A new approach to the device processing by means of supersonic molecular and radical beams

本项目的目的是研究Si（100）表面上（1）：Cl_2解离反应和（2）：H诱导的H夺取反应的动力学。在本计画中，我们发现超音波Cl_2与氢原子束对于矽元件的加工，如表面的蚀刻与清洗，都是非常有用且有潜力的。我们得到了以下结果：（1）Cl_2在Si（100）表面的解离反应，测量了Cl_2在Si（100）表面的初始粘附几率随表面温度和入射能量的变化。两个粘附通道，一个是前体介导的过程，另一个是直接粘附过程。前者主要发生在0.05eV以下的低入射能量下，后者主要发生在0.1eV以上的高入射能量下。(2):Si（100）表面化学吸附H原子的抽氢反应生成HD分子的角分布为了研究入射D原子对化学吸附H原子的抽氢反应动力学，测量了HD分子的角分布。发现在镜面反射方向相对于表面法线的20 °附近出现分布峰值。这与氢的缔合热脱附相比，氢的缔合热脱附显示出朝向表面法线的角分布峰。因此，我们得出结论，H-诱导的abstarrhea反应发生以下的Eley-Rideal机制。

Our aim of the project is to investigate the dynamics of the reactions of (1) : Cl_2 dissociatve reaction and (2) : H-induced H abstraction reaction on the Si (100) surface. In this project, we found that the supersonic Cl_2 and atomic hydrogen beams are both very useful and potentially high for the Si device processing such as etching and cleaning of surfaces. We obtained following results ;(1) : Cl_2 dissociatve reaction on the Si (100).Initial sticking probabilities of Cl_2 on the Si (100) surface were measured as a function of surface temperature and incident energy. Two sticking channels were clalified ; one is the precursor mediated process and the other is the direct stickiig process. The former process is dominat it low incident energy below 0.05eV,and the latter is at high incident energy above 0.1eV.The data were analyzed with a kinetic model, and the relevant reaction potential parameters were determined.(2) : Angular distribution of HD produced in the H abstraction reaction of chemisorbed H on Si (100)In order to investigate the abstraction reaction dyanamics of chemisorbed H by incident-D atoms, the angular distribution of products HD moleculeres were measured. It was found that the distribution peak appeared around 20ﾟ in the specular dirction with respect to the surafce normal. This was compared with the associative thermal desorption of hydrogen which showed the angualr distribution peak towards the surface normal. Therefore, we concluded that the H-induced abstarction reaction takes place following the Eley-Rideal mechanism.