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Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures

Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures
半导体低维结构制造新型控制技术研究
批准号:
08455013
负责人:
FUJITA Shizuo
金额:
$4.42万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

项目摘要

项目成果

FUJITA Shizuo的其他基金

相关文献

中文摘要
翻译
本研究旨在开发一种利用光辅助工艺的选择性生长特性控制半导体低维结构制造的新技术,这是我们小组已经探索过的。结果总结如下:1.利用质谱技术研究了光照射下的生长过程,发现烷基锌的热分解、吸附和光催化反应是生长过程的主要过程。2.烷基锌和烷基镉在光照射下的分解特性不同,并且该结果允许通过打开和关闭照射成功地控制ZnCdSe和ZnCdS多层结构的生长。X射线衍射、光致发光和激子相关光学性质证实了它们的结构。3.研究了在不同衬底上生长的选择性,结果表明生长受热能和光子能的共同控制。在较低的温度下,如果辐照能量低于禁带宽度,则不发生生长,而在较高的温度下,由于热能可以形成薄层,引起连续的光催化反应,则可以发生生长.通过选择适当的衬底温度和辐照能量,证实了在ZnSe上而不在ZnS上生长的选择性生长.这一结果表明,具有面内图案的低维结构实际上可以
英文摘要
This research was carried out aimed at developing a new technology for controlling fabrication of semiconductor low dimensional structures utilizing selective growth characteristics with photoassisted processes, which had been explored by our group. The results are summarized as follows ;1.Growth processes with photoirradiation were investigated by means of mass spectroscopy during the growth, and we found that the growth proceeded with thermal decomposition of alkylzinc, its adsorption to the growth surface, and photocatalytic reaction.2.The decomposition characteristics of alkylzinc and alkylcadmium were found to be different under photoirradiation, and this result allowed successful growth control of ZnCdSe and ZnCdS multilayr structures with turning on and off the irradiation. The well-defined structure of them was confirmed by x-ray diffraction, photoluminescence, and exciton-related optical properties.3.The selectivity of growth on different underlying layr was investigated, and the result suggested that the growth was dominated both by thermal energy and photon energy. At a lower temperature the growth did not occur if the irradiation energy was lower than the bandgap, but it did at a higher temperaturu because a thin layr could be formed by the thermal energy which can cause the successive photocatalytic reactions.The selective growth that the growth occured on ZnSe but not on ZnS was demonstrated with appropriate choose of the substrate temperature and the irradiation energy. This result showed that thelow dimentional structures with in-plane patterns could actually
期刊论文(14)
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会议论文
藤田 静雄: "Effects of photoirradiation energy and of underlying layers on ZnSe grown by photoassisted MOVPE" Journal of Crystal Growth. (印刷中).
Shizuo Fujita:“光照射能量和底层对光辅助 MOVPE 生长的 ZnSe 的影响”《晶体生长杂志》(正在出版)。
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通讯作者:
FUJITA Shizuo, et al.: "Growth of p-type Zn(S)Se layrs by MOVPE" Journal of Crystal Growth. (in press).
FUJITA Shizuo 等人:“通过 MOVPE 生长 p 型 Zn(S)Se 层”《晶体生长杂志》。
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藤田静雄: "Defect states in p-ZnSe grown by MOVPE" Mat.Res.Soc.Proceedings. (発表予定).
Shizuo Fujita:“MOVPE 生长的 p-ZnSe 中的缺陷状态”Mat.Res.Soc.Proceedings(待提交)。
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共 11 条
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    • 批准号:
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      $8.45万
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    Photodynamics of Organic Thin Film Multilayer Struvtures with Optical Functions
    • 批准号:
      11450013
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
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    • 负责人:
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