Study of Quasi-ballistic Electron Transport in Silicon NanodotArray

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A model to describe the underlying physics of high-energy ballistic electron emission from a porous silicon diode consisting of nanometer-size Si nanodot (SiND) is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. The model is extended to be applicable to metal-semiconductor diodes consisting of SiND films. Strain effects on avalanche multiplication in a one-dimensional SiND array have been theoretically studied. Larger carrier multiplication factor is observed under compressive strain condition. Impacts of atomic disorder on avalanche multiplication have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.