Self-orgnization of Al nano-structure using selective reactivity of step/terrace structure on Si surface

利用硅表面阶梯/阶梯结构的选择性反应性自组织铝纳米结构

• 批准号: 08650034
• 负责人: SAKAUE Hiroyuki
• 金额: $ 1.34万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650034/
• 关键词: H-terminated Si surface; step; terrace structure; flattening treatment; dissolved oxygen concentration; Al nano-structure; DMAIH; selective reaction; アルミニウム選択堆積; 平坦化表面; 昇温脱離法; テラス周期構造

We tried to form a regular structure such as a periodic step/terrace on a Si(111) wafer surface using wet process. And we also investigated to form the ordered Al nano-structure in wide area of a silicon wafer surface using the selective reactivity on the H-terminated Si(111) surface with the periodic step/terrace structure. The results of research are shown as follow.1. The formation of the periodic step/terrace structure with regular step edge was achieved by NH_4F aqueous solution at low DOC condition.2. It was found that the Si(111) surface was self-organized to the step/terrace structure which period was fixed by value of the off-angle of wafer.3. We successfully obtained the atomic image of the area nearby the step edge on the surface of hydrogen terminated Si(111) prepared by NH_4F treatment.4. As a result of comparison of an Al deposition rate and a thermal desorption behavior of hydrogen on H-terminated Si surface, we revealed the surface reaction mechanism in the Al deposition process that DMA1H selectively react only with silicon di- and tri-hydride species on the hydrogen-terminated silicon surface.5. The formation of the aluminum on NH_4F treated Si(111) surface, on which di-hydride structure was localized at step edge, preferentially occurred at the step edge, as the result of selective reaction of DMA1H with a hydrogen atom of di-hydride structure.

我们尝试使用湿法工艺在Si（111）晶片表面上形成规则结构，例如周期性台阶/平台。我们还研究了在具有周期性台阶/平台结构的H端Si（111）表面上利用选择性反应在硅片表面大面积形成有序Al纳米结构。研究结果如下：1.在低DOC条件下，NH_4F水溶液可形成具有规则台阶边缘的周期性台阶/平台结构.发现Si（111）表面自组织为台阶/平台结构，其周期由晶片的偏角决定.成功地获得了NH_4F处理的氢封端Si（111）表面台阶边缘附近区域的原子像.通过比较Al沉积速率和氢在氢封端的Si表面上的热脱附行为，揭示了Al沉积过程中DMA 1H选择性地只与氢封端的Si表面上的硅二氢化物和硅三氢化物物种反应的表面反应机理.在NH_4F处理的Si（111）表面上，由于DMA 1H选择性地与二氢化物结构的氢原子反应，铝优先在台阶边缘形成，二氢化物结构位于台阶边缘。

项目成果

Hiroyuki Sakaue, et.al.: "Wafer-Scale Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface" Extended Abstracts of the 1998 International Conf.on Solid State Devices and Materials. 434-435 (1998)

Hiroyuki Sakaue 等人：“氢端硅表面上周期性台阶/平台结构的晶圆级自组织”1998 年国际固态器件和材料会议的扩展摘要。

坂上 弘之: "Wafer-Scale Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface" Extended Abstracts of the 1998 International Conf.on Solid State Devices and Materials. 434-435 (1998)

Hiroyuki Sakagami：“氢端硅表面上周期性台阶/平台结构的晶圆级自组织”1998 年国际固态器件和材料会议的扩展摘要 434-435 (1998)。

坂上 弘之: "Scanning Tunneling Microscopy Observation on Atomic Structures of Step Edges and Etch Pits on NH_4F-Treated Si(lll) Surface" Extended Abstracts of the 1996 International Conf.on Solid State Devices and Materials. 392-364 (1996)

Hiroyuki Sakagami：“扫描隧道显微镜观察 NH_4F 处理的 Si(III) 表面的阶梯边缘和蚀刻坑的原子结构”1996 年国际固态器件和材料会议的扩展摘要 392-364 (1996)。

Hiroyuki Sakaue, et.al.: "Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface" JRCAT International Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces.11-12 (1997)

Hiroyuki Sakaue 等：“Self-Organization of periodic Step/Terrace Structure on Hydrogen-Termated Si Surface” JRCAT International Workshop on Science and Technology of Hydrogen-Terminal Silicon Surfaces.11-12 (1997)

坂上 弘之: "Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface" JRCAT International Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces. 11-12 (1997)

Hiroyuki Sakagami：“氢封端硅表面上的周期性台阶/阶地结构的自组织”JRCAT 氢封端硅表面科学与技术国际研讨会 11-12 (1997)。