权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

New Functional Transparent Conducting Thin Films using Multicomponent Oxides

使用多组分氧化物的新型功能性透明导电薄膜

基本信息

批准号：
08555079
负责人：
FUKUDA Ichiro
金额：
$ 3.33万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555079/
关键词：
Multicomponent oxide Transparent conducting thin film Sputtered thin film Magnetron Sputtering Transparent electrode Intelligent thin film 多元系酸化物 II-III-IV族化合物透明導電膜

项目摘要

New multicomponent (ZnO)_1-x-(MgO)x-(In_2O_3)_1-Y-(Ga_2O_3)Y-SnO_2 system transparent conducting oxide thin films have been preapred by magnetron sputtering using oxide powder targets. First, thin films using multicomponent oxides consisting of a combination of different binary compounds were pareapred by controlling the composition. In these systems, new transparent conducting oxide thin films were prepared in materials identified as ternary compounds such as Zn_2In_2O_5, ZnSnO_3, MgIn_2O_4, InGaO_3 and In_4Sn_3O_<12>. Consequently, thin films using multicomponent oxides consisting of a combination of different ternary compounds were pareapred by controlling the composition. In these systems, transparent conducting films could be prepared with all compositions of the multicomponent oxides. Highly transparent conducting thin films were prepared with the overall composition in multicomponent oxides such as Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-MgIn_2O_4, Zn_2In_2O_5-InGaO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> systems. The resulting electrical, optical and chemical properties of multicomponent oxide films changed continuously as the composition in the target was varied : the resistivity, band-gap energy, refractive index, etching rate and work function of Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-MgIn_2O_4, Zn_2In_2O_5-InGaO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> could be controlled continuously. It is concluded that transparent conducting multicomponent oxide thin films are applicable to specialized applications because their physical and chemical properties can be controlled by altering the composition of the components.

用磁控溅射法制备了（ZnO）_1-x-（MgO）x-（In_2O_3）_1-Y-（Ga_2O_3）Y-SnO_2系透明导电氧化物薄膜。首先，通过控制组合物，使用由不同二元化合物的组合组成的多组分氧化物的薄膜被pareapred。在这些体系中，以Zn_2In_2O_5，ZnSnO_3，MgIn_2O_4，InGaO_3和In_4Sn_3O_3等三元化合物为原料制备了新型透明导电氧化物薄膜<12>。因此，通过控制组成，使用由不同三元化合物的组合组成的多组分氧化物的薄膜被paraapred。在这些体系中，可以用所有组成的多元氧化物制备透明导电膜。在Zn_2In_2O_5-ZnSnO_3、Zn_2In_2O_5-MgIn_2O_4、Zn_2In_2O_5-InGaO_3、Zn_2In_2O_5-In_4Sn_3O_3和ZnSnO_3-In_4Sn_3O_3等多元氧化物体系中制备了高透明导电薄膜<12><12>。随着靶材成分的变化，薄膜的电学、光学和化学性质连续变化：Zn_2In_2O_5-ZnSnO_3、Zn_2In_2O_5-MgIn_2O_4、Zn_2In_2O_5-InGaO_3、Zn_2In_2O_5-In_4Sn_3O_3和ZnSnO_3-In_4Sn_3O_3的电阻率、带隙能、折射率、刻蚀速率和功函数<12>都<12>可以连续控制。它的结论是，透明导电多组分氧化物薄膜是适用于专门的应用，因为它们的物理和化学性质可以通过改变组分的组成来控制。