RII Track-4: Real-Time Radiation Dosimetry Using Flash Memory
RII Track-4:使用闪存进行实时辐射剂量测量
基本信息
- 批准号:1929099
- 负责人:
- 金额:$ 23.33万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2019
- 资助国家:美国
- 起止时间:2019-12-15 至 2023-11-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Throughout the world, radiation exposure has been on the rise due to the increased use of nuclear power, medical procedures, nuclear weapons and natural disasters affecting power plants such as in Fukushima, Japan. Increased exposure to radiation has both short- and long-term detrimental effects on the human body and rapid diagnosis (triage) of an absorbed dose of radiation is critical for survivability. Thus, it is critical to have a fast, cost-effective and field-deployable personal dosimetry solution without the overhead of additional hardware or processing equipment. The project will develop a handheld, real-time radiation dosimetry solution using commercially available flash memory chips. Since memory chips are widely used in many embedded systems (e.g., smartphones) and wearable devices (e.g., fitness belts), this project’s concept could provide a paradigm shift in radiation dosimetry through distributed smart devices, which will be very useful for health monitoring, remote sensing, military applications, nuclear-reactor safety and space applications. In addition, the project has a strong educational component that includes the training of underrepresented students, the involvement of undergraduate students in research and the incorporation of the project's research findings into coursework.The objective of this project is to develop a novel cost-effective radiation-dosimeter technology using the bit error rate of commercial flash memory. The dosimetry solution will provide real-time read-out of absorbed dose value, which is ideal for rapid diagnosis applications to minimize health risk for those who work closer to radiation environment. The technology can also facilitate a wireless sensor network (e.g., through smartphones), and transmit data to a central facility to provide better situational awareness over a larger area. The project takes advantage of the instrumentation and expertise at Oak Ridge National Laboratory to demonstrate the validity of a flash memory-based dosimetry concept through a series of radiation-exposure experiments. Both modeling and experimentation will be performed to determine the range of operation of the proposed dosimeter and to enhance its accuracy, sensitivity and selectivity. In addition, we propose novel measurement techniques in order to understand and quantify the (i) dose-enhancement effect when ionizing radiation goes through the back end of the line metal layers of a chip, (ii) directionality effects of the incident radiation beam on the memory and (iii) ionization vs. displacement damage effect in the flash-memory array. Thus, this research advances our knowledge on the radiation-matter interaction and the radiation-related reliability physics of semiconductor devices. The research will also enable a wireless, passive, in-situ, real-time radiation-dosimetry solution that can be customized for a wide range of applications including personnel dosimetry, safety, space and commercial applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
在全世界,由于核电的使用、医疗程序、核武器和影响发电厂的自然灾害的增加,如日本福岛,辐射照射一直在增加。增加辐射照射对人体有短期和长期的有害影响,对吸收的辐射剂量进行快速诊断(分类)对生存能力至关重要。因此,至关重要的是要有一个快速的,具有成本效益和现场部署的个人剂量测定解决方案,而无需额外的硬件或处理设备的开销。该项目将开发一个手持,实时辐射剂量测定解决方案,使用商业上可用的闪存芯片。由于存储器芯片广泛用于许多嵌入式系统(例如,智能电话)和可穿戴设备(例如,该项目的概念可通过分布式智能装置实现辐射剂量测定的范式转变,这将对健康监测、遥感、军事应用、核反应堆安全和空间应用非常有用。此外,该项目具有很强的教育内容,包括培训代表性不足的学生,让本科生参与研究,并将该项目的研究成果纳入课程,该项目的目标是利用商业闪存的误码率开发一种新的具有成本效益的辐射剂量计技术。该剂量测定解决方案将提供吸收剂量值的实时读出,这是快速诊断应用的理想选择,可最大限度地降低在辐射环境附近工作的人员的健康风险。该技术还可以促进无线传感器网络(例如,通过智能手机),并将数据传输到中央设施,以在更大的区域内提供更好的态势感知。该项目利用橡树岭国家实验室的仪器和专业知识,通过一系列辐射暴露实验来证明基于闪存的剂量测定概念的有效性。将进行建模和实验,以确定拟议的剂量计的操作范围,并提高其准确性,灵敏度和选择性。此外,我们提出了新的测量技术,以了解和量化(i)剂量增强效应时,电离辐射通过后端的线金属层的芯片,(ii)方向性影响的入射辐射束上的存储器和(iii)电离与位移损坏效应的闪存阵列。因此,这项研究的进展,我们的知识辐射物质的相互作用和辐射相关的半导体器件的可靠性物理。该研究还将实现无线、无源、原位、实时辐射剂量测定解决方案,该解决方案可以针对广泛的应用进行定制,包括人员剂量测定、安全、空间和商业应用。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(11)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Total Ionizing Dose Effects on the Power-Up State of Static Random-Access Memory
