Graphoepitaxial Growth of Semiconductor Thin Film on the Textured Natural Crystalline Surface Relief Duplicated on a Foreign Substrate

半导体薄膜在异质基板上复制的纹理化天然晶体表面浮雕上的图形外延生长

• 批准号: 02650224
• 负责人: TAKAKURA Hideyuki
• 金额: $ 1.41万
• 依托单位: Toyama Prefectural University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02650224/
• 关键词: Graphoepitaxy; Germanium; Thin Film; Euectic Alloy; Solar Cell; シリコン

According to the epitaxial growth mechanism, it can be expected that single crystalline thin film could be grown on any substrates of quite different crystalline structure if certain perturbation with some crystallographic period and symmetry were written on the amorphous substrate surface and the crystal growth were affected by the periodic pattern. This technology is generally called "Graphoepitaxy". The purpose of this work is the establishment of a technology to produce a large area single crystalline semiconductor thin film utilizing this graphoepitaxial growth phenomenon and assessment of the probability of the application to a semiconductor devices which requires a very large area such as solar cells and display devices.In 1990, an infrared light annealing apparatus was newly introduced and got basic technical data on the recrystallization of Ge film. It is also pursued that the same kind of graphoepitaxial growth from eutectic alloy would be occurred as was seen in Ge graphoepi … More taxy in our previous work. However, Si reacts with alloy metal aswell as the substrate and it is very difficult to obtain large single crystalline Si thin film. It was decided from this results, to revise, the main purpose to establish a technique to produce large area growth of Ge from Si graphoepitaxy. In 1991, a new structure of the graphoepitaxial growth substrate was proposed and the fabrication technique was established. The substrate relief in this work has the shape of pyramid fabricated by a selective etching of Si(100)wafer. Our previous substrate had this pyramidal relief on whole area of substrate. Crystallographic orientation of grown crystallite was controlled by the surface relief of each growing sites. However, very small orientation mismatch create many grain boundaries and obtained grain size is around 0.01mm at most. New structure is partially textured one. The size of the textured part is determined to be the same order of the grain size in our previous work on which we can made single grain crystal. On the remained area, semiconductor film could be grown laterally utilizing the graphoepitaxially grown single grain on the textured part as a seed. Systematic technical data on the substrate fabrication were collected using Si(100)wafers. The partially textured Si wafer was oxided to prevent epitaxial growth, and W, Al and Ge were deposited successively. After that, Ge film was recrystallized by infrared light annealing apparatus. Annealed Ge film on the flat substrate had(111)texture which is essentially required condition in graphoepitaxy. However we cannot see graphoepitaxy phenomenon on the pyramidal relief part. Careful characterization of grown Ge film implied that annealing temperature is not sufficient as compared with the annealing by Ar laser. More rapid and higher temperature annealing of more than 600ﾟC is found to be necessary. Less

根据外延生长机理，只要在非晶衬底表面写入具有一定结晶周期和对称性的微扰，并使其周期性图案影响晶体生长，就可以在任何晶体结构完全不同的衬底上生长单晶薄膜。这种技术通常被称为“图形外延”。本研究的目的是建立利用这种图形外延生长现象制造大面积单晶半导体薄膜的技术，并评估其应用于太阳能电池和显示装置等需要非常大面积的半导体器件的可能性。介绍了一种新的红外光退火装置，获得了Ge薄膜再结晶的基本技术数据。它也追求同样的graphoepitaxial生长从共晶合金会发生，因为是在Ge graphoepi ...更多信息 taxy在我们以前的工作。但是，Si与合金金属以及衬底反应，并且很难获得大的单晶Si薄膜。这是决定从这个结果，修改，主要目的是建立一种技术，以产生大面积生长的锗从硅图形外延。1991年，提出了一种新的图形外延生长衬底结构，并建立了制造技术。本工作中的衬底浮雕具有通过选择性蚀刻Si（100）晶片制造的金字塔形状。我们以前的基板上有这个金字塔救济整个地区的基板。晶体生长的取向是由每个生长点的表面起伏控制的。然而，非常小的取向失配产生许多晶界，并且获得的晶粒尺寸最大在0.01mm左右。新结构为部分织构结构。织构部分的尺寸被确定为与我们以前的工作中的晶粒尺寸相同的数量级，我们可以在其上制备单晶。在剩余的区域上，半导体薄膜可以利用纹理部分上的图形外延生长的单颗粒作为种子横向生长。使用Si（100）晶片收集关于衬底制造的系统技术数据。对部分织构化的硅片进行氧化处理以防止外延生长，然后依次淀积W、Al和Ge。然后用红外光退火装置对Ge薄膜进行再结晶。在平面衬底上退火的Ge薄膜具有（111）织构，这是图形外延所必需的条件。然而，我们不能看到金字塔浮雕部分的图形外延现象。仔细表征生长的Ge膜暗示，退火温度是不够的，与Ar激光退火相比。发现需要更快速和更高温度的退火，退火温度超过600 ℃。少

项目成果

Takashi Kanata: ""Heteroepitaxial Growth of InGaAs on Graphoepitaxially Growth Germanium"" Applied Physics Letters. 56. 1752-1754 (1990)

Takashi Kanata：““InGaAs 在图形外延生长锗上的异质外延生长””应用物理快报。

Takashi Kanata: "Heteroepitaxial Growth of InGaAs on Graphoepitaxially Grown Germanium" Applied Physics Letters. 56. 1752-1754 (1990)

Takashi Kanata：“InGaAs 在图形外延生长的锗上异质外延生长”应用物理快报。

W.Ma: "A-Si//poly Si Four Terminal Stacked Solar Cell Having an Effiviency More Than 19%" 6th International Photovol.Science and Engineering Conf.(1992,Feb.,New Delhi). 463-467 (1992)

W.Ma:%20"A-Si//poly%20Si%20Four%20Terminal%20Stacked%20Solar%20Cell%20Having%20an%20Efficiency%20More%20Than%2019%"%206th%20International%20Photovol.Science%20and%

W. Ma: ""a-Si//poly Si Four Terminal Stacked Solar Cell Having an Efficiency More Than 19%"" 6th International Photovol. Sci. & Engineering Conf.New Delhi. 463-467 (1992)

W.%20Ma:%20""a-Si//poly%20Si%20Four%20Terminal%20Stacked%20Solar%20Cell%20Having%20an%20Efficiency%20More%20Than%2019%""%206th%20International%20Photovol.%

W.Ma: "aーSi//poly Si Four Terminal Stacked Solar Cell Having an Efficiency More Than 19%" 6th International Photovol.Science and Engineering Conf.(1992,Feb,New Delhi). 463-467 (1992)

W.Ma：“效率超过19%的a-Si//poly Si四端子堆叠太阳能电池”第六届国际光伏科学与工程会议（1992年2月，新德里）463-467（1992）。