Fabrication and Physical Properties of Organic-Inorganic Superlattice
有机-无机超晶格的制备和物理性质
基本信息
- 批准号:05452093
- 负责人:
- 金额:$ 4.67万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1993
- 资助国家:日本
- 起止时间:1993 至 1994
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This project was aimed at the fabrication and the pursuit of novel physical properties of organic-inorganic epitaxial superlattices. The method of fabrication was van der Waals epitaxy, which utilizes molecular beam epitaxy technique to van der Waals interfaces. The results obtained are as follows : (1) The first example of organic-inorganic EPITAXIAL superlattice has been presented using KBr-VOPc (vanadyl phthalocyanine) system.(2) By using AFM (atomic force microscope), it has been found that the morphology of the grown organic films can be controlled by changing the substrate temperature and molecular beam flux. This result is important to fabricate atomically uniform superlattices.(3) It was demonstrated that the molecular orientation can be controlled by regularly-spaced steps of vicinal substrates. This method is expected to be useful to suppress the formation of multi-domain structure which deteriorates the crystallinity of organic-inorganic superlattices. It will also be useful to fabricate 'quantum wells' , or onedimensionally ordered structure of organic molecules.(4) Capping of organic micro structure by inorganic material for protection is achieved for the first time by using the idea of organic-inorganic superlattice.(5) As new materials combinations for organic-inorganic heteroepitaxy, metal phathalocyanines on Se-terminated GaAs (111) substrates, and squaric acid (C_4H_2O_4) on alkali halides were introduced.
本项目旨在制备和追求有机-无机外延超晶格的新的物理性能。制备方法是范德华外延,它利用分子束外延技术在范德华界面上生长。主要研究结果如下:(1)首次利用KBr-VOPc(钒基酞菁)体系制备了有机-无机外延超晶格。(2)利用原子力显微镜发现,通过改变衬底温度和分子束流密度可以控制生长的有机薄膜的形貌。这一结果对制备原子均匀的超晶格具有重要意义。(3)证明了分子取向可以通过相邻衬底的规则间距来控制。这种方法有望有效地抑制有机-无机超晶格中多域结构的形成,从而降低其结晶度。利用有机-无机超晶格的思想,首次实现了无机材料对有机微结构的封顶。(5)作为有机-无机异质外延的新材料组合,在Se端基的GaAs(111)衬底上引入了金属酞菁,在碱金属卤化物上引入了方酸(C_4H_2O_4)。
项目成果
期刊论文数量(43)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
N.Nishida,K.Saiki,A.Koma: "Photoemission study of alkali halide/covalent semiconductor heterostructures" Surf.Sci.304. 291-297 (1994)
N.Nishida、K.Saiki、A.Koma:“碱金属卤化物/共价半导体异质结构的光发射研究”Surf.Sci.304。
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- 影响因子:0
- 作者:
- 通讯作者:
H.Tada,T.Morioka,A.Koma: "“Epitaxial growth of ultrathin vanadyl-naphthalocyanine films on RbI,KI and KBr"" J.Phys.,Condens.Matter. 6. 1881-1892 (1994)
H.Tada、T.Morioka、A.Koma:“超薄氧钒基萘酞菁薄膜在 RbI、KI 和 KBr 上的外延生长””J.Phys.,Condens.Matter. 6. 1881-1892 (1994)。
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- 影响因子:0
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T.Kawaguchi,H.Tada,A Koma: "“Angle resolved ultraviolet photoelectron spectroscopy of epitaxial films of vanadyl phthalocyanine grown on alkali halides"" Appl.Phys.(印刷中). (1994)
T. Kawaguchi、H. Tada、A Koma:“在碱金属卤化物上生长的酞菁氧钒外延膜的角分辨紫外光电子能谱”Appl. Phys.(出版中)。(1994 年)
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- 影响因子:0
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H.Tada, T.Kawaguchi, A.Koma: ""Epitaxial growth of metal-phthalocyanines on hydrogen-terminated Si (111) surfaces"" Appl.Surf.Sci.75. 93-98 (1994)
H.Tada、T.Kawaguchi、A.Koma:“金属酞菁在氢封端的 Si (111) 表面上的外延生长”Appl.Surf.Sci.75。
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- 影响因子:0
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K.Saiki,Y.Nakamura,N.Nishida,W.Gao,A.Koma: "“Heteroepitaxy of alkali halide on Si and GaAs substrates"" Surf.Sci.301. 29-38 (1994)
K.Saiki、Y.Nakamura、N.Nishida、W.Gao、A.Koma:“硅和砷化镓衬底上碱金属卤化物的异质外延”Surf.Sci.301 (1994)。
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- 影响因子:0
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KOMA Atsushi其他文献
KOMA Atsushi的其他文献
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{{ truncateString('KOMA Atsushi', 18)}}的其他基金
Fabrication of their properties
制造它们的属性
- 批准号:
10305002 - 财政年份:1998
- 资助金额:
$ 4.67万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Exploring Study of Novel Properties in Artificially Stacked Materials Grown by van der Waals Epitaxy
范德华外延人工堆叠材料新性能的探索研究
- 批准号:
02102002 - 财政年份:1990
- 资助金额:
$ 4.67万 - 项目类别:
Grant-in-Aid for Specially Promoted Research
相似国自然基金
系列酞菁光敏剂抗肿瘤活性研究
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- 批准年份:2009
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