Self-orgnization of Al nano-structure using selective reactivity of step/terrace structure on Si surface

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We tried to form a regular structure such as a periodic step/terrace on a Si(111) wafer surface using wet process. And we also investigated to form the ordered Al nano-structure in wide area of a silicon wafer surface using the selective reactivity on the H-terminated Si(111) surface with the periodic step/terrace structure. The results of research are shown as follow.1. The formation of the periodic step/terrace structure with regular step edge was achieved by NH_4F aqueous solution at low DOC condition.2. It was found that the Si(111) surface was self-organized to the step/terrace structure which period was fixed by value of the off-angle of wafer.3. We successfully obtained the atomic image of the area nearby the step edge on the surface of hydrogen terminated Si(111) prepared by NH_4F treatment.4. As a result of comparison of an Al deposition rate and a thermal desorption behavior of hydrogen on H-terminated Si surface, we revealed the surface reaction mechanism in the Al deposition process that DMA1H selectively react only with silicon di- and tri-hydride species on the hydrogen-terminated silicon surface.5. The formation of the aluminum on NH_4F treated Si(111) surface, on which di-hydride structure was localized at step edge, preferentially occurred at the step edge, as the result of selective reaction of DMA1H with a hydrogen atom of di-hydride structure.