High-Quality Single Crystal Growth of Rare Earth Inter metallic compounds under Ultra-high vacuum

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We have constructed the zone-melting rf furnace under a ultra-high vacuum condition. An ingot of the rare earth compound is set on the boat-like Cu-hearth which is cooled by water. When this ingot passes through the rf working coil, it melts partially and grows as an single crystal.(1)The single crystals of CeRu_2Si_2 were first grown by the tri-arc Chochralski pulling method in an argon gas atmosphere and were annealed at 1500ﾟC under a high vacuum of 1x10^<-8>torr for five hours. The residual resistivity ratio of the obtained sample was 250, indicating good quality of the crystal. By using this high-quality sample we have observed a super-heavy carrier with the large cyclotron mass 120m_0.(2)We have also succeeded in growing a single crystal of LaRh_2 by a zone-melting method in the present furnace. The sweep-speed for zone-melting was 5mm/hr. An obtained single crystal ingot was about 5mm in diameter and 30mm in length. The Fermi surface of LaRh_2 was determined by the dHvA effect.