Development of High Conductive ITO Films by Controlling Their Orientation

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<111> oriented tin-doped indium oxide (ITO) films were deposited by rf magnetron sputtering on ZnO-coated glass substrates (ZnO/glass). The ZnO underlayrs were also deposited by rf magnetron sputtering and have been known to exhibit <001> preferred orientation in a wide range of deposition conditions. The X-ray diffraction profiles of the ITO films deposited on the ZnO/glass showed predominant <111> orientation without any differently oriented crystallites, whereas the ITO films deposited on bare glass substrates (ITO/glass) under the same deposition conditions showed <100>-preferred orientation with small areas of several other orientations. A mechanism of the heteroepitaxial growth of In2O3 (111) **ZnO (001) was explained by comparing the atomic configurations of oxygen between the oxygen mostly densepacked planes Of In2O3 and ZnO parallel to In2O3 (111) and ZnO (001) planes, respectively. Sn concentrations and lattice constants of the <111> oriented films (ITO/ZnO/glass) were found to be greater than those of <100> preferred oriented films (ITO/glass) in spite of the fact that the target and deposition conditions were the same, which could be associated with the electrical properties of the films.