The Investigation of break down mechanisms in silicon dioxide films by a combination of electrical and structural analysis methods

结合电学和结构分析方法研究二氧化硅薄膜的击穿机制

• 批准号: 10305023
• 负责人: MASAOKA Fujio
• 金额: $ 25.34万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10305023/
• 关键词: Silicon dioxide; Flash memory; Structural analysis

(1) Set-up of measurement instruments and data analyzing systemsBy setting-up the measurement control software for the evaluation of SiOィイD22ィエD2 films, the set-up of the research facilities has been finished.(2) Clarification of the injection charge dependent deterioration of electrical insulation characteristicsBy varying the amount of injected charge into SiOィイD22ィエD2 films, the change of electrical characteristics during breakdown were measured. More specifically, the deterioration of the electrical insulation characteristics of SiOィイD22ィエD2 films were measured under different stress conditions and for different SiOィイD22ィエD2 film areas.(3) Structural investigations of SiOィイD22ィエD2 filmsThe thickness uniformity of SiOィイD22ィエD2 films in dependence of the process conditions was analyzed by XPS (X-Ray Photoelectron Spectroscopy) and AFM (Atomic Force Microscope). As a result, SiOィイD22ィエD2 film uniformity can be improved if N-atoms are introduced during an early stage of film interface formation.(4) Clarification of the injection charge dependent deterioration of electrical insulation characteristicsBy analyzing the change of electrical characteristics of an 6.8 nm thick SiOィイD22ィエD2 film, before and after FN stressing, it is made clear that stressing generates neutral trap sites at a distance of 4.47 nm from the Si-cathode interface having a trap site energy of 2.3 eV. These trap sites are responsible for the deterioration of the electrical isolation characteristics. Moreover, the film thickness dependence on stress conditions was analyzed.

(1)测量仪器和数据分析系统的搭建。通过搭建SiO φ φ D22 φ φ D2薄膜评价测量控制软件，完成了研究设备的搭建。(2)澄清的注入电荷相关的电气绝缘恶化characteristicsBy不同量的电荷注入SiOィイD22摊位ィエD2电影,在分解测量电特性的变化。更具体地说，在不同的应力条件下，测量了不同SiO φ φ D22 φ φ D2薄膜面积下SiO φ φ D22 φ φ D2薄膜电绝缘特性的劣化。(3) SiO φ φ D22 φ φ D2薄膜的结构研究采用x射线光电子能谱（XPS）和原子力显微镜（AFM）分析了SiO φ φ D22 φ φ D2薄膜厚度均匀性与工艺条件的关系。结果表明，如果在膜界面形成的早期阶段引入n原子，可以改善SiO γ γ γ - D22 γ - D2薄膜的均匀性。(4)澄清的注入电荷相关的电气绝缘恶化characteristicsBy分析电特性的变化6.8 nm厚的SiOィイD22摊位ィエD2电影,之前和之后的FN强调,这是明确表示,强调生成中性陷阱站点的距离4.47 nm Si-cathode界面陷阱站点能源2.3 eV。这些疏水阀的位置是导致电气隔离特性恶化的原因。此外，还分析了薄膜厚度与应力条件的关系。

项目成果

Tetsuo Endoh: "A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films"JOURNAL OF APPLIED PHYSICS. 86 No. 4. 2095-2099 (1999)

Tetsuo Endoh：“对 6.8 nm 超薄二氧化硅薄膜中应力引起的漏电流进行定量分析并提取陷阱特性”《应用物理学杂志》。

Tetsuo Endoh: "A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films"JOURNAL OF APPLIED PHYSICS. 86 No.4. 2095-2099 (1999)

Tetsuo Endoh：“对 6.8 nm 超薄二氧化硅薄膜中应力引起的漏电流进行定量分析并提取陷阱特性”《应用物理学杂志》。

Tetuo Endoh: "A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8nm ultrathin silicon dioxide films"JOURNAL OF APPLIED PHYSICS. 86 No.4. 2095-2099 (1999)

Tetuo Endoh：“6.8nm 超薄二氧化硅薄膜中应力引起的漏电流的定量分析和陷阱特性的提取”应用物理学杂志。