DEVELOPMENT OF THE HIGH REPETITIVE IMPULSE VOLTAGE GENERATOR USING SEMICONDUCTOR SWITCHES

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In this research, we have developed high repetitive impulse voltage generator using semiconductor switches(static IG). Obtained results are as followed :・Proposal of a very high speed and efficient IG charging system.Replacing charging resistances to diodes, we developed low impedance charging system where the resistance component of its impedance is zero in principle and a simple gate system, which enables successive trigger operations for second and above switches, can be applied.Next, using this low impedance property, we adopted the L-C resonant charging method to this IG where we use IGBT switch as an injection switch of the charging system.As a results, in the experiment of 5 stage static IG where C of each stage is 0.1μF and L=500μH, the high speed charging property(charging period 50μs) of our system can be demonstrated.・Proposal of the improved successive gate circuit system.The gate circuit for second and above thristors are composed of 1) voltage source charging section, 2) voltage transform section to generate trigger signal, and 3) output section supplying voltage-current pulse to thristers.A voltage source of capacitor 0.1μF of each gate are charged simultaneously with each stage capacitor of IG through anode-cathode voltage of thristor. And, this gate are guaranteed to operate normally in any case of trigger controlsThis gate circuit is triggered by the anode-cathode voltage increment of thrister. So, there is no need of additional trigger signal system to second and above thrister. Furthermore, in case of using high speed charging system mentioned above, we proposed a novel gate circuit system which make it easier to calibrate its parameters.Using this high speed charging system and improved gate circuit, 4.5kHz repetitive operation (5 stage static IG), and output voltage of 11.8 times of charging DC voltage (20 stage static IG) are achieved experimentally.