Tunnel injection of electron into diamond and its application to cold cathode

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Studies on tunnel injection of electrons into diamond and its application to cold cathode are carried out. The following results are obtained.[1] Electron injection characteristics into diamond are simulated for the metal/diamond contact in which it is assumed that donor impurites are heavily doped in the diamond and the Fermi level in the diamond is located near the conduction band. The effect of the donor level on the electron emission characteristic is examined. It is shown that electrons are efficiently injected into diamond with proper donor concentration and film thickness. A superior characteristic of diamond cold cathod is demonstrated in comparison with electron emission from the metal.[2] Phosphorus-doped diamond is synthesized on (100) -oriented Si substrates by chemical vapor deposition method. A temperature dependence of the electrical resistivity is measured and the activation energy is estimated to be 0.42-0.58eV.[3] Surface modification of diamond is carried out by oxygen, hydrogen and phosphine plasma treatments. Electron emission characterstics are examined for these samples. It is observed that the threshold electric field of the electron emission increases for oxygen-plasma-treated and annealed diamond samples.