Development of High-Speed Dry Coating of Cu-Wiring Using Clean Metal-Arc Plasma

本计画之目的在于开发以阴极真空电弧沉积法取代目前湿式电镀法之油炸法，以形成大规模积体电路元件端部之铜配线薄膜之主要技术。阴极真空电弧沉积是以固体金属作为真空电弧的阴极，通过阴极点直接蒸发金属，利用金属蒸气等离子体中的离子在无气体的条件下进行镀膜。然而，阴极材料的微米级颗粒，即所谓的液滴，也通过其爆炸现象从阴极斑点发射出来。液滴使膜单层减少，并且可能阻塞布线沟槽。液滴应该从处理真空中被等离子体去除。本计画利用电弧电浆磁力输送弯管技术，研制出一套可过滤电浆中微滴之真空电弧沈积系统。主要成果如下：第一年：一种新的过滤弧沉积物， ...更多信息 初步设计了一种Y型过滤弧沉积系统（Y-FAD），其沉积速度比现有的T型过滤弧沉积系统（T-FAD）提高3倍。为了实现大面积沉积，设计并制作了高通量磁场等离子体束扫描器。第二年：完成了Y-FAD的零件设计和部分试制。为了提高沉积速率，研究了向等离子体输送管道（=过滤管道）施加偏压的方法。结果发现，当施加适当的管道偏压时，沉积率提高了2 ~ 3倍。去年：具有两个阴极蒸发源的Y-FAD已经完成组装，并对其性能进行了测试。结果表明，新型Y-FAD可以提供足够高的沉积速率和宽的沉积面积。此外，发现由于高速沉积，衬底温度迅速升高，并且衬底需要冷却。少

The purpose of this project is that the development of principal technology of Cu-wiring film formation for LSI device tip by fry process using cathodic vacuum arc deposition, instead of current wet process of electroplating. In the cathodic vacuum arc deposition, solid metal is used as cathode of vacuum arc, the metal was directly evaporated by the cathode spot, and the film is plated by the ions in the metal vapor plasma without any gas. However ; the micron-order particles of cathode materials, so-called droplets, are also emitted from the cathode spot by its explosive phenomenon. The droplets have the film decreased unilbrmity and may block the wiring trench. The droplet should be removed from the processing vacuum are plasma. In this project, the vacuum arc deposition system with filtration of the droplets from the plasma using the technique of the arc plasma magnetically transporting through a bent duct. The principal outcomes are as follows.1st year : A new filtered arc depositi … More on system with Y shape filter duct (Y-FAD) was roughly designed, in which the deposition speed was expected to be three times higher than that in a current T-shape filtered arc deposition system (T-FAD). In order to realize the large area deposition, high-throughput plasma-beam scanner using magnetic field was designed and made. The 100 mm diameter deposition with well uniformity was attained with the scanner.2nd year: The detail of Y-FAD was deigned and partly manufactured. In order to improve the deposition rate, the method of applying the bias voltage to the plasma transportation duct (=filter duct) was examined. As a result, when the suitable duct bias was applied, it was found that the deposition rated increased twice to three times.Last year : The Y-FAD with two cathode evaporating sources has finished building up and its performance was examined. As a result, it was revealed the new Y-FAD can provide enough high-deposition rate and wide-deposition area. Furthermore, it was found that the substrate temperature increased quickly due to high-speed deposition and the substrate needed to be cooled. Less