Chronic Toxicity of Gallium Arsenide and Indium Arsenide Intratracheally Instilled into Hamsters

对几种半导体材料--砷化镓(GaAs)、砷化铟(1NaS)和磷化铟(1NP)进行了气管内间歇性滴注，比较了它们的慢性毒性，包括致瘤性。这3种颗粒的几何平均直径在3.2~3.9um之间。给金黄地鼠气管内滴注含总剂量为3.75 mGAs(GaAs)、7.5 mGAs(LNAs)或7.5 mGAs(InP)的化合物，每周1次，共15周。作为对照，仓鼠只接受磷酸盐缓冲液的处理。我们已经观察了所有仓鼠大约两年。结果：1.砷化镓颗粒致大鼠肺损伤较重，表现为肺泡细胞增生、充血、出血，存活时间较对照组明显缩短。与对照组相比，InAs组小鼠体重增重率明显降低，但在整个实验期内，InAs组、InP组和对照组之间的存活率无明显差异。这些颗粒物还可引起严重的肺损伤，包括肺泡内蛋白沉着、肺泡细胞增生和肺气肿等病理性改变。与对照组相比，3组小鼠肺部及其他脏器均未见肿瘤。这些半导体材料的微粒在滴注部位滞留在肺部超过7个月，很可能会造成慢性肺损伤。

Comparative chronic toxicity, including tumorigenicity, of some semiconducting materials, or gallium arsenide (GaAs), lndium arsenide (1nAs) and indium phosphide (1np) were studied using in Syrian golden hamsters given intermittent intratracheal instillations. These 3 particulates characterized with a geometric mean diameter ranging from 3.2 um to 3.9 um. Hamsters were given each compounds containing a total dose of 3.75 mgAs (GaAs), 7.5 mgAs (lnAs) or 7.5 mgp (InP) by means of intratracheal instillations once a week for 15 weeks. As a control, hamsters were treated with only the vehicle, phosphate buffer solution. We had observed all hamsters for about 2 years.1. GaAs particles produced relatively severe lung damage including alveolar cell hyperplasia and congestion with hemorrhage, and the survival was shortened significantly compared with a control group.2. The InAs group exhibited obviously lower increasing ratio of body weight rather than the control group, but the survival rates were not differed among the InAs, InP and control groups through the experimintal period. These particles also produced severe lung damage including alveolar morbid change like proteinosis, alveolar cell hyperplasia and pulmonary emphysema.3. In these 3 groups, no more tumors were observed in the lungs and the other organs compared with the control.4. These particulates of semiconducting materials retained in the lungs at the site of instillations for more than 7 months, which was likely to cause chronic lung damage.