Beyond the Ferroelectric Field Effect Transistors

冯·诺依曼范式是现代计算系统的基础，其基于中央处理器（CPU）和存储器之间的数据交换。CPU和内存之间的物理隔离将导致冯·诺依曼瓶颈-内存墙限制上下文智能应用程序的数据处理速度。 该项目旨在开发一种新型的铁电场效应晶体管，将铁电材料集成到半导体晶体管结构中，以在单个器件级合并逻辑和存储器功能。 这将解决存储器墙问题，同时为未来的逻辑存储器和数据中心计算范例提供低功率、高速度、高密度和长数据保留时间。

The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.