APPLICATION OF INTERMETALLIC COMPOUNDS TO FUNCTIONAL ELECTRONIC MATERIALS

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Refractory NiGe Ohmic contacts which had excellent thermal stability and smooth surface had been developed. To apply this contacts to the future very large scale integration (VLSI) GaAs devices, reduction of the contact resistance (R_C) of the NiGe contacts are mandatory. In the present paper, in order to obtain a guideline for the R_C reduction, the formation mechanism of the NiGe contacts was investigated. The NiGe contacts were found to have two different Ohmic contact formation mechanisms. These mechanisms suggested that facilitation of heavy doping at the GaAs surface and/or in the Ge layr was very effective to reduce the R_C values of the NiGe contacts.