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Study of visible luminescence features of porous Si

多孔硅可见光发光特性研究

基本信息

批准号：
07650806
负责人：
WADAYAMA Toshimasa
金额：
$ 1.41万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650806/
关键词：
porous Si electrochemical anodization visible photoluminescence Raman spectra siloxene quantum confinement light emitting Si crystalline

项目摘要

Canham first reported a room-temperature visible photoluminescence (PL) from the porous silicon (PS) and since then a large number of investigations have been carried out on the mechanisms responsible for the visible PL as well as on its application to optoelectronic devices. The visible PL from PS samples has been explained, to date, on the basis of quantum confinement effects in Si nanostructures formed PS layrs or the formation of wide-gap surface chemical species such as siloxene. Further experimental as well as theoretical work should be needed for more precise discussion of the strong visible PL mechanisms. Most of the PL spectra reported were measured in air after the treatments and dynamic changes in the PL spectra of PS in the process of various treatments are yet to be elucidated. In situ PL analysis of the samples under the various treatments conditions would, thus, provide us an important clue to understand the mechanisms of the visible PL of PS.In the present study, visibl … More e luminescence and Raman spectral changes of porous Si during several treatments were recorded in-situ. An exposure to F_2 under Ar^+ laser light (488 nm) irradiation at 373 K leads to change in photoluminescence (PL) band intensity as well as its peak position. At early stage of the exposure, the PL band at 750 nm peak decreased in intensity and a new band emerged at 600 nm. After 30 min from the beginning of the exposure dominates the spectrum while the band at 750 nm almost disappeared. When the sample after the F_2 treatment was exposed to H_2O vapor, the PL intensity around 750 nm increased. The average particle size of the porous Si during the F_2 exposure evaluated from Raman measurements was remained unchanged during the treatments. Further, PL band intensity change of the sample during electrochemical treatments was recorded. The results showed that the PL intensity depended strongly upon the electrolytes.These results suggest that surface chemical structure of the sample species strongly influence the observed PL spectral features. Less

Canham首先报道了多孔硅（PS）的室温可见光致发光（PL），此后，人们对可见光致发光的机理及其在光电器件中的应用进行了大量的研究。到目前为止，PS样品的可见光致发光已经被解释为基于PS层形成的Si纳米结构中的量子限制效应或宽禁带表面化学物种（如石墨烯）的形成。进一步的实验以及理论工作，应该需要更精确的讨论强可见光致发光机制。大多数的PL光谱报告后，在空气中测量的处理和动态变化的PL光谱的PS在各种处理的过程中还有待阐明。因此，对不同处理条件下样品的原位光致发光分析将为我们理解PS可见光致发光的机理提供重要线索。 ...更多信息原位记录了多孔硅在不同处理过程中的电子发光和拉曼光谱的变化。在Ar^+激光（488 nm）的作用下，373 K的F_2辐照导致样品的光致发光（PL）谱带强度和峰位发生变化。在曝光初期，750 nm处的荧光峰强度减弱，在600 nm处出现一个新的荧光峰。从曝光开始30分钟后，光谱占主导地位，而750 nm处的谱带几乎消失。经F_2处理后的样品暴露于H_2O蒸气中，750 nm附近的光致发光强度增强。由拉曼测量评估的F_2暴露期间多孔Si的平均粒径在处理期间保持不变。此外，记录了电化学处理过程中样品的PL谱带强度变化。结果表明，样品的发光强度对电解质有很强的依赖性，表明样品表面的化学结构对所观察到的发光光谱特征有很大的影响。少