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Measuring the Probability Density of Quantum Confined States

Measuring the Probability Density of Quantum Confined States
测量量子限域的概率密度
批准号:
08650380
负责人:
MORI Nobuya
金额:
$1.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

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中文摘要
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英文摘要
In order to analyze the effect of electron-electron interaction on measuring the probability density of quantum confined states, a computer program has been made which numerically calculates the exact N-electron states in a quantum dot by diagonalizing the Hamiltonian matrix.Electronic structures in circular, elliptic and triangular shaped quantum dots containing single or N electrons have then been calculated using the computer program. In a circular quantum dot, the addition energy shows a clear structure as a function of N due to the shell filling and the spin polarized half filling. In an elliptic quantum dot, however, the structure is found to be diminished, which is attributed to the splitting of the degenerated single-particle states due to the asymmetric confining potential. Tunneling matrix elements through a quantum dot have been calculated by using the eigen states evaluated with the exact diagonalization.Energy relaxation time through longitudinal-acoustic phonon emission has also been calculated for a GaAs quantum dot with N electrons (from N=1 to 4), where the electrons in a narrow quantum well are confined by a parabolic confining potential. The electronic states are numerically evaluated by taking into account of the Coulomb interaction between the electrons, and the relaxation time is estimated by using the Fermi's golden rule. As the number of electrons increases, the energy levels become dense, and the number of relaxation channels drastically increases. From the evaluation of the relaxation time associated with all the relaxation channels, several relaxation processes are found to be accelerated by indirect process through some intermediate states between the initial and the final states.
期刊论文(21)
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会议论文
J.M.Feng, J.H.Park, S.Ozaki, H.Kubo, N.Mori and C.Hamaguchi: "Resonant optical-phonon assisted tunnelling in an asymmetric double-quantum-well structure" Semiconductor Science and Technology. 12. 1116-1120 (1997)
J.M.Feng、J.H.Park、S.Ozaki、H.Kubo、N.Mori 和 C.Hamaguchi:“非对称双量子阱结构中的谐振光学声子辅助隧道效应”半导体科学与技术。
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通讯作者:
K.Moriyasu, S.Osaka, N.Mori and C.Hamaguchi: "Effect of quantum confinement and lattice relaxation on electronic states in GaAs/In_<0.2>Ga_<0.8>As/GaAs quantum dots" Japanese Journal of Applied Physics. 36. 3932-3935 (1997)
K.Moriyasu、S.Osaka、N.Mori 和 C.Hamaguchi:“量子限制和晶格弛豫对 GaAs/In_<0.2>Ga_<0.8>As/GaAs 量子点中电子态的影响”《日本应用物理学杂志》。
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通讯作者:
S.Ozaki, J.M.Feng, J.H.Park, S.Osako, H.Kubo, M.Morifuji, N.Mori anc C.Hamaguchi: "Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells" Journal of Applied Physics. 83. 962-965 (1998)
S.Ozaki、J.M.Feng、J.H.Park、S.Osako、H.Kubo、M.Morifuji、N.Mori 和 C.Hamaguchi:“非对称双量子阱中谐振光学声子辅助隧道效应的观察”应用物理学杂志。
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通讯作者:
T.Ezaki, N.Mori, C.Hamaguchi: "Electronic structures in circular,elliptic,and triangular quantum dots" Physical Review B. 56. 6428-6431 (1997)
T.Ezaki、N.Mori、C.Hamaguchi:“圆形、椭圆形和三角形量子点中的电子结构”物理评论 B. 56. 6428-6431 (1997)
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19
    Study of Quasi-ballistic Electron Transport in Silicon NanodotArray
    • 批准号:
      22560296
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.83万
    • 财政年份:
      2010
    • 负责人:
      MORI Nobuya
    • 依托单位:
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    • 批准号:
      13650344
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.37万
    • 财政年份:
      2001
    • 负责人:
      MORI Nobuya
    • 依托单位:
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