High-Quality Single Crystal Growth of Rare Earth Inter metallic compounds under Ultra-high vacuum
超高真空下稀土金属间化合物的高质量单晶生长
基本信息
- 批准号:03554006
- 负责人:
- 金额:$ 2.62万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Developmental Scientific Research (B)
- 财政年份:1991
- 资助国家:日本
- 起止时间:1991 至 1992
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have constructed the zone-melting rf furnace under a ultra-high vacuum condition. An ingot of the rare earth compound is set on the boat-like Cu-hearth which is cooled by water. When this ingot passes through the rf working coil, it melts partially and grows as an single crystal.(1)The single crystals of CeRu_2Si_2 were first grown by the tri-arc Chochralski pulling method in an argon gas atmosphere and were annealed at 1500゚C under a high vacuum of 1x10^<-8>torr for five hours. The residual resistivity ratio of the obtained sample was 250, indicating good quality of the crystal. By using this high-quality sample we have observed a super-heavy carrier with the large cyclotron mass 120m_0.(2)We have also succeeded in growing a single crystal of LaRh_2 by a zone-melting method in the present furnace. The sweep-speed for zone-melting was 5mm/hr. An obtained single crystal ingot was about 5mm in diameter and 30mm in length. The Fermi surface of LaRh_2 was determined by the dHvA effect.
我们在超高真空条件下建造了区熔式射频炉。将稀土化合物锭置于船形铜炉床上,用水冷却。当这种晶锭通过射频工作线圈时,它部分熔化并生长为单晶。(1)首先在氩气气氛中通过三弧Chochralski提拉法生长CeRu_2Si_2单晶,并在1500 ℃、1 × 10 ~(-3)Pa的高真空下退火<-8>5小时。所得样品的残余电阻率比为250,表明晶体质量良好。利用这个高质量的样品,我们观测到了一个具有120m_0大回旋质量的超重载流子。(2)We用区熔法生长了LaRh_2单晶。区熔的扫描速度为5 mm/hr,获得的单晶锭直径约为5 mm,长度约为30 mm。LaRh_2的费米面由dHvA效应决定。
项目成果
期刊论文数量(4)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
K. Satoh, S. W. Yun, I. Umehara, Y. Onuki, S. Uji, T. Shimizu, H. Aoki: "de Haas-van Alphen Effect in UGe_2" J. Phys. Soc. Jpn.61. 1827-1828 (1992)
K. Satoh、S. W. Yun、I. Umehara、Y. Onuki、S. Uji、T. Shimizu、H. Aoki:“UGe_2 中的德哈斯-范阿尔芬效应”J. Phys。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H. Aoki, S. Uji, A. K. Albessard and Y. Onuki: "dHVA Effect Study of Metamagnetic Transition in CeRu_2Si_2" J. Phys. Soc. Jpn.
H. Aoki、S. Uji、A. K. Albessard 和 Y. Onuki:“CeRu_2Si_2 中变磁转变的 dHVA 效应研究”J. Phys。
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- 影响因子:0
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- 通讯作者:
H, Aoki, S. Uji A. K. Albessard and Y. Onuki: "Observation of Heavy Electrons in CeRu_2Si_2 via the dHVA Effect" J. Phys. Soc. Jpn.61. 3457-3461 (1992)
H、Aoki、S. Uji、A. K. Albessard 和 Y. Onuki:“通过 dHVA 效应观察 CeRu_2Si_2 中的重电子”J. Phys。
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- 影响因子:0
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- 通讯作者:
H.AOKI et al.: "dHVA Effect Study of Metamagnetic Transition in CeRu_2Si_2" J.Phys.Soc.Jpn.
H.AOKI 等人:“CeRu_2Si_2 中变磁转变的 dHVA 效应研究”J.Phys.Soc.Jpn。
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ONUKI Yoshichika其他文献
ONUKI Yoshichika的其他文献
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{{ truncateString('ONUKI Yoshichika', 18)}}的其他基金
New Development of Heavy Electron Systeme including Transuranium Compound
超铀化合物等重电子体系新进展
- 批准号:
16204026 - 财政年份:2004
- 资助金额:
$ 2.62万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
SOLID STATE PROPERTY OF HIGHLY CORRELATED CONDUCTING SYSTEMS
高度相关传导系统的固态特性
- 批准号:
06244103 - 财政年份:1994
- 资助金额:
$ 2.62万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Fermi Surface Studies of Heavy Electron System by the de Haas-van Alphen Experiments
德哈斯-范阿尔芬实验对重电子系统的费米表面研究
- 批准号:
02640251 - 财政年份:1990
- 资助金额:
$ 2.62万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Fermi Surface Study of Rare Earth Compounds due to the de Haas-van Alphen effect
由德哈斯-范阿尔芬效应引起的稀土化合物的费米表面研究
- 批准号:
62460023 - 财政年份:1987
- 资助金额:
$ 2.62万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
相似海外基金
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SBIR 第一阶段:通过水平区域熔化生长高质量光学均匀 CdGeAs2 单晶
- 批准号:
9960017 - 财政年份:2000
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Standard Grant
Development of multicomponent bulk single crystal with uniform composition by the multicomponent zone-melting method
多组分区熔法研制成分均匀的多组分块状单晶
- 批准号:
11305001 - 财政年份:1999
- 资助金额:
$ 2.62万 - 项目类别:
Grant-in-Aid for Scientific Research (A).
Purification of Rare Earth Metals by Advanced Electron Beam Floating Zone Melting Method
先进电子束浮区熔炼法提纯稀土金属
- 批准号:
04650609 - 财政年份:1992
- 资助金额:
$ 2.62万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Normal Freezing and Zone Melting in Organic Systems
有机系统中的正常冻结和区域熔化
- 批准号:
64P2047 - 财政年份:1964
- 资助金额:
$ 2.62万 - 项目类别:
Zone Melting Techniques in Fractional Crystallization
分级结晶中的区域熔融技术
- 批准号:
5702372 - 财政年份:1957
- 资助金额:
$ 2.62万 - 项目类别: