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DEVELOPMENT OF THE HIGH REPETITIVE IMPULSE VOLTAGE GENERATOR USING SEMICONDUCTOR SWITCHES

半导体开关高重复脉冲电压发生器的研制

基本信息

批准号：
10650270
负责人：
MAEYAMA Mitsuaki
金额：
$ 1.66万
依托单位：
SAITAMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650270/
关键词：
pulse power generator high repetitiveness impulse generator static IG semiconductor switch L-C resonant charging Marx generator パルスパワー高繰返し動作サイリスタ高速充電 Zルクス回路高繰返し

项目摘要

In this research, we have developed high repetitive impulse voltage generator using semiconductor switches(static IG). Obtained results are as followed :・Proposal of a very high speed and efficient IG charging system.Replacing charging resistances to diodes, we developed low impedance charging system where the resistance component of its impedance is zero in principle and a simple gate system, which enables successive trigger operations for second and above switches, can be applied.Next, using this low impedance property, we adopted the L-C resonant charging method to this IG where we use IGBT switch as an injection switch of the charging system.As a results, in the experiment of 5 stage static IG where C of each stage is 0.1μF and L=500μH, the high speed charging property(charging period 50μs) of our system can be demonstrated.・Proposal of the improved successive gate circuit system.The gate circuit for second and above thristors are composed of 1) voltage source charging section, 2) voltage transform section to generate trigger signal, and 3) output section supplying voltage-current pulse to thristers.A voltage source of capacitor 0.1μF of each gate are charged simultaneously with each stage capacitor of IG through anode-cathode voltage of thristor. And, this gate are guaranteed to operate normally in any case of trigger controlsThis gate circuit is triggered by the anode-cathode voltage increment of thrister. So, there is no need of additional trigger signal system to second and above thrister. Furthermore, in case of using high speed charging system mentioned above, we proposed a novel gate circuit system which make it easier to calibrate its parameters.Using this high speed charging system and improved gate circuit, 4.5kHz repetitive operation (5 stage static IG), and output voltage of 11.8 times of charging DC voltage (20 stage static IG) are achieved experimentally.

在这项研究中，我们研制了使用半导体开关的高重复性冲击电压发生器(静态IG)。·提出了一种高速高效的IG充电系统。用二极管代替充电电阻，研制了低阻抗充电系统，其阻抗的电阻分量原则上为零，可以采用简单的栅极系统，可以连续触发二次及以上开关。其次，利用这种低阻抗特性，我们采用了L-C谐振充电方法，其中使用IGBT开关作为充电系统的注入开关。实验结果表明，在每级C为0.1μF，L=500μH的5级静态IG中，我们的系统的高速充电特性(充电周期50μS)是可以演示的。·提出了改进的连续门电路系统，第二级及以上晶闸管的门电路由1)电压源充电部分、2)产生触发信号的电压变换部分、3)输出部分组成，每个门的电容0.1μF的电压源通过晶闸管的阳极-阴极电压与IG的各级电容器同时充电。并且，该门电路在任何触发控制的情况下都能保证正常工作。因此，不需要额外的触发信号系统来实现第二级和第二级以上的激励器。此外，在使用上述高速充电系统的情况下，我们提出了一种新型的门电路系统，使其参数的校准变得更加容易，利用该高速充电系统和改进的门电路，在实验上实现了4.5 kHz的重复工作(5级静态IG)，输出电压为充电直流电压的11.8倍(20级静态IG)。