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A Reaction Engineering Study on SiC Whisker Growth Control by High Temperature Masking of Substrate Surface

衬底表面高温掩蔽控制SiC晶须生长的反应工程研究

基本信息

批准号：
02650703
负责人：
HORIO Masayuki
金额：
$ 1.28万
依托单位：
Tokuo University of Agriculture and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02650703/
关键词：
SiC Whisker Thickness Linear growth Catalyst control Vertical reactor Continuous feeding Nucreation control

项目摘要

For the development of a low cost mass production process of SiC whiskers a new process concept was developed, where previous knowledge was summarized and systematically applied for the selective growth of thick whiskers. In this work fundamental data were taken for the development. In the present experiment constructed was a vertical tube reactor mounted with a continuous feeder, a continuous SiO gas radiator(1400ﾟC)and a SiO whisker growth section(1400-1600ﾟC)in which the substrates with implanted catalyst particles were placed. The composition of catalysts, gas flow rate, SiO generation rate and growth direction in relation with the gravity were investigated. Successful holding of a catalyst drop of 50 gm in diameter was established when SiO_2/C Composite particles and CH_4+Ar gas were fed in a rate of 0.0258/min and 400 ml/min, respectively. After 10 hours obtained was a linear whisker of 25mum thick and lOOmum long. However, for instance, most of the whiskers grown from 37 catalysts drops placed on a substrate had defects and kinks. To cope with such problems fundamental data were collected regarding operating factors. From SCM photographs of the products the following information was obtained :(1)By the presaturation of catalyst drops the induction period of whisker growth can be shortened and both evaporation loss of catalyst and secondary nucleation can be prevented ; (2)Increased SiO concentration and decreased gas flow rate improve the whisker growth rate ; and(3)The effect of gravity is not very significant. Although the very factor that controls the kink formation has not yet made clear, it was confirmed that thick and long SiC whiskers can be raised on the substrate SiO radiation system from the presaturated catalyst with the present continuous

为了开发一种低成本的大规模生产SiC晶须的工艺，开发了一种新的工艺概念，其中总结了以前的知识，并系统地应用于厚晶须的选择性生长。在这项工作中，为开发提供了基础数据。在本实验中，构建了一个垂直管式反应器，该反应器安装有连续进料器、连续SiO气体散热器（1400 ℃）和SiO晶须生长部分（1400-1600 ℃），其中放置了具有注入的催化剂颗粒的基底。考察了催化剂组成、气体流量、SiO生成速率和生长方向与重力的关系。当SiO_2/C复合颗粒和CH_4+Ar气体分别以0.0258/min和400 ml/min的速率进料时，成功地建立了直径为50 g的催化剂滴的保持。10小时后，获得25 μ m厚和100 μ m长的线性晶须。然而，例如，从放置在基底上的37个催化剂滴生长的晶须中的大多数具有缺陷和扭结。为了科普这些问题，收集了有关操作因素的基本数据。从产物的扫描电镜照片可以看出：（1）催化剂滴的预饱和可以缩短晶须生长的诱导期，防止催化剂的蒸发损失和二次成核;（2）增加SiO浓度和降低气体流量可以提高晶须生长速率;（3）重力的影响不是很明显。虽然控制扭结形成的因素还不清楚，但已经证实，在本发明的连续加热条件下，从预饱和催化剂中可以在衬底SiO辐射系统上产生粗而长的SiC晶须。