Study on the fabrication of group III nitride based devices operated in the uncultivated region

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In this study, properties and fabrication of low dimensional structure based on group III nitride semiconductors and their application to novel devices which can operate in the uncultivated region has been investigated experimentally. The following results have been obtained.(1) Fabrication and characterization of two dimensional quantum wells and its application to group III nitride based laser diodes1.High-resolution X-ray diffraction and micro PL mapping study revealed that fluctuation of the thickness and the alloy composition in our GaInN/GaN multi quantum well is much less than 1 molecular layr and 1%, respectively.2.Intrinsic quantum confined Stark effect caused by piezoelectricity has been observed for the first time.3.Shortest wavelength semiconductor laser diode has been fabricated.4.Violet laser diode having FIB etched mirror has been fabricated.(2) Fabrication of wavelength selective UV detector based on AlGaN/GaN double heterosturcutreBand pass UV detector based on AlGaN/GaN heterostructure has been fabricated.(3) Microwave FET based on two dimensional electron gasHigh performance FET based on AlGaN/GaN HENT structure has been fabricated. The maximum oscillation frequency was as high as 77GHz.