Formation of Shallow P-N Junction in Silicon Wafer by Solid-Phase Diffusion at Low-Temperatures.

通过低温固相扩散在硅片中形成浅 P-N 结。

基本信息

批准号：
08650411
负责人：
ISHIKAWA Yutaka
金额：
$ 1.41万
依托单位：
Nippon Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650411/
关键词：
solid-phase diffusion silicon impurity low-temperature process

项目摘要

In the present work, it has been investigated to form pn junction in silicon wafer at low-temperatures. The pn junction can be formed at low-temperatures by using the enhanced diffusion of impurities (phosphorus and boron ) during heating of silicon with light irradiation. The important results are as follows.1. The diffusion of impurities during heating of silicon with light irradiation from a halogen lamp or a xenon lamp is enhanced considerably. The diffusion coefficients of impurities in such conditions are 100-300 times larger than those during usual heating method by furnace.2. It is possible to diffuse impurities into silicon at 540ﾟC by using the enhanced diffusion during heating with light irradiation.3. The pn junction diode made by such method at low-temperatures indicates a good electrical characteristics.4. After such enhanced diffusion, no defects are found in the silicon wafer. Therefore, it is concluded that the present method for doping of impurities at low-temperatures is useful to device fabrication.5. The enhanced diffusion in (100)-oriented silicon wafer is larger than that in (111) wafer. While phosphorus and boron show a great enhanced diffusion, arsenic shows no enhanced diffusion.6. The enhanced diffusion during light irradiation is due to generation of the excess self-interstitials in silicon wafer, which may be injected into silicon wafer from the interface between the diffusion source film and the silicon wafer during light irradiation.7. The wavelength of light which is effective for the enhanced diffusion and the diffusion at low-temperatures is 0.6-1.0 mum.

在目前的工作中，已经研究了在低温下在硅晶片中形成PN连接。可以通过使用光照射在硅加热过程中使用杂质（磷和硼）的增强杂质（磷和硼）的扩散在低温下形成PN连接。重要的结果如下1。小心地增强了卤素灯或氙气灯的光照射在加热硅过程中杂质的扩散。在这种条件下，杂质的扩散系数比炉子通常加热法期间的杂质大100-300倍。2。通过使用光照射加热期间的增强扩散，可以在540 c下将杂质扩散到硅中。3。这种方法在低温下制造的Pn连接二极管表明具有良好的电特性。4。这种增强的扩散后，在硅赌注中未发现缺陷。因此，可以得出结论，在低温下掺杂杂质的当前方法对装置制造有用5。（100）面向硅的扩散比（111）Waver中的扩散大。尽管磷和硼表现出很大的扩散，但砷没有增强的扩散。6。光照射过程中增强的扩散是由于硅摇摆剂中过量的自身裂化的产生，可以从扩散源膜与光照射期间的硅摇动之间的界面中注入硅摇动。7。光的波长对于增强的扩散和低温下的扩散为0.6-1.0妈妈。