The Investigation of break down mechanisms in silicon dioxide films by a combination of electrical and structural analysis methods

（1）设置测量仪器和数据分析系统，由设置测量控制软件用于评估SiO-D22薄膜，并设置了研究设施已完成。（2） Clarification of the injection charge dependent deterioration of electrical insulation charteristicsBy varying the amount of injected charge into SiOD22 films， the change of electrical charteristics during breakdown were measured。更具体地说， the deterioration of the electrical insulation characteristics of SiO-D22-D2 films were measured under different stress conditions and for different SiO-D22-D2 film areas。（3） Structural investigations of SiO-D22-D2 filmsThe thickness uniformity of SiO-D22-D2 films in dependence of the process conditions was analyzed by XPS （X-Ray Photoelectron Spectroscopy） and AFM （Atomic Force Microscope）。作为一个结果，SiO-D22-D2电影统一可以改进，如果N-原子是引入在电影接口形成的早期阶段。（4） Clarification of the injection charge dependent deterioration of electrical insulation characteristics By analyzing the change of electrical characteristics of an 6.8 nm thick SiO-D22-D2 film， before and after FN stressing， it is made clear that stressing generates neutral trap sites at a distance of 4.47 nm from the Si-cathode interface having a trap site energy of 2.3 eV。这些陷阱网站对电气隔离特征的确定是负责任的。Moreover，电影紧张度对压力状况的依赖已经分析出来。

(1) Set-up of measurement instruments and data analyzing systemsBy setting-up the measurement control software for the evaluation of SiOィイD22ィエD2 films, the set-up of the research facilities has been finished.(2) Clarification of the injection charge dependent deterioration of electrical insulation characteristicsBy varying the amount of injected charge into SiOィイD22ィエD2 films, the change of electrical characteristics during breakdown were measured. More specifically, the deterioration of the electrical insulation characteristics of SiOィイD22ィエD2 films were measured under different stress conditions and for different SiOィイD22ィエD2 film areas.(3) Structural investigations of SiOィイD22ィエD2 filmsThe thickness uniformity of SiOィイD22ィエD2 films in dependence of the process conditions was analyzed by XPS (X-Ray Photoelectron Spectroscopy) and AFM (Atomic Force Microscope). As a result, SiOィイD22ィエD2 film uniformity can be improved if N-atoms are introduced during an early stage of film interface formation.(4) Clarification of the injection charge dependent deterioration of electrical insulation characteristicsBy analyzing the change of electrical characteristics of an 6.8 nm thick SiOィイD22ィエD2 film, before and after FN stressing, it is made clear that stressing generates neutral trap sites at a distance of 4.47 nm from the Si-cathode interface having a trap site energy of 2.3 eV. These trap sites are responsible for the deterioration of the electrical isolation characteristics. Moreover, the film thickness dependence on stress conditions was analyzed.