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Reaction Dynamics of Atomic Hydrogen with H-terminated Si Surfaces

氢原子与 H 封端硅表面的反应动力学

基本信息

批准号：
14350022
负责人：
NAMIKI Akira
金额：
$ 6.98万
依托单位：
Kyusyu Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

项目摘要

Our Aim of the research is to investigate the dynamics of H-induced abstraction of surface D adatoms on the Si(100) surfaces. There are two kinds of abtraction paths : one is direct abstraction (ABS) and the other is adsorption-induced-desorption(AID) of surfaced adatams. From experiments w e clarified following things :(1)Angular distribution of molecules desorbed along ABS and AID reaction pathways.The angular distributions of desorption yields show a maximum at the normal direction for both paths. Results were well explained by the simulation employing LEPS potential. This has been prepared to be submitted to a journal as a paper.(2)D_2 desorptions along the AID channel were studied by means of a chopped H-beam technique. The width of the chopped-H beam was 1.5 s and duration was 3 s. The HD desorption along the ABS channel showed a quick response to the incident H pulse, suggesting the abstraction reaction is direct. On the other hand, D_2 desorption along the AID pathway showed no … More t only a similar quick path but also a delayed path. The fast desorption channel was understood as due to molecular emissions that occur when locally formed 1x1 dihydride phases collap into the original 3x1 dihydride phases. A paper was published (J.Chem.Phys.121,3221(2004))(3)D_2 desorptions along the AID channel were studied by employing further shortned H-beam. The width of the chopped-H beam was 0.5 s and duration was 10 s. The HD desorption along the ABS channel showed a quick response to the incident H pulse, suggesting abstraction reaction is direct. On the other hand, D_2 desorption along the AID pathway showed multi components chracterized with 0.05,0.8 and 30 s lifetimes. The fastest desorption channel was understood as due to molecular emissions that occur when locally formed 1x1 dihydride phases collap into the original 3x1 dihydride phases. The second fastest path was understood as due to molecular emission when 3x1 dihydride phases are formed during H irradiation. The third component was attributed to the molecular emission channel when the excess 3x1 dihydride phases are destroyed. Apaper has been submitted to Surf face Science. Less

我们研究的目的是研究氢诱导的表面D原子在Si(100)表面上的吸附动力学。提取途径有两种：一种是直接提取(ABS)，另一种是表面吸附诱导解吸(AID)。实验结果表明：(1)沿ABS和AID反应路径脱附分子的角分布，两条反应路径的脱附产额角分布均在法线方向出现极大值。用LEPS电势进行的模拟很好地解释了结果。这已经准备好作为论文提交到期刊上。(2)用斩波H型束技术研究了沿AID通道的D_2脱附。被斩波的H束的宽度为1.5 S，持续时间为3 S。HD沿ABS通道的脱附对入射的H脉冲有较快的响应，表明抽提反应是直接的。另一方面，D_2沿艾滋病途径的解吸没有显示…更多的不仅是类似的快速路径，而且还有延迟路径。快速脱附通道被认为是由于当局部形成的1x1二氢物相塌陷成原始的3x1二氢物相时发生的分子发射。发表了一篇论文(J.Chem.Phys.121,3221(2004))(3)利用更短的H-BEAM研究了沿AID通道的D2解吸。被斩波的H束的宽度为0.5 S，持续时间为10 S。HD沿ABS通道的脱附对入射的H脉冲有快速的响应，表明抽提反应是直接的。另一方面，D2沿AID途径的解吸表现出多组分的特征，其S寿命分别为0.05、0.8和30。最快的脱附通道被认为是由于当局部形成的1x1二氢物相塌陷成原始的3x1二氢物相时发生的分子发射。第二个最快的路径被理解为在H辐照过程中形成3x1二氢化物相时的分子发射。当过剩的3x1二氢化合物相被破坏时，第三组分被归因于分子发射通道。一篇论文已经提交给Surf Face Science。较少