Wide Concentration Range Zn-doping in CuGaS_2 using Atomic Layr Epitaxy and Elucidation of the Role of Zn

使用原子层外延在 CuGaS_2 中进行宽浓度范围的 Zn 掺杂并阐明 Zn 的作用

• 批准号: 08650007
• 负责人: IIDA Seishi
• 金额: $ 1.41万
• 依托单位: Nagaoka University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650007/
• 关键词: Atomic Layr Epitaxy; Alternate Source Feeding; CuGaS_2; Zn-doping; Vapor phase epitaxy; Chalcopyrite; Luminescence; Chalcopyrite; CuGaS_2; Vapor phase epitaxy; Zn-doping; Atomic layer Epitaxy; Luminescence; 気相成長; 発光スペクトル; ラマン散乱; ドナー; アクセプ

From experimental investigation of vapor phase epitaxial growth of CuGaS_2 on GaP (100) substrates under alternate feeding conditions using the sources of CuCl, (C_2H_5)_5GaCl and H_2S,the followings became clear.Under separated alternate feeding of metal sources (CuCl, (C_2H_5)_2GaCl) and H_2S,the growth oriented toward c-axis with growth rate per cycle of 1/8 c lattice constant, i.e., 1/2 mono-molecular layr thickness occurs. While under completely separated alternate source feeding, the growth oriented toward c-axis with growth rate per cycle of one mono-layr thickness does. These results are thought to correspond to atomic layr growth. One supply of each source causes one atomic layr growth, and H_2S supply between two kind of metal sources supply is essential for the growth. This fact suggests an occurrence of rearrangement of two kinds of metallic atoms is necessary for the growth of CuGaS_2.Under completely separated alternate source feeding, the appearance of Zn-related luminescence showed big difference between the cases with simultaneous Zn and Cu sources feeding and with simultaneous Zn and Ga sources feeding. However, whether this fact is directly related to site selective doping of Zn or not must be discussed taking into account rearrangement possibility of two kind of metallic atoms described above.

通过使用CuCl、(C_2H_5)_5GaCl和H_2S源在交替进料条件下在GaP(100)衬底上气相外延生长CuGaS_2的实验研究发现：在金属源(CuCl、(C_2H_5)_2GaCl)和H_2S分别交替进料下，生长方向为c轴 每个周期的生长速率为 1/8 c 晶格常数，即 1/2 单分子层厚度。而在完全分离的交替源供给下，生长方向为 c 轴，单层厚度的每个周期的生长速率确实如此。这些结果被认为对应于原子层生长。每种源的一次供给引起一个原子层的生长，两种金属源之间的H_2S供给对于生长至关重要。这一事实表明，两种金属原子发生重排对于CuGaS_2的生长是必要的。在完全分离的交替源补给下，与Zn相关的发光的出现在同时补给Zn和Cu源的情况与同时补给Zn和Ga源的情况之间表现出很大的差异。然而，这一事实是否与Zn的位点选择性掺杂直接相关，必须考虑到上述两种金属原子重排的可能性。

项目成果

J.Mitomo, H.Sato, T.Terasaka, T.Matsumoto, H.Uchiki and S.Iida: "Vapor Phase Epitaxy of CuGaS_2 Using CuCl,Dietylegalliumchloride and H_2S Sources under Simultaneous and Alternate Feeding Conditions" Inst.Phys,Conf.Ser.No 152 Ternary and Multinary Compoun

J.Mitomo、H.Sato、T.Terasaka、T.Matsumoto、H.Uchiki 和 S.Iida：“在同时和交替进料条件下使用 CuCl、二乙基氯化镓和 H_2S 源进行 CuGaS_2 的气相外延”Inst.Phys，Conf。

J.Mitomo, H.Sato, T.Terasako, T.Matsumoto, H.Uchiki and S.Iida: "Vapor Phase Epitaxy of CuGaS_2 Using CuCl,Dietylgalliumchloride and H_2S sources under Simultaneous and Alternate Feeding Conditions" Porc.ICTMC-11(Institute of Physics). (印刷中). (1998)

J.Mitomo、H.Sato、T.Terasako、T.Matsumoto、H.Uchiki 和 S.Iida：“在同时和交替进料条件下使用 CuCl、二乙基氯化镓和 H_2S 源进行 CuGaS_2 的气相外延” Porc.ICTMC-11(物理研究所）（正在出版）（1998）。

J.Mitomo, H.Sato, T.Terasako, T.Matsumoto, H.Uchiki and S.Iida: "vapor Phase Epitaxy of CuGaS_2 Using CuCl, Dietylegalliumchloride and H_2S Sources under Simultaneous and Altemate Feeding Conditions" Inst.Phys.Conf.Ser.No 152, Termary and Multinary Compou

J.Mitomo、H.Sato、T.Terasako、T.Matsumoto、H.Uchiki 和 S.Iida：“在同时和交替进料条件下使用 CuCl、二乙基氯化镓和 H_2S 源进行 CuGaS_2 的气相外延” Inst.Phys.Conf。