Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines
Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines
批准号:
15360009
负责人:
FUJITA Shizuo
金额:
$8.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004
中文摘要
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英文摘要
The research has aimed at the development of new artificial control technology for size, shape and position of low dimensional nanostructures, with which novel device applications are expected. The results are summarized as follows ;1.The basic idea, that is, substrate nanopatterning with focused ion beam(FIB) and successive growth of semiconductors, is proposed for the purpose.2.Formation of nanolines on substrates by FIB resulted in selective growth of ZnO nanodots along the line. At the certain growth conditions, the periodical arrangement of the nanodots was performed.3.A novel technique to form nanoholes on the SiO2 surface over the wide area with the separation smaller than 1 μm has been developed. The growth of ZnO on the substrate resulted in one nanodot on one nanohole, that is, the complete control of position of a nanodot was achieved. The almost complete control was domonstrated even the separation between the nanodots was smaller than 200 nm.4.The mechanism of the selective formation of nanodots on nanohole was attributed to the interation between Ga implanted by the FIB process and precursors for growing ZnO. Liquids of Ga at the growth temperature may react with the precursors and form a nucleus center in the nanohole.5.Cathodoluminescence from single ZnO nanodot was confiremed and quantum effects in nanodots were evidenced, suggesting that the nanodots are of high optical quality capable of being applied to practical devices.6.Formation of ZnO nanodots along the step edge of sapphire substrate was observed. This was followed by the formation of nanolines. These phenomena have not been often observed near the atmospheric pressure under which the MOCVD growth has been done.In conclusion, artificial control of nanostructures has been successfully carried out by nanopatterning the substrate surface by FIB or by forming clear step edge on the surface. The results are highlighted as a novel technology to allow various nanostructure devices.
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Fabrication and characterization of self- and artificially- assembled ZnO nanodots
自组装和人工组装 ZnO 纳米点的制备和表征
DOI:
--
发表时间:
2004
期刊:
Journal of the Korean Physical Society 45
影响因子:
--
作者:
[三浦篤志, 浦岡行治, 冬木隆, 山下一郎, 金 湘祐]
通讯作者:
金 湘祐
Multidimensional ZnO nanodot arrays by self-ordering on functionalised substrates
在功能化基底上通过自排序实现多维 ZnO 纳米点阵列
DOI:
--
发表时间:
2004
期刊:
Physica Status Solidi (c)(Iss.4) Vol.1
影响因子:
--
作者:
[T.Yamashita, S.Hasegawa, S.Nishida, M.Ishimaru, Y.Hirotsu, H.Asahi, Sang-Woo Kim]
通讯作者:
Sang-Woo Kim
Self-tailored one-dimensional ZnO nanodot arrays formed by metalorganic chemical vapor deposition
金属有机化学气相沉积自定制一维ZnO纳米点阵列
DOI:
--
发表时间:
2003
期刊:
Japanese Journal of Applied Physics 42・6A
影响因子:
--
作者:
[T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino, 金 湘祐]
通讯作者:
金 湘祐
金 湘祐: "Selective formation of ZnO nanodots on nanopatterned substrates by metalorganic chemical vapor deposition"Applied Physics Letters. 83(17). 3593-3595 (2003)
Xiangyu Kim:“通过金属有机化学气相沉积在纳米图案基底上选择性形成 ZnO 纳米点”,《应用物理快报》83(17) 3593-3595 (2003)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
DOI:
10.1063/1.1883320
发表时间:
2005-04-11
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Kim, SW, Fujita, S, Fujita, S]
通讯作者:
Fujita, S
共 10 条
Evolution of optical-electronic-magnetic multifunctions with novel oxide semiconductors
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批准号:22360007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.4万
-
财政年份:2010
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负责人:FUJITA Shizuo
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依托单位:
Study on gallium oxide-based deep ultraviolet light emitters
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批准号:19360007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.48万
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财政年份:2007
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负责人:FUJITA Shizuo
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依托单位:
Photodynamics of Organic Thin Film Multilayer Struvtures with Optical Functions
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批准号:11450013
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$5.89万
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财政年份:1999
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负责人:FUJITA Shizuo
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依托单位:
The research on the development of processed food using waxy wheat and their food- culture development
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批准号:10680166
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.79万
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财政年份:1998
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负责人:FUJITA Shizuo
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依托单位:
Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures
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批准号:08455013
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.42万
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财政年份:1996
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负责人:FUJITA Shizuo
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依托单位:
海外基金