New Functional Transparent Conducting Thin Films using Multicomponent Oxides
New Functional Transparent Conducting Thin Films using Multicomponent Oxides
批准号:
08555079
负责人:
FUKUDA Ichiro
金额:
$3.33万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997
中文摘要
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英文摘要
New multicomponent (ZnO)_1-x-(MgO)x-(In_2O_3)_1-Y-(Ga_2O_3)Y-SnO_2 system transparent conducting oxide thin films have been preapred by magnetron sputtering using oxide powder targets. First, thin films using multicomponent oxides consisting of a combination of different binary compounds were pareapred by controlling the composition. In these systems, new transparent conducting oxide thin films were prepared in materials identified as ternary compounds such as Zn_2In_2O_5, ZnSnO_3, MgIn_2O_4, InGaO_3 and In_4Sn_3O_<12>. Consequently, thin films using multicomponent oxides consisting of a combination of different ternary compounds were pareapred by controlling the composition. In these systems, transparent conducting films could be prepared with all compositions of the multicomponent oxides. Highly transparent conducting thin films were prepared with the overall composition in multicomponent oxides such as Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-MgIn_2O_4, Zn_2In_2O_5-InGaO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> systems. The resulting electrical, optical and chemical properties of multicomponent oxide films changed continuously as the composition in the target was varied : the resistivity, band-gap energy, refractive index, etching rate and work function of Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-MgIn_2O_4, Zn_2In_2O_5-InGaO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> could be controlled continuously. It is concluded that transparent conducting multicomponent oxide thin films are applicable to specialized applications because their physical and chemical properties can be controlled by altering the composition of the components.
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T.Minami, T.Kakumu, Simokawa, S.Takata: "New transparent conducting ZnO-In_2O_3-SnO_2 thin films prepared by magnetron sputtering" Thin Solid Films. (in pyess).
T.Minami、T.Kakumu、Simokawa、S.Takata:“磁控溅射制备的新型透明导电 ZnO-In_2O_3-SnO_2 薄膜”固体薄膜。
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通讯作者:
T.Minami, T.Kakumu, K.Shimokawa and S.Takata: ""New transparent conducting ZnO-In_2O_3-SnO_2 thin films prepared by magnetron sputtering"" Thin Solid Films. (in press).
T.Minami、T.Kakumu、K.Shimokawa 和 S.Takata:“通过磁控溅射制备新型透明导电 ZnO-In_2O_3-SnO_2 薄膜””固体薄膜。
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T.Minami, Y.Takeda, S.Takata, T,Kakumu: "Preparation of transparent conducting In_4Sn_30_<12> thin films by DC magnetron sputtering" Thin Solid Films. 308-309. 13-18 (1997)
T.Minami、Y.Takeda、S.Takata、T、Kakumu:“通过直流磁控溅射制备透明导电 In_4Sn_30_<12> 薄膜”固体薄膜。
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T.Minami, Y.Takeda, T.Kakumu, S.Takata, I.Fukuda: "Preparation of highly transparent and conducting Ga_20_3-In_20_3 films by direct current magnetron sputtering" J.Vac.Sci.Technol.A. 15(3). 958-962 (1997)
T.Minami、Y.Takeda、T.Kakumu、S.Takata、I.Fukuda:“通过直流磁控溅射制备高透明导电 Ga_20_3-In_20_3 薄膜” J.Vac.Sci.Technol.A。
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通讯作者:
T.Minami, Y.Takeda, S.Takata, T.Kakumu: "preparation of transparent conducting In_4Sn_3O_<12> thin films by DC magnetron sputtering" Thin Solid Films. 308-309. 13-18 (1997)
T.Minami、Y.Takeda、S.Takata、T.Kakumu:“通过直流磁控溅射制备透明导电 In_4Sn_3O_<12> 薄膜”固体薄膜。
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共 15 条
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