Tunnel injection of electron into diamond and its application to cold cathode

电子隧道注入金刚石及其在冷阴极中的应用

基本信息

  • 批准号:
    07455141
  • 负责人:
  • 金额:
    $ 4.93万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

Studies on tunnel injection of electrons into diamond and its application to cold cathode are carried out. The following results are obtained.[1] Electron injection characteristics into diamond are simulated for the metal/diamond contact in which it is assumed that donor impurites are heavily doped in the diamond and the Fermi level in the diamond is located near the conduction band. The effect of the donor level on the electron emission characteristic is examined. It is shown that electrons are efficiently injected into diamond with proper donor concentration and film thickness. A superior characteristic of diamond cold cathod is demonstrated in comparison with electron emission from the metal.[2] Phosphorus-doped diamond is synthesized on (100) -oriented Si substrates by chemical vapor deposition method. A temperature dependence of the electrical resistivity is measured and the activation energy is estimated to be 0.42-0.58eV.[3] Surface modification of diamond is carried out by oxygen, hydrogen and phosphine plasma treatments. Electron emission characterstics are examined for these samples. It is observed that the threshold electric field of the electron emission increases for oxygen-plasma-treated and annealed diamond samples.
本文研究了电子隧道注入金刚石及其在冷阴极中的应用。得到了以下结果。[1]模拟了金属/金刚石接触的电子注入金刚石的特性,其中假定金刚石中掺杂有大量施主杂质,并且金刚石中的费米能级位于导带附近。研究了施主能级对电子发射特性的影响。结果表明,在适当的施主浓度和薄膜厚度下,电子可以有效地注入金刚石。与金属的电子发射相比,金刚石冷阴极具有上级特性。[2]采用化学气相沉积法在(100)取向的Si衬底上合成了掺磷金刚石。测量了电阻率随温度的变化关系,并估算了激活能为0.42-0.58eV。[3]金刚石表面改性是通过氧、氢和磷化氢等离子体处理进行的。对这些样品的电子发射特性进行了测试。观察到氧等离子体处理和退火金刚石样品的电子发射阈值电场增加。

项目成果

期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Sugino Takashi: "Electron Emission Characteristics of Metal/Diamond Field Emitters" Diamond and Related Materials.
Sugino Takashi:“金属/金刚石场发射器的电子发射特性”金刚石和相关材料。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Takashi Sugino, Yukio Iwasaki, Seiji Kawasaki, Reiji Hattori and Junji Shirafuji: "Electron emission characteristics of metal/diamond field emitters" Diamond and Related Materials. (in press).
Takashi Sugino、Yukio Iwasaki、Seiji Kawasaki、Reiji Hattori 和 Junji Shirafuji:“金属/金刚石场发射器的电子发射特性”金刚石和相关材料。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Reiji Hattori: "Internal Field Emission at Metal/Diamond Contact and Performance of Thin Film Field Emitters -Computer Simulation-" Diamond and Related Materials.
Reiji Hattori:“金属/金刚石接触处的内部场发射和薄膜场发射器的性能 - 计算机模拟 -” 金刚石和相关材料。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Reiji Hattori, Takashi Sugino and Junji Shirafuji: "Internal field emission at metal/diamond contact and performance of thin film field emitters -computer simulation-" Diamond and Related Materials. (in press).
Reiji Hattori、Takashi Sugino 和 Junji Shirafuji:“金属/金刚石接触处的内部场发射和薄膜场发射器的性能 - 计算机模拟 -” 金刚石和相关材料。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Takashi Sugino: "Electron Emission Characteristics of Metal/Diamond Field Emitters" Diamond and Related Materials.
Takashi Sugino:“金属/金刚石场发射器的电子发射特性”金刚石和相关材料。
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  • 期刊:
  • 影响因子:
    0
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SHIRAFUJI Junji其他文献

SHIRAFUJI Junji的其他文献

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{{ truncateString('SHIRAFUJI Junji', 18)}}的其他基金

DIELECTRIC PROPERTIES IN ORIENTED THIN FILMS OF TUNGUSTEN-BRONZE-TYPE FERROELECTRIC Ba_6Ti_2Nb_8O_<30>
钨青铜型铁电体Ba_6Ti_2Nb_8O_<30>定向薄膜的介电性能
  • 批准号:
    12650326
  • 财政年份:
    2000
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Electrical Conduction Mechanism and Improvement of Odor Discrimination Ability in Chemisorption-Type Solid-State Sensors
化学吸附型固态传感器的导电机制及气味辨别能力的提高
  • 批准号:
    10650347
  • 财政年份:
    1998
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
DEVELOPMENT OF TUNNELING-CURRENT-CONTROLLED THIN FILM TRANSISTORS APPLYING SCHOTTKY CONTACTS
应用肖特基接触的隧道电流控制薄膜晶体管的开发
  • 批准号:
    08555086
  • 财政年份:
    1996
  • 资助金额:
    $ 4.93万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
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