- DOI:10.1109/tns.2023.3236625
- 发表时间:2023-04
- 期刊:
- 影响因子:1.8
- 作者:U. Surendranathan;Horace Wilson;M. Wasiolek;K. Hattar;A. Milenković;B. Ray
- 通讯作者:U. Surendranathan;Horace Wilson;M. Wasiolek;K. Hattar;A. Milenković;B. Ray
Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory
- DOI:10.1109/tns.2021.3052909
- 发表时间:2021-01
- 期刊:
- 影响因子:1.8
- 作者:P. Kumari;U. Surendranathan;M. Wasiolek;K. Hattar;N. Bhat;B. Ray
- 通讯作者:P. Kumari;U. Surendranathan;M. Wasiolek;K. Hattar;N. Bhat;B. Ray
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory
用于 NAND 闪存的全新抗总电离剂量数据存储技术
- DOI:10.1109/tdmr.2022.3189673
- 发表时间:2022
- 期刊:
- 影响因子:2
- 作者:Buddhanoy, Matchima;Sakib, Sadman;Surendranathan, Umeshwarnath;Wasiolek, Maryla;Hattar, Khalid;Milenkovic, Aleksandar;Ray, Biswajit
- 通讯作者:Ray, Biswajit
Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application
用于剂量测定应用的 NAND 闪存误码分析模型
- DOI:10.1109/tns.2021.3125652
- 发表时间:2022
- 期刊:
- 影响因子:1.8
- 作者:Kumari, Preeti;Surendranathan, Umeshwarnath;Wasiolek, Maryla;Hattar, Khalid;Bhat, Narayana;Ray, Biswajit
- 通讯作者:Ray, Biswajit
Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation
电离辐射下 3D NAND 闪存中与层相关的误码变化
- DOI:10.1109/tns.2020.3014261
- 发表时间:2020
- 期刊:
- 影响因子:1.8
- 作者:Kumari, Preeti;Huang, Sijay;Wasiolek, Maryla;Hattar, Khalid;Ray, Biswajit
- 通讯作者:Ray, Biswajit
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Biswajit Ray其他文献
Dermal sling breast reconstruction in small volume breasts
- DOI:
10.1016/j.ejso.2013.01.099 - 发表时间:
2013-05-01 - 期刊:
- 影响因子:
- 作者:
James Harvey;Adam Critchley;Biswajit Ray;Vidya Chandran - 通讯作者:
Vidya Chandran
Introduction of OSNA (One-Step Nucleic acid Amplification) in the intra-operative assessment of the sentinel node (SLN): The clinical impact
- DOI:
10.1016/j.ejso.2014.02.075 - 发表时间:
2014-05-01 - 期刊:
- 影响因子:
- 作者:
Biswajit Ray;Lynda Wyld;Stanley Kohlhardt;Malcolm Reed;Vidya Chandran - 通讯作者:
Vidya Chandran
Experimental and theoretical study of magnetic field effect on EIT resonances in a multilevel V-type atomic system
- DOI:
10.1016/j.chemphys.2024.112340 - 发表时间:
2024-08-01 - 期刊:
- 影响因子:
- 作者:
Chandan Das;Sekhar Dey;Biswajit Ray - 通讯作者:
Biswajit Ray
Assessment of Variation in Evaluation of Patients Undergoing Neoadjuvant Chemotherapy (NAC) for Breast Cancer
- DOI:
10.1016/j.ejso.2019.11.113 - 发表时间:
2020-02-01 - 期刊:
- 影响因子:
- 作者:
Sreenivas Raghunam;Iftikhar Mehmood;Biswajit Ray - 通讯作者:
Biswajit Ray
Measurement and analysis of rotational lines in the (2<em>ν</em><sub>1</sub> + <em>ν</em><sub>2</sub> + <em>ν</em><sub>3</sub>) overtone band of H<sub>2</sub>O perturbed by CO<sub>2</sub> using near infrared diode laser spectroscopy
- DOI:
10.1016/j.cplett.2008.12.074 - 发表时间:
2009-02-03 - 期刊:
- 影响因子:
- 作者:
Priyanka Poddar;Amitava Bandyopadhyay;Debasish Biswas;Biswajit Ray;Pradip N. Ghosh - 通讯作者:
Pradip N. Ghosh
Biswajit Ray的其他文献
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{{ truncateString('Biswajit Ray', 18)}}的其他基金
CNS Core: Small: Ensuring Privacy by Runtime Analog Sanitization of Solid State Storage Devices
CNS 核心:小型:通过固态存储设备的运行时模拟清理确保隐私
- 批准号:
2403540 - 财政年份:2023
- 资助金额:
$ 23.33万 - 项目类别:
Standard Grant
CAREER: Leveraging physical properties of modern flash memory chips for resilient, secure, and energy-efficient edge storage systems
职业:利用现代闪存芯片的物理特性打造弹性、安全且节能的边缘存储系统
- 批准号:
2346853 - 财政年份:2023
- 资助金额:
$ 23.33万 - 项目类别:
Continuing Grant
CAREER: Leveraging physical properties of modern flash memory chips for resilient, secure, and energy-efficient edge storage systems
职业:利用现代闪存芯片的物理特性打造弹性、安全且节能的边缘存储系统
- 批准号:
2145311 - 财政年份:2022
- 资助金额:
$ 23.33万 - 项目类别:
Continuing Grant
CNS Core: Small: Ensuring Privacy by Runtime Analog Sanitization of Solid State Storage Devices
CNS 核心:小型:通过固态存储设备的运行时模拟清理确保隐私
- 批准号:
2007403 - 财政年份:2020
- 资助金额:
$ 23.33万 - 项目类别:
Standard Grant
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