Modulation Effects by Submillimeter Wave for Photoluminescence of Semiconductors with Specific Interfaces

从1998年至1999年，对微波和远红外激光光学探测回旋共振(ODCR)系统进行了组装和设备改进。此外，还完成了利用灵敏的小尺寸分光镜的多路光度测量系统。在这里，我们报告了利用这些设备所获得的实验结果。(1)对生长在衬底上的InGaAs进行了ODCR实验。从实验结果中我们发现，在衬底和薄膜的界面上形成了导致杂质偏析和缺陷的特殊电子态。(2)制作了基于GaAs二维电子系统的量子点，并对该量子点进行了ODCR实验。实验结果表明，光激发对量子点的界面电势有很大的影响，量子点中的电子态受到了很大的调制。(3)通过对InSb和InGaAs样品的共振-光电磁效应研究，发现衬底上的薄膜与块体样品在电子回旋共振产生的热流方向上存在很大的差异。(4)通过对ZnSe的ODCR实验表明，电子、自由激子和束缚激子之间的能量交换机制强烈地依赖于杂质浓度和孪晶晶界的存在。(5)阐明了以硫化锌和硫化镉为代表的化合物半导体中添加锰的红光发光的起源，发现发光几率强烈地依赖于围绕锰原子的附近原子的自旋-轨道相互作用常数。

Assemblies of the system for the optically detected cyclotron resonance (ODCR) with microwave and far-infrared laser and improvement of the equipments were carried out over 1999 from 1998. In addition, the multi-photometry system using the sensitive small size spectroscope was completed. Here we report on the outline of the experimental results obtained with use of these equipments.(1) The ODCR experiment for the InGaAs which was grown on the substrate was carried out. From experimental results we found that the peculiar electronic states, which oniginate in the segregation of the impurity and the defects existing in the interface between the substrate and the thin film, are formed.(2) We have produced the quantum dot based on the two-dimensional electronic system in GaAs and carried out the ODCR experiment for the quantum dot. The experimental results have showed that the interface-potential of the quantum dot is affected by the photo-excitation and the electronic states confined in the dot are considerably modulated.(3) Through the resonance-photoelectromagnetic effect on the InSb and InGaAs samples, it was made clear that there exists large difference between the thin film layer on the substrate and the bulk sample for the direction of the heat flow produced by the electron cyclotron resonance. It was experimentally clarified that the substrate acts as a large heat accumulation on this system.(4) From the ODCR experiment on ZnSe, it was made clear that the mechanism of the energy exchange among electrons, free excitons and bound excitons strongly depends on the impurity concentration and the existence of the twin crystal boundary.(5) The origin of the red luminescence from Mn added to the compound semiconductors as ZnS and CdS was clarified, and it was found that the light emission probability strongly depends on the spin-orbit interaction constant of the nearby atom which surrounds Mn atom.