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Plasma Enhaced Chemical Vapor Deposition of Hydrogen-free SiO_2 using tera-isocyanate-silane

四异氰酸酯硅烷等离子体增强化学气相沉积无氢SiO_2

基本信息

批准号：
06555091
负责人：
SUGIURA Osamu
金额：
$ 3.58万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555091/
关键词：
Plasma Enhaced CVD Tetra-isocyanate-silane SiO_2 TICS PECVD

项目摘要

Deposition of silicon dioxide by plasma-enhanced chemical vapor deposition (PECVD) technique using tetra-isocyanate-silane (Si (NCO) _4 : TICS) and oxygen for interlayr dielectric film application is proposed. This material system has an feature of no possibility of formation of H_2O molecules nor OH radicals during deposition. If deposited films were dense enough to prevent water penetration into the films, the films have a big advantage for solving the problem of poisoned via holes and threshold voltage variation because these were caused by H_2Oor OH radicals in SiO_2 interlayr. Film properties strongly depended on the deposition gas composition. The film which was deposited under an oxygen-rich condition and high temperature (300ﾟC) was "hydrogen-free SiO_2", which means that the films does not contaion water nor OH redicals. The film density, refractive index, resistivity, and dielectric constant were 2.3g/cm^3,1.46,5*10^<14>OMEGAcm, and 3.6, respectively. The etching rate by buffered HF was 330nm/min. The film quality degraded with decreasing deposition temperature, however, it can be improved by annealing at 300ﾟC after deposition. Interface trap density and fixed charge density were about 8*10^<10>cm^<-2>eV^<-1> and 2*10^<11>cm^<-2> respectively. Fluorine doping were also examined. Refractive index and dielectric constant were reduced by 8% and 3%, respectively.

本文提出了用等离子体增强化学气相沉积（PECVD）技术，以四异氰酸酯硅烷（Si（NCO）_4：TICS）和氧气为原料，制备二氧化硅层间介质膜。该材料体系具有在沉积过程中不可能形成H_2O分子和OH自由基的特点。如果沉积的薄膜足够致密以防止水渗透到薄膜中，则薄膜对于解决通孔中毒和阈值电压变化问题具有很大的优势，因为这些问题是由SiO_2夹层中的H_2O或OH自由基引起的。薄膜的性质强烈依赖于沉积气体的组成。在富氧条件下高温（300 ℃）沉积的薄膜为“无氢SiO_2”，即不含水和OH自由基。薄膜的密度、折射率、电阻率和介电常数分别为2.3g/cm ^3、1.46、5 *10^<14>Ω·cm和3.6。缓冲HF的刻蚀速率为330 nm/min，薄膜质量随沉积温度的降低而降低，但沉积后在300 ℃退火可以改善薄膜质量。界面陷阱密度和固定电荷密度分别为约8 × 10 - <10>4cm-<-2>3<-1>和2 × 10 - <11>4cm-3<-2>。还检查了氟掺杂。折射率和介电常数分别降低了8%和3%。