OPTICAL AND ACOUSTICAL PROPERTIES OF INTERFACE IN DIRECT BONDING SEMICONDUCTORS

直接键合半导体界面的光学和声学特性

基本信息

  • 批准号:
    07640444
  • 负责人:
  • 金额:
    $ 1.54万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

Recently, various techniques to make direct bonding silicon are established and their application to actual devices are intended. The bonding mechanism is made clear and it was found that bonding strength reaches the fracture strength of silicon bulk. On the other hand, the contact problems between metal and semi-conductor are still important for basisc research as well as device application.[1] Dynamical properties of photoexcited carriers in direct bondong silicon are investigated by means of microwave and electrical resistance measurements.Diffusion coefficient of carriers in the material is found to be 30,000cm/s^2. In spite of large diffusion coefficient, electrons produced in a surface of one wafer of this material cannot reach the other wafer at 4.2K.In DC measurement, temperature dependence of resistivity of one wafer is influenced by photoexcitation on the othe face.[2] We report on an investigation of the transport properties of Ti/Si metalsemiconductor systems in the direction parallel and perpendicular to the interface. Anomalies caused by the shunting effect for resistivity measurements were analyzed in detail. It is found that the above-mentioned anomalies are closely related with the Schottky barrier height. The critical temperature at which a distinct indication of the shunting effect appears is around 250K.[3] Through the far-infrarerd magneto-optical absorption as well as the optically detected cyclotron resonance measurements, various problems for lattice-mismatch and crystal imperfection in epitaxially-grown ZnSe, GaAs and InGaAs and segregation problems of impurities in CdTe are made clear.
最近,建立了各种技术,使直接键合硅和它们的应用到实际设备的意图。研究了键合机理,发现键合强度达到了体硅的断裂强度。另一方面,金属与半导体之间的接触问题对于基础研究和器件应用仍然是重要的。[1]本文用微波和电阻测量方法研究了直接键合硅中光激发载流子的动力学性质,得到载流子在该材料中的扩散系数为30,000 cm/s^2。尽管扩散系数很大,但在4.2K时,在一片晶片表面产生的电子不能到达另一片晶片。在直流测量中,一片晶片电阻率的温度依赖性受另一片晶片表面光激发的影响。[2]本文报道了Ti/Si金属半导体系统在平行和垂直于界面方向上的输运性质的研究。详细分析了电阻率测量中分流效应引起的异常现象。发现上述异常与肖特基势垒高度密切相关。出现明显分流效应的临界温度约为250 K。[3]通过远红外磁光吸收和光探测回旋共振测量,明确了外延生长的ZnSe、GaAs和InGaAs中的晶格失配和晶体缺陷以及CdTe中杂质的分凝问题。

项目成果

期刊论文数量(15)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y. Harada et al.: "Far-infrared Study on Lattice Relaxation Phenomenon of Deep Defects in Cl-doped ZnSe" Proc. 23th Int. Conf. Phys. Semiconductors. 2973-2976 (1996)
Y. Harada 等:“Cl 掺杂 ZnSe 中深层缺陷晶格弛豫现象的远红外研究”Proc.
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K.Kobori et al.: "Far-infrared probing of nonmetal-metal transition for n-type GaAs in magnetic field" Proc.23th Int.Conf.Phys.Semiconductors. 149-152 (1996)
K.Kobori 等人:“磁场中 n 型 GaAs 的非金属-金属转变的远红外探测”Proc.23th Int.Conf.Phys.Semiconductors。
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    0
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B.Yang et al.: "Growth and Characterization of High Purity CdTe Single Crystals" J.Crystal Growth. (in press). (1997)
B.Yang 等人:“高纯度 CdTe 单晶的生长和表征”J.Crystal Growth。
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    0
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Y.Harada et al.: "Far-infrared absorption, cyclotron resonance and electron paramagnetic resonance measurements of SiC" Inst.Phys.Conf.Ser.No.142. 373-376 (1996)
Y.Harada 等人:“SiC 的远红外吸收、回旋加速器共振和电子顺磁共振测量”Inst.Phys.Conf.Ser.No.142。
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    0
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K.Kobori et al.: "Far-infrared Probing of nonmetal-metal transition for n-GaAs in magnetic fields" Proc.23th Int.Conf.Phys.Semiconductors. 149-152 (1996)
K.Kobori 等人:“磁场中 n-GaAs 的非金属-金属转变的远红外探测”Proc.23th Int.Conf.Phys.Semiconductors。
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OHYAMA Tyuzi其他文献

OHYAMA Tyuzi的其他文献

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{{ truncateString('OHYAMA Tyuzi', 18)}}的其他基金

Modulation Effects by Submillimeter Wave for Photoluminescence of Semiconductors with Specific Interfaces
亚毫米波对特定界面半导体光致发光的调制效应
  • 批准号:
    10640305
  • 财政年份:
    1998
  • 资助金额:
    $ 1.54万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Crystal Characterization by Far-infrared Magneto-optical Absorption
通过远红外磁光吸收表征晶体
  • 批准号:
    61460066
  • 财政年份:
    1986
  • 资助金额:
    $ 1.54万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
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