Modulation Effects by Submillimeter Wave for Photoluminescence of Semiconductors with Specific Interfaces

从1998年开始，1999年进行了微波和远红外激光光探测回旋共振（ODCR）系统的组装和设备的改进。此外，利用灵敏的小尺寸分光镜完成了多光度测量系统。这里我们报告了使用这些设备所获得的实验结果的概要。(1)对生长在衬底上的InGaAs进行了ODCR实验。实验结果表明，杂质的偏析和衬底与薄膜之间的界面缺陷形成了特殊的电子态。(2)基于GaAs中二维电子系统制备了量子点，并对量子点进行了ODCR实验。实验结果表明，量子点的界面势受到光激发的影响，量子点内的电子态发生了较大的调制。(3)通过对InSb和InGaAs样品的共振光电磁效应，明确了电子回旋共振产生的热流方向在衬底上的薄膜层与体样之间存在较大差异。实验表明，衬底在该系统中起着大量热积累的作用。(4)通过对ZnSe的ODCR实验，明确了电子、自由激子和束缚激子之间的能量交换机制强烈依赖于杂质浓度和双晶界的存在。(5)澄清了Mn加入到ZnS和CdS等化合物半导体中产生红光的来源，发现其发光概率强烈依赖于Mn原子周围原子的自旋轨道相互作用常数。

Assemblies of the system for the optically detected cyclotron resonance (ODCR) with microwave and far-infrared laser and improvement of the equipments were carried out over 1999 from 1998. In addition, the multi-photometry system using the sensitive small size spectroscope was completed. Here we report on the outline of the experimental results obtained with use of these equipments.(1) The ODCR experiment for the InGaAs which was grown on the substrate was carried out. From experimental results we found that the peculiar electronic states, which oniginate in the segregation of the impurity and the defects existing in the interface between the substrate and the thin film, are formed.(2) We have produced the quantum dot based on the two-dimensional electronic system in GaAs and carried out the ODCR experiment for the quantum dot. The experimental results have showed that the interface-potential of the quantum dot is affected by the photo-excitation and the electronic states confined in the dot are considerably modulated.(3) Through the resonance-photoelectromagnetic effect on the InSb and InGaAs samples, it was made clear that there exists large difference between the thin film layer on the substrate and the bulk sample for the direction of the heat flow produced by the electron cyclotron resonance. It was experimentally clarified that the substrate acts as a large heat accumulation on this system.(4) From the ODCR experiment on ZnSe, it was made clear that the mechanism of the energy exchange among electrons, free excitons and bound excitons strongly depends on the impurity concentration and the existence of the twin crystal boundary.(5) The origin of the red luminescence from Mn added to the compound semiconductors as ZnS and CdS was clarified, and it was found that the light emission probability strongly depends on the spin-orbit interaction constant of the nearby atom which surrounds Mn atom.