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Insertion Effect of the Monolayr of Column II Elements at GaAs/Si Interface

GaAs/Si界面单层II族元素的插入效应

基本信息

批准号：
05650014
负责人：
MAEHASHI Kenzo
金额：
$ 1.41万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650014/
关键词：
GaAs Si interface charge-balanced structure monolayr of column II Be atoms layr grwoth reflection high-energy electron diffraction photoemission spectroscopy UV Ozone treatment Si基板 GaAs薄膜 X線光電子分光法 Zn 界面電荷中性化光電子分光 Ge基板

项目摘要

We propose charge-balance heteroepitaxy, where the GaAs/Si interface is neutralized by inserting one monolayr of column II elements in place of the Ga atoms at GaAs/Si interface. We have constructed this structure using Be atoms, and have investigated the initial stages of GaAs molecular beam epitaxy growth on this charg-balanced structure by high-energy electron diffraction (RHEEED), and ultraviolet and X-ray photoemission spectroscopy (UPS,XPS).After Si (111) substrates which are treated under UV light, are heated at 900ﾟC,the sharp (7x7) RHEED pattern is obtained. As lone-pair states on Si (1x1) -As surfaces gradually decreases as depositing both Be and As at 450ﾟC.After one onolayr deposition of BeAs, this peak completely disappears. After one monolayr GaAs growth on this charge-balanced structure at 450ﾟC,GaAs-like UPS spectrum is obtained. Furthermore, a broad streaked (1x1) RHEED pattern remains till several monolayr GaAs deposition. The Si 2p XPS measurements also support that accumulation of nuclear charge at the interface is extinguished.These measurements reveal that the charge-balanced structure neutralizeds the GaAs/Si interface, and the GaAs growth mode proceeds in a Stranski-Krastanow mode.

我们提出电荷平衡异质外延，其中通过插入一层单层 II 族元素代替 GaAs/Si 界面上的 Ga 原子来中和 GaAs/Si 界面。我们使用Be原子构建了这种结构，并通过高能电子衍射（RHEEED）以及紫外和X射线光电子能谱（UPS，XPS）研究了在这种电荷平衡结构上GaAs分子束外延生长的初始阶段。在紫外光下处理的Si（111）衬底在900°C下加热后，尖锐的（7x7）获得RHEED图案。当在 450°C 沉积 Be 和 As 时，Si (1x1) -As 表面上的孤对电子态逐渐减少。单层沉积 BeAs 后，该峰完全消失。在450°C下在这种电荷平衡结构上生长单层GaAs后，获得了类似GaAs的UPS谱。此外，宽条纹 (1x1) RHEED 图案一直保留到几个单层 GaAs 沉积为止。 Si 2p XPS 测量还支持界面处核电荷积累被消除。这些测量表明电荷平衡结构中和了 GaAs/Si 界面，并且 GaAs 生长模式以 Stranski-Krastanow 模式进行。