Exploring Study of Novel Properties in Artificially Stacked Materials Grown by van der Waals Epitaxy

范德华外延人工堆叠材料新性能的探索研究

• 批准号: 02102002
• 负责人: KOMA Atsushi
• 金额: $ 140.8万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Specially Promoted Research
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02102002/
• 关键词: van der Waals Epitaxy; Artificially Stacked Materials; STM; Organic Thin Films; Lavered Materials; Modulated Structure; Interface; ファンデルワールス・エピタキシー; 層状物集; ファンデルワ-ルス・エピタキシ-; ヘテロ構造; C_<60>; 有機超薄膜; 超格子; ファンデルワ-ルスエピタキシ-; 原子モアレ縞; RHEED振動

This project has been fulfillled to create new artificially stacked materials made of highly heterogeneous layrs and to explore novel properties they show. By extending the idea of van der Waals epitaxy developed by us we have succeeded to grow various kinds of heterostructures. The concept of dangling bond termination has made it possible to grow many layred materials on such ordinary three-dimensional materials as GaAs and Si. Good epitaxial films of fullerene and many organic molecular meterials have also been fabricated successfully. Success in heteroepitaxy between lattice-mismatched alkali halides or polar organic materials on alkali halide by using electrostatic interaction has also increased the possible combination of materials in heteroepitaxy. New properties found and investigated in the present project include moiree-type modulation in STM image, polytype and charge density state formations in ultrathin films, control of optical properties of phthalocyanien films by stacking and anomaly in surface polariton dispersion in ultrathin epitaxial films of alkali halides. Crystal growth, crystal structure, electronic properties, superconductivity dielectric properties in the artificially stacked structures have been investigated theoretically by means of Monte Carlo study, Band, calculation, Quantum Monte Carlo study of analytical method. The occurrence of superconductivity due to nonretarded attraction has been demonstrated in a class of repulsively interacting electron systems that consist of a carrier band interacting with an insulting band.

该项目已经完成，以创建由高度异质层制成的新的人工堆叠材料，并探索它们显示的新特性。通过推广我们发展的货车德瓦耳斯外延的思想，我们成功地生长了各种异质结构。悬键终止的概念使得在诸如GaAs和Si等普通三维材料上生长许多层状材料成为可能。并成功地制备了富勒烯和多种有机分子材料的良好外延膜。晶格失配的碱金属卤化物或极性有机材料通过静电相互作用在碱金属卤化物上的异质外延的成功也增加了异质外延中材料的可能组合。在本项目中发现和研究的新特性包括STM图像中的莫尔型调制，在GaN薄膜中的多型体和电荷密度态的形成，通过堆叠控制酞菁薄膜的光学性质，以及碱金属卤化物GaN外延薄膜中的表面极化激元色散异常。本文采用Monte Carlo研究、能带计算、量子Monte Carlo研究等分析方法，对人工叠层结构中的晶体生长、晶体结构、电子性质、超导介电性质等进行了理论研究。在一类由载流子带与绝缘带相互作用的排斥相互作用电子系统中，由于非延迟吸引而发生超导。

项目成果

H.Tada, T.Kawaguchi and A.Koma: "Epitaxial Growth of Vanadyl-Phthalocyanine Ultrathin Films on Hydrogen-Terminated Si (111) Surfaces" Appl.Phys.Lett.61. 2021-2023 (1992)

H.Tada、T.Kawaguchi 和 A.Koma：“氢终止 Si (111) 表面上氧钒基酞菁超薄膜的外延生长”Appl.Phys.Lett.61。

M.Sakurai,H.Tada,K.Saiki and A.Koma: "Van der Waals Epitaxial Growth of C60 Film on a Cleaved Face of MoS_2" Jpn.J.Appl.Phys.30. L1892-L1894 (1991)

M.Sakurai、H.Tada、K.Saiki 和 A.Koma：“C60 薄膜在 MoS_2 裂面上的范德华外延生长”Jpn.J.Appl.Phys.30。

M.Sakurain,H.Tada,K.Saiki A.Koma,H.Funasaka and Y.Kishimoto: "Epitaxial Growth of C_<70> Films on GaSe(0001) and MoS_2(0001) Surfaces" Chem.Phys.Lett.208. 425-430 (1993)

M.Sakurain、H.Tada、K.Saiki A.Koma、H.Funasaka 和 Y.Kishimoto：“C_<70> 薄膜在 GaSe(0001) 和 MoS_2(0001) 表面上的外延生长”Chem.Phys.Lett。

K.Kuroki and H.Aoki: "Realization of Negative-U Superconductivity in a class of Purely Requlsive Systems" Phys.Rev.Letl.69. 3820-3823 (1992)

K.Kuroki 和 H.Aoki：“在一类纯 Requlsive 系统中实现负 U 超导”Phys.Rev.Letl.69。

A.Koma,K.Ueno and K.Saiki: "Heteroepitaxial Growth by van der Waals Interaction in One-,Two-and Three-dimensional Materials" J.Crystal Growth. 111. 1029-1032 (1991)

A.Koma、K.Ueno 和 K.Saiki：“一维、二维和三维材料中范德华相互作用的异质外延生长”J.Crystal Growth。