Tunnel injection of electron into diamond and its application to cold cathode

本文研究了电子隧道注入金刚石及其在冷阴极中的应用。获得了以下结果。[1]模拟了金属/金刚石接触的电子注入金刚石的特性，其中假定金刚石中掺杂有大量施主杂质，并且金刚石中的费米能级位于导带附近。研究了施主能级对电子发射特性的影响。结果表明，在适当的施主浓度和薄膜厚度下，电子可以有效地注入金刚石。与金属的电子发射相比，金刚石冷阴极具有上级特性。[2]采用化学气相沉积法在（100）取向的Si衬底上合成了掺磷金刚石。测量了电阻率随温度的变化关系，并估算了激活能为0.42-0.58eV。[3]金刚石表面改性是通过氧、氢和磷化氢等离子体处理进行的。对这些样品的电子发射特性进行了测试。观察到氧等离子体处理和退火金刚石样品的电子发射阈值电场增加。

Studies on tunnel injection of electrons into diamond and its application to cold cathode are carried out. The following results are obtained.[1] Electron injection characteristics into diamond are simulated for the metal/diamond contact in which it is assumed that donor impurites are heavily doped in the diamond and the Fermi level in the diamond is located near the conduction band. The effect of the donor level on the electron emission characteristic is examined. It is shown that electrons are efficiently injected into diamond with proper donor concentration and film thickness. A superior characteristic of diamond cold cathod is demonstrated in comparison with electron emission from the metal.[2] Phosphorus-doped diamond is synthesized on (100) -oriented Si substrates by chemical vapor deposition method. A temperature dependence of the electrical resistivity is measured and the activation energy is estimated to be 0.42-0.58eV.[3] Surface modification of diamond is carried out by oxygen, hydrogen and phosphine plasma treatments. Electron emission characterstics are examined for these samples. It is observed that the threshold electric field of the electron emission increases for oxygen-plasma-treated and annealed diamond samples.