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Development of reliability evaluation with ultrasonic and residual stress analyses on fabricating multilayered structure ultra LSIs

利用超声波和残余应力分析对多层结构超大规模集成电路进行可靠性评估的进展

基本信息

批准号：
02555022
负责人：
KOBAYASHI Hideo
金额：
$ 8.7万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555022/
关键词：
LSI Multilayered Residual stress Thin film Ultra sonic X-ray Scanning acoustic microscope 超LSI 力学的特性表面波音速

项目摘要

Multilayered structure ultra LSI is hoped as a device with which ultra high integrated circuit can be made. In this ULSI, residual stresses yield at fabrication and this residual stresses bring the ULSI some troubles. Therefore, the residual stresses are important for evaluating the reliability of the ULSI. In this study, elastic moduluses of thin films on the substrate were evaluated with a scanning acoustic microscope on the first, and the residual stresses were measured with a X-ray method on the second. On the third, the residual stresses were analyzed with a finite element method and the internal defect like plastic deformation of the aluminium lead line was evaluated with a scanning acoustic microscope on the last. The results obtained are as follow. (1) The elastic modulus of a thin film on a substrate can be evaluated with a scanning acoustic microscope based on the analyze of ultra sonic wave propagation. (2) The elastic modulus of the aluminum on the substrate is 10% lower than the bulk data. (3) The residual stresses near the interface have stress singularity with a X-ray method. (4) The residual stresses measured with a X-ray method have large scatter band but the mean value does not change largely. (5) The residual stresses calculated with the 2-dimensional FEM model gives bad approximation but good one will be obtained if the result based on the plain stress model and on the plain strain model are superimposed. (6) The internal defect like th plastic deformation can be observed with a scanning acoustic microscope.

多层结构超大规模集成电路有望成为制造超高集成度电路的器件。在这种ULSI中，在制造时产生残余应力，并且这种残余应力给ULSI带来一些麻烦。因此，残余应力对于评估ULSI的可靠性是重要的。在这项研究中，在基板上的薄膜的弹性模量进行了评估与扫描声学显微镜上的第一，和残余应力进行了测量与X射线方法上的第二。第三，用有限元法分析了铝引线的残余应力，最后用扫描声学显微镜对铝引线的塑性变形等内部缺陷进行了评价。所得结果如下。(1)基于对超声波传播特性的分析，可以用扫描声显微镜测量基片上薄膜的弹性模量。(2)基板上的铝的弹性模量比体数据低10%。(3)用X射线法分析了界面附近的残余应力具有应力奇异性。(4)用X射线法测得的残余应力有较大的散射带，但平均值变化不大。(5)用二维有限元模型计算的残余应力近似性较差，但将平面应力模型和平面应变模型的结果叠加，可以得到较好的近似结果。(6)用扫描声显微镜观察到了类似塑性变形的内部缺陷。