GROWTH MECHANISM AND PROPERTIES OF HYDROGENATED AMORPHOUS CARBON THIN FILMS

本文研究了用VHF等离子体溅射无定形碳膜的生长条件和薄膜结构。对等离子体处理后薄膜的结构变化也进行了研究，在施加衬底偏压的情况下，形成薄膜的氢分压范围变窄。在衬底偏压下制备的A-C：H薄膜中氢含量与氢分压的关系与无衬底偏压时相似。然而，在施加衬底BiAs的情况下，薄膜中氢含量最大处的分压向低压方向移动。研究发现，薄膜的光学能隙和折射率强烈地依赖于薄膜中的氢含量。此外，还发现等离子体处理后薄膜的结构和光学带隙的变化趋势与所制备的薄膜中的氢含量有关。

IN THIS STUDY, GROWTH CONDITIONS AND THE FILM STRUCTURE OF HAYDROGENATED AMORPHOUS CARBON FILMS BY SPUTTERING USING VHF PLASMA WERE INVESTIGATED. STRUCTURAL CHANGES OF THE FILMS BY PLASMA TREATMENT IS ALSO INVESTIGATED.AS APPLYING SUBSTRATE BIAS, THE RANGE OF HYDROGEN PARTIAL PRESSURE IN WHICH THE FILMS WERE ABLE TO BE FORMED BECOMES NARROW. THE DEPENDENCