Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures
Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures
批准号:
08455013
负责人:
FUJITA Shizuo
金额:
$4.42万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997
中文摘要
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英文摘要
This research was carried out aimed at developing a new technology for controlling fabrication of semiconductor low dimensional structures utilizing selective growth characteristics with photoassisted processes, which had been explored by our group. The results are summarized as follows ;1.Growth processes with photoirradiation were investigated by means of mass spectroscopy during the growth, and we found that the growth proceeded with thermal decomposition of alkylzinc, its adsorption to the growth surface, and photocatalytic reaction.2.The decomposition characteristics of alkylzinc and alkylcadmium were found to be different under photoirradiation, and this result allowed successful growth control of ZnCdSe and ZnCdS multilayr structures with turning on and off the irradiation. The well-defined structure of them was confirmed by x-ray diffraction, photoluminescence, and exciton-related optical properties.3.The selectivity of growth on different underlying layr was investigated, and the result suggested that the growth was dominated both by thermal energy and photon energy. At a lower temperature the growth did not occur if the irradiation energy was lower than the bandgap, but it did at a higher temperaturu because a thin layr could be formed by the thermal energy which can cause the successive photocatalytic reactions.The selective growth that the growth occured on ZnSe but not on ZnS was demonstrated with appropriate choose of the substrate temperature and the irradiation energy. This result showed that thelow dimentional structures with in-plane patterns could actually
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藤田 静雄: "Effects of photoirradiation energy and of underlying layers on ZnSe grown by photoassisted MOVPE" Journal of Crystal Growth. (印刷中).
Shizuo Fujita:“光照射能量和底层对光辅助 MOVPE 生长的 ZnSe 的影响”《晶体生长杂志》(正在出版)。
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通讯作者:
FUJITA Shizuo, et al.: "Growth of p-type Zn(S)Se layrs by MOVPE" Journal of Crystal Growth. (in press).
FUJITA Shizuo 等人:“通过 MOVPE 生长 p 型 Zn(S)Se 层”《晶体生长杂志》。
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FUJITA Shizuo, et al.: Semiconductor and Semimetals44. Academic Press, 338 (1997)
FUJITA Shizuo 等人:半导体和半金属44。
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通讯作者:
藤田静雄: "Defect states in p-ZnSe grown by MOVPE" Mat.Res.Soc.Proceedings. (発表予定).
Shizuo Fujita:“MOVPE 生长的 p-ZnSe 中的缺陷状态”Mat.Res.Soc.Proceedings(待提交)。
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通讯作者:
藤田 静雄: "Semiconductor and Semimetals 44" Academic Press(分担執筆), 338 (1997)
藤田静雄:《半导体与半金属 44》学术出版社(合着),338(1997)
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共 11 条
Evolution of optical-electronic-magnetic multifunctions with novel oxide semiconductors
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批准号:22360007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.4万
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财政年份:2010
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负责人:FUJITA Shizuo
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依托单位:
Study on gallium oxide-based deep ultraviolet light emitters
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批准号:19360007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.48万
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财政年份:2007
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负责人:FUJITA Shizuo
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依托单位:
Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines
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批准号:15360009
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.45万
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财政年份:2003
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负责人:FUJITA Shizuo
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依托单位:
Photodynamics of Organic Thin Film Multilayer Struvtures with Optical Functions
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批准号:11450013
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$5.89万
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财政年份:1999
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负责人:FUJITA Shizuo
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依托单位:
The research on the development of processed food using waxy wheat and their food- culture development
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批准号:10680166
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.79万
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财政年份:1998
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负责人:FUJITA Shizuo
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依托单位: