权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

ZnSe Molecular Beam Epitaxial Growth on Charge-Balanced GaAs Surfaces

电荷平衡 GaAs 表面上的 ZnSe 分子束外延生长

基本信息

批准号：
10650010
负责人：
MAEHASHI Kenzo
金额：
$ 2.24万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650010/
关键词：
ZnSe GaAs interface charge balance vicinal GaAs (110) substrates molecular beam epitaxy RHEED transmission electron microscopy photoluminescence X-ray diffraction PL PLトポグラフ電子線描画法マイクロPL XPS RHEED TEM AFM

项目摘要

ZnSe related II-VI widegap semiconductors are promising materials for optoelectronic devices. In order to obtain ideal ZnSe/GaAs interfaces without the charge imbalance, we have investigated ZnSe epitaxial layers grown by molecular beam epitaxy on vicinal GaAs (110) substrates using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), photoluminescence (PL), transmission electron microscopy, high-resolution X-ray diffraction, and PL topography.ZnSe films on vicinal GaAs (110) surfaces misoriented 6° toward (111) A show poor crystal quality and rough surface morphology with (111) facets. On the other hand, RHEED and AFM observations reveal that ZnSe growth proceeds in a layer-by-layer fashion on vicinal GaAs (110) surfaces misoriented 6° toward (111) B and that the surfaces consist of regular arrays of monoatomic steps. The PL spectra are dominated by the near-band-edge emission. However, characteristic structures of stacking faults and high density of threading dislocations are observed. We successfully decreased these stacking faults and threading dislocations lower than two or three orders by incorporating GaAs buffer layers. ZnSe (110) films with high-quality and flat interfaces are coherently grown on vicinal GaAs (110) surfaces misoriented 6° towards (111) B with GaAs buffer layers.

ZnSe系II-VI族宽禁带半导体材料是一种很有前途的光电器件材料。为了获得理想的ZnSe/GaAs界面而不产生电荷不平衡，我们采用反射高能电子衍射（RHEED）、原子力显微镜（AFM）、光致发光（PL）、透射电子显微镜、高分辨X射线衍射、透射电子显微镜、透射电子显微镜、透射电子ZnSe薄膜在GaAs（110）面上的取向与（111）面成6°角，晶体质量差，表面粗糙，有（111）面。另一方面，RHEED和AFM观察表明，ZnSe生长在邻近GaAs（110）表面上以逐层方式进行，该表面与（111）B的取向偏离6°，并且该表面由规则的单原子台阶阵列组成。光致发光光谱主要由近带边发射决定。然而，观察到的堆垛层错和高密度的螺纹位错的特征结构。我们成功地减少这些堆垛层错和线程位错低于两个或三个订单，通过纳入GaAs缓冲层。在与（111）B成6°取向的GaAs（110）邻位面上，用GaAs缓冲层共格生长出界面平整、质量优良的ZnSe（110）薄膜。