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Design of phonon resonators based on semiconductor superlattices for the realization of phonon maser of THz-frequency range

基于半导体超晶格的声子谐振器设计，用于实现太赫兹频率范围的声子微波激射器

基本信息

批准号：
03650001
负责人：
TAMURA Shin-ichiro
金额：
$ 1.28万
依托单位：
(Faculty of Engineering) Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

In this project we first considered the ABA multi-suplerlattice structures consisting of two kinds of periodic superlattices A and B. Assuming GaAs and AlAs as the constituent layers of both A and B superlattices, we have shown by numerical calculations that the resonance transmission occurs in the THz-frequency range if the layer thicknesses are chosen in 10- to 100-A range. Specifically, we found that these resonance transmissions happen at frequencies within the frequency gaps of A superlattices, where the phonon transmission is prohibited in a pure A-superlattice system. In addition we studied the frequency dependence of the phonon transmission rate in these multi-superlattice systems.Next, in order to analyze the physical reason for the resonance of phonons in the proposed systems, we developed the analytical calculation of transmission rate based on the transfer-matrix method. As a result we succeeded to derive a general formula for the resonance condition.We also examined the transmission characteristics in a system where B superlattice is replaced with a bulk layer. The resonance condition in this system is derived as a function of various parameters of constituent materials. If A (superlattice) and B (single bulk layer) are stacked alternatively, a transmission peak splits into several isolated peaks. As the number of periods (consisting of A and B structures) is increased, those transmission peaks coalesce and make a broad transmission band. We could derive phonon dispersion relation for the latter case.The phonon transmission characteristics in various multisuperlattice structures we found have opened up new possibilities for designing phonon-optics devices such as phonon filters, phonon mirrors and phonon resonators.

在这个项目中，我们首先考虑了由两种周期性超晶格A和B组成的ABA多超晶格结构。假设GaAs和AlAs作为A和B超晶格的组成层，我们通过数值计算表明，如果层厚度选择在10到100A范围内，则在太赫兹频率范围内会发生共振传输。具体来说，我们发现这些共振传输发生在 A 超晶格频率间隙内的频率，其中声子传输在纯 A 超晶格系统中被禁止。此外，我们还研究了这些多超晶格系统中声子传输率的频率依赖性。接下来，为了分析所提出的系统中声子共振的物理原因，我们开发了基于传递矩阵方法的传输率解析计算。结果，我们成功地推导出了谐振条件的通用公式。我们还研究了用体层代替 B 超晶格的系统中的传输特性。该系统中的共振条件是根据组成材料的各种参数得出的。如果 A（超晶格）和 B（单体层）交替堆叠，则传输峰会分裂成多个孤立的峰。随着周期（由 A 和 B 结构组成）数量的增加，这些传输峰值合并并形成较宽的传输频带。我们可以推导出后一种情况的声子色散关系。我们发现的各种多重超晶格结构中的声子传输特性为设计声子光学器件（例如声子滤波器、声子镜和声子谐振器）开辟了新的可能性。