Helium-like impurity centers in silicon and germanium: Infrared light interaction, non-equilibrium distributions and optoelectronic applications

硅和锗中的类氦杂质中心：红外光相互作用、非平衡分布和光电应用

• 批准号: 389056032
• 负责人: Professor Dr. Heinz-Wilhelm Hübers
• 金额: --
• 依托单位: Institut für Physik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/389056032?language=en
• 关键词: Helium; like; impurity; centers; silicon

The joint goal of the applicant groups is to investigate the potential of helium-like impurity centers in the elemental semiconductors silicon and germanium for optoelectronic applications in the mid-infrared wavelength range. The activation energies of such impurities fall into the infarred spectral region. In particular, we want to study optical, electro-optical and magneto-optical as well as non-equilibrium properties and dynamical processes of double donor centers in silicon and double and triple acceptors in germanium. The temporal and spectral characteristics of such materials depend on fundamental features such as the nature of the electrically active centers formed in the semiconductor after doping, the structure of the excited levels of all active impurities, including their spin-orbit and spin-triplet states, the capture and intracenter relaxation of non-equilibrium charge carriers. These are not all known or not completely understood for the materials. The largest intracenter transitions of helium-like impurity centers have energies exceeding the characteristic energy of the optical phonon of the host lattice. This is expected to slow down the intracenter relaxation and, therefore, the whole capture process. Additionally, the forbidden triplet-singlet decay may result in long relaxation times for those electrons ending in such triplet states. These features will be experimentally investigated by two-color time-resolved spectroscopy and theoretically modelled. A special focus is on the technological aspects of crystal growth and doping of the semiconductors.

申请人小组的共同目标是研究元素半导体硅和锗中类氦杂质中心在中红外波长范围内的光电应用的潜力。这些杂质的激活能落在红外光谱区。特别是，我们要研究的光学，电光和磁光以及非平衡性质和动力学过程的双施主中心在硅和双和三重受体锗。这种材料的时间和光谱特性取决于基本特征，例如掺杂后在半导体中形成的电活性中心的性质，所有活性杂质的激发能级的结构，包括它们的自旋轨道和自旋三重态，非平衡电荷载流子的捕获和中心内弛豫。这些都不是已知的或不完全理解的材料。类氦杂质中心的最大中心内跃迁的能量超过了主晶格的光学声子的特征能量。预计这将减缓中心内弛豫，从而减缓整个捕获过程。此外，禁戒三重态-单重态衰变可能导致终止于这种三重态的那些电子的长弛豫时间。这些功能将实验研究双色时间分辨光谱和理论建模。特别关注的是晶体生长和半导体掺杂的技术方面。

项目成果

Even‐Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in Silicon

硅浅供体中心的红外发射、吸收和拉曼散射光谱中的偶宇称激发态

• DOI: 10.1002/pssb.201800514
• 发表时间: 2019
• 期刊: physica status solidi (b)
• 作者: S. G. Pavlov;N. V. Abrosimov;V. B. Shuman;L. М. Portsel;А. N. Lodygin;Yu. A. Astrov;R. Kh. Zhukavin;V. N. Shastin;K. Irmscher;A. Pohl;H.-W. Hübers
• 通讯作者: H.-W. Hübers

Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

掺杂硅中基于反转的激光和拉曼激光的竞争

• DOI: 10.1103/physrevx.8.041003
• 发表时间: 2018
• 期刊: Physical Review X
• 影响因子: 12.5
• 作者: S. G. Pavlov;N. Deßmann;B. Redlich;A. F. G. van der Meer;N. V. Abrosimov;H. Riemann;R. Kh. Zhukavin;V. N. Shastin;H.-W. Hübers
• 通讯作者: H.-W. Hübers

Further investigations of the deep double donor magnesium in silicon

• DOI: 10.1103/physrevb.98.045202
• 发表时间: 2018-07-24
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Abraham, R. J. S.;DeAbreu, A.;Thewalt, M. L. W.
• 通讯作者: Thewalt, M. L. W.

Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon

双供体镁与硅中的 III 族受体配对形成的浅供体配合物

• DOI: 10.1103/physrevb.99.195207
• 发表时间: 2019
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: R. J. S. Abraham;V. B. Shuman;L. M. Portsel;A. N. Lodygin;Yu. A. Astrov;N. V. Abrosimov;S. G. Pavlov;H.-W. Hübers;S. Simmons;M. L. W. Thewalt
• 通讯作者: M. L. W. Thewalt

Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

单轴应力对掺铋硅中声子辅助弛豫的影响

• DOI: 10.1063/1.5134691
• 发表时间: 2020
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: R. Kh. Zhukavin;S. G. Pavlov;N. Stavrias;K. Saeedi;K. A. Kovalevsky;P. J. Phillips;V. V. Tsyplenkov;N. V. Abrosimov;H. Riemann;N. Deβmann;H.-W. Hübers;V. N. Shastin
• 通讯作者: V. N. Shastin