Wannier-Stark localization in semiconductor superlattices

半导体超晶格中的 Wannier-Stark 局域化

• 批准号: 05044109
• 负责人: FUJIWARA Kenzo
• 金额: $ 4.48万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05044109/
• 关键词: Semiconductor Superlattice; Miniband; Optical Spectra; Stark Effects; Electrooptic Effects; Photoconductivity; Han-Hove Singularity; Heterointerface

In this project we have investigated Wannier-Stark localization phenomena in semiconductor superlattices, aiming at clucidating the fundamental spectroscopic and tunneling transporl properties of the ultra-thin quantum heterostructures under high electric fields. In the artificially designed and fabricated superlattices as coupled-quantum-wells systems, varlous interesting quantum phenomena have emerged as a result of Stark effects on the quantized miniband states. By employing mainly optical methods such as photocurrent, photoluminescence, photoluminescence excitation and electroreflectance, key factors have been clarified which affect the spectroscopic structures and the tunneling transport properties of photogenerated carriers involving with optical absorption, recombination and tunneling processes. The following results are obtained from studies of this project : (1) fundamental band-edge absorption propeties of GaAs/AlAs superlattices with different miniband widths and their ralationship with the miniband dispersion, (2) correlation between the heterointerface fluctuations and the spectral and lateral photoluminescence properties, (3) dynamic transmission intensity oscillations due to the Starkladder resonances, (4) correlation between the radiative recombinations and tunneling and lateral transport properties of photogenaraied carriers, (5) quantum interference between the Stark ladder localized states associated with different subbands, (6) oscillator strengths of the excitonic Stark ladder transitions and their dependence on the miniband width, (7) optical properties of quasi-bound Stark ladder localized srates.

本项目研究了半导体超晶格中的Wannier-Stark局域化现象，旨在揭示高电场下超薄量子异质结构的基本光谱和隧穿输运性质。在人工设计和制备的超晶格耦合威尔斯量子阱系统中，由于量子化能带态的斯塔克效应，出现了各种有趣的量子现象。主要采用光电流、光致发光、光致发光激发和电反射等光学方法，阐明了影响光生载流子光谱结构和隧穿输运特性的关键因素，包括光吸收、复合和隧穿过程。该项目的研究取得了以下成果：（1）GaAs/AlAs超晶格的基本带边吸收特性及其与能带色散的关系，（2）异质界面涨落与光谱和横向光致发光特性的关系，（3）斯塔克阶梯共振引起的动态透射强度振荡，（4）光生载流子的辐射复合与隧穿和横向输运性质之间的相关性，（5）与不同子带有关的斯塔克阶梯定域态之间的量子干涉，（6）激子斯塔克阶梯跃迁的振子强度及其与微带宽度的关系，（7）准束缚Stark阶梯局域化态的光学性质。

项目成果

U.Jahn, K.Fujiwara, R.Hey, J.Kastrup, H.T.Grahn, J.Menninger: "Influence of Growth Related Thickness Fluctuations on the Spectral and Lateral Luminescence Intensity Distribution" in GaAs Quantum Wells Journal of Crystal Growth. (to be publlshed).

U.Jahn、K.Fujiwara、R.Hey、J.Kastrup、H.T.Grahn、J.Menninger：“与生长相关的厚度波动对光谱和横向发光强度分布的影响”，发表在 GaAs Quantum Wells Journal of Crystal Growth 中。

U.Jahn et al.: "Cathodoluminescence Studies of Exciton Localization in GaAs-AlGaAs Single Quantum Wells" Applied Physics Letters. (submitted).

U.Jahn 等人：“GaAs-AlGaAs 单量子阱中激子局域化的阴极发光研究”应用物理快报。

I.Tanaka et al.: "Critical Electric Field for Stark-ladder Formation in a GaAs/AlAs Superlattice" Physical Review B. 48. 2787-2790 (1993)

I.Tanaka 等人：“GaAs/AlAs 超晶格中斯塔克阶梯形成的临界电场”物理评论 B.48.2787-2790 (1993)

K.Fujiwara,K.Kawashima,M.Hosoda,K.Tominaga,T.Yamamoto,K.Ploog: "Transmission Intensity Oscillations in GaAs/AlAs Superlattices Induced by Photogenerated Charge Transport" Superlattices and Microstructures,. 15. 351-355 (1994)

K.Fujiwara、K.Kawashima、M.Hosoda、K.Tominaga、T.Yamamoto、K.Ploog：“光生电荷传输引起的 GaAs/AlAs 超晶格中的传输强度振荡”超晶格和微结构。

N.Linder,K.H.Sclmidl,W.Geisselbrecht,G.H.Dohler,H.T.Grahn,K.Ploog,H.Schncider,K.Fujiwara: "Excitonic Effects in Miniband and Wannier-Stark Absorption Spectra" Proceeding of 22nd International Conference on the Physics of Semiconductors. (in print). (1995)

N.Linder,K.H.Sclmidl,W.Geisselbrecht,G.H.Dohler,H.T.Grahn,K.Ploog,H.Schncider,K.Fujiwara：“微带和万尼尔-斯塔克吸收光谱中的激子效应”第 22 届国际物理学会议论文集