured by using the conductivity modulation technique. A lateral p^+-n^--n^+ diode test structure on the surface of the epilayer is formed to evaluate the minority carrier lifetime. Depth profiles of the recombination lifetime are obtained from current-voltage curves of a lateral p^+-n^--n^+ diode and a vertical n^+-n^--n^+ structure between the substrate and the top surface. We measure the lifetime in epilayers with and without a buffer-layer. In addition, photo-response of photodiodes with and without the buffer-layer is measured. Profiles of the recombination lifetime depend on the thickness of the epilayer but not on the thickness of the buffer-layer. Recombination lifetime in the epilayer became very uniform and long even in the interface region which was confirmed by measuring the lifetime depth profiles. Then Si Photodiode was fabricated on the above high quality epitaxial wafer and its epitaxial wafer and its optoelectric characteristics was evaluated. The observation of oxygen atoms from the substrate into the epilayer during thermal oxidation. The oxygen in the epilayer was diffused from the substrate.

为了获得高质量的硅光电探测器，研究了低阻衬底上的高阻外延片。在界面处引入黄油层，对外延层的结晶质量有很大的影响。采用电导调制技术自动测量外延层的外延寿命。在外延层表面形成横向p^+-n^--n^+二极管测试结构，以评估少数载流子寿命。复合寿命的深度分布由横向p^+-n^--n^+二极管和衬底与顶面之间的垂直n^+-n^--n^+结构的电流-电压曲线得到。我们测量了有和没有缓冲层的外延层的寿命。此外，光电二极管的光响应与没有缓冲层进行了测量。复合寿命的分布依赖于外延层的厚度，但不依赖于缓冲层的厚度。外延层中的外延寿命变得非常均匀，甚至在界面区也很长，这一点通过测量寿命深度剖面得到了证实。然后在上述高质量外延片及其外延片上制作了硅光电二极管，并对其光电特性进行了评价。热氧化过程中氧原子从衬底进入外延层的观察。外延层中的氧从衬底扩散。