Mineral Interface Doping (MID)

为了跟上全球能源需求的步伐，太阳能技术随着不断努力减少碳的使用以及增加可再生资源和绿色能源的使用而发展。该领域的研究重点是利用新技术最大限度地提高太阳能电池的效率，以及开发高效、具有成本效益的制造材料。近年来对实验电子设备的需求不断增加，需要复杂的技术，而这些技术并不总是环保的。在这里提出的研究中，我们研究了一种不去除天然氧化物的新方法，这意味着避免使用任何有毒物质，如POCl3或HF。在提出的研究中，我们将利用原位红外光谱来研究一种完全不同的接枝方法，基于最近的一项发现，可以直接将掺杂剂附着在硅片上。这个过程被称为聚集和生长拴系（T-BAG），它最初是为磷酸自组装单层（SAM）的沉积而开发的。最近的研究表明，该制备技术对层状结构矿物具有完全的可重复性。这种制备适合于磷酸盐矿物颗粒薄膜的沉积。电子设备已不可逆转地融入我们的生活，但其有限的使用寿命和往往缺乏远见的处置需要可持续的概念，以充分实现绿色电子的未来。研究必须将重点转移到替代不可降解和难以回收的材料上，以允许生物降解或易于回收的电子设备。在这个提议中，我们研究了一种新的硅片掺杂工艺，不使用任何剧毒或腐蚀性的化学物质。

Solar technology has evolved as continuous efforts to reduce the use of carbon as well as the increasing use of renewable resources and green energy, in order to keep pace with global energy demand. Research in this area focuses on maximizing the efficiency of solar cells using new technologies, as well as the development of efficient, cost-effective manufacturing materials. The increased demand of electronic devices experimented in recent years requires sophisticated technologies that are not always eco-friendly. In the research proposed here, we investigate a new methodology to dope without removing the native oxide, which means avoiding the use of any toxic substances such as POCl3 or HF. In the proposed research, we will make use of in situ infrared spectroscopy to investigate a fundamentally different grafting method, based on a recent discovery that makes possible to directly attach dopants on a silicon wafer. The process is called Tethering by aggregation and growth (T-BAG), which was initially developed for the deposition of self-assembled monolayers (SAM’s) of phosphonic acids. Recent investigations showed that the preparation technique is perfectly reproducible for the use of lamellar structured minerals. Such preparation is adapted for the deposition of thin films of phosphate mineral particles. Electronic devices are irrevocably integrated into our lives, yet their limited lifetime and often improvident disposal demands sustainable concepts to fully achieve a green electronic future. Research must shift its focus on substituting nondegradable and difficult-to-recycle materials, to allow either biodegradation or facile recycling of electronic devices. In this proposal we investigate a new doping process of silicon wafers without making use of any highly toxic or corrosive chemical substances.