A Study on Multi-quantum Barriers Utilizing Electron-wave Interference in Semiconductors

利用半导体中电子波干涉的多量子势垒研究

• 批准号: 03402037
• 负责人: IGA Kenichi
• 金额: $ 11.07万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03402037/
• 关键词: Multi Quantum Barrier; Electronic Wave; Super Lattice; Semiconductor Layer; Semiconductor Laser; Hetero Barrier; 半導体レ-ザ

we use the double heterostructure (HD) in most of current semiconductor lasers for the purpose of confinement of both optical field and carriers as well. In order to prevent electrons from leaking over the hetero-barrier of a p-type cladding, it is known that more than 300 meV of built-in potential difference is usually required. But in some cases such as high power and high temperature operations, much higher barrier height is preferable. However, enough barrier height is not sometimes available due to the material limitation, e.g., in short wavelength GaAlInP based red-orange lasers and II-VI based blue-green ZnCdSSe or blue ZnMgSSe systems.We have to pay attention not only to the active engine of semiconductor lasers, but also to the cladding layer to achieve high performance devices. One of the ways to increase the effective barrier height is to dope high to p-cladding, and another is to use the quantum effect, i.e., multi-quantum barrier (MQB). The MQB is a semiconductor super-lattice which can reflect electrons by interference.The CQB is a semiconductor super-lattice which can reflect electrons by interference. In this paper we first introduce its principle and design concept and then review the recent progress of MQB-loaded semiconductor lasers and tunneling diodes. It has been pointed out that the operating temperature of visible GaAlInP/GaInP lasers, to red, can be raised up by 20 K. Also, some design and experimental studies for long wavelength lasers have been made. One of interesting features is a possibility of preventing the auger hot electron from leaking through the cladding.

目前大多数半导体激光器都采用双异质结构(HD)来实现对光场和载流子的限制。为了防止电子泄漏通过p型包层的异质势垒，人们知道通常需要300 meV以上的内置电势差。但在一些情况下，如高功率和高温操作，更高的势垒高度是可取的。然而，由于材料的限制，有时无法获得足够的势垒高度，例如在短波GaAlInP基红橙色激光器和II-VI基蓝绿锌镉硅或蓝锌镁硅系统中，我们不仅要关注半导体激光器的有源引擎，而且要关注实现高性能器件的包层。提高有效势垒高度的方法之一是在p包层中掺入高能杂质，另一种是利用量子效应，即多量子势垒(MQB)。MQB是通过干涉反射电子的半导体超晶格，CQB是通过干涉反射电子的半导体超晶格。本文首先介绍了MQB的原理和设计思想，然后对MQB加载半导体激光器和隧道二极管的最新进展进行了综述。指出可见光GaAlInP/GaInP激光器的工作温度可提高20K，并对长波长激光器进行了设计和实验研究。其中一个有趣的特点是有可能防止俄歇热电子通过包层泄漏。

项目成果

K Iga: "Multiquantum barrier-its design and application to semiconductor lasers" Proc.Conf.Laser and Electro-Optics. CMA1 (1992)

K Iga：“多量子势垒 - 其设计及其在半导体激光器中的应用”Proc.Conf.Laser and Electro-Optics。

K.Iga: "Multequantum barrier-its design and application to semiconductor Iasers" Proc.Conf.Laser & Electro-Optics. CMA1 (1992)

K.Iga：“多量子势垒 - 其设计及其在半导体激光中的应用”Proc.Conf.Laser

T.Ucheda,T.K.Ucheda,N.Yokouchi,T.Miyamoto,F.Koyama,K.Iga: "Photoluminescence characterization of Gax In_<1-x> As(0≦x≦0.32)Strained quantum wells grown on InP by chemical beam epitaxy" J.Crystal Growth. 120. 357-361 (1992)

T. Ucheda、T. K. Ucheda、N. Yokouchi、T. Miyamoto、F. Koyama、K. Iga：“Gax In_<1-x> As(0≤x≤0.32)通过化学方法在 InP 上生长的应变量子阱的光致发光表征“束外延”J.Crystal Growth 120. 357-361 (1992)

T.Takagi,F.Koyama,K.Iga: "Electronーwave reflection by multiーquatum barrier in nーGaAs/GaAs/nーGaAs tunneling diode" Applied Physics Letters. 59. 2877-2879 (1991)

T.Takagi、F.Koyama、K.Iga：“n-GaAs/GaAs/n-GaAs 隧道二极管中多量子势垒的电子波反射”《应用物理快报》59. 2877-2879 (1991)。

K.Iga: "Microoptics in International Trends in Optics(Chapter4)" Academic Press, 19 (1991)

K.Iga：《国际光学趋势中的微光学（第4章）》学术出版社，19（1991）