The Investigation of break down mechanisms in silicon dioxide films by a combination of electrical and structural analysis methods

(1) Set-up of measurement instruments and data analyzing systemsBy setting-up the measurementcontrol software for the evaluation of SiO D2 films，the set-up of the research facilities has been finished.(2) Clarification of the injection chargedependent deterioration of electrical insulation characteristicsBy varying the amount of injectedcharge into SiO D22 D2 films，the change of electrical characteristics during breakdown were measured. More specificallythe deterioration of the electrical insulation characteristics of SiO D22 D2 films were measureddifferent stress conditions and for different SiO D22 film areas.(3) Structuralinvestigations of SiO D22 SiO D2 filmsThe thickness uniformity of SiO D22 SiO D2 films in dependence ofthe process conditions was analyzed by XPS (X-Ray Photoelectron Spectroscopy) and AFM （Atomic Force）Microscope). As a result，SiO D22 film uniformity can be improved if N-atoms are introduced during an early stage of filminterface formation.(4) Clarification of the injection charge dependent deterioration of electricalinsulation characteristicsBy analyzing the change of electrical characteristics of an 6.8 nm thickSiO D22 film, before and after FN stressing，it is made clear that stressing generates neutral trap sites at a distance of 4.47 nm from theSi-cathode interface having a trap site energy of 2.3 eV.这些trap sites are responsible for thedeterioration of the电子隔离characteristics. Moreover，the film thickness dependence on stress conditions was analyzed。

(1) Set-up of measurement instruments and data analyzing systemsBy setting-up the measurement control software for the evaluation of SiOィイD22ィエD2 films, the set-up of the research facilities has been finished.(2) Clarification of the injection charge dependent deterioration of electrical insulation characteristicsBy varying the amount of injected charge into SiOィイD22ィエD2 films, the change of electrical characteristics during breakdown were measured. More specifically, the deterioration of the electrical insulation characteristics of SiOィイD22ィエD2 films were measured under different stress conditions and for different SiOィイD22ィエD2 film areas.(3) Structural investigations of SiOィイD22ィエD2 filmsThe thickness uniformity of SiOィイD22ィエD2 films in dependence of the process conditions was analyzed by XPS (X-Ray Photoelectron Spectroscopy) and AFM (Atomic Force Microscope). As a result, SiOィイD22ィエD2 film uniformity can be improved if N-atoms are introduced during an early stage of film interface formation.(4) Clarification of the injection charge dependent deterioration of electrical insulation characteristicsBy analyzing the change of electrical characteristics of an 6.8 nm thick SiOィイD22ィエD2 film, before and after FN stressing, it is made clear that stressing generates neutral trap sites at a distance of 4.47 nm from the Si-cathode interface having a trap site energy of 2.3 eV. These trap sites are responsible for the deterioration of the electrical isolation characteristics. Moreover, the film thickness dependence on stress conditions was analyzed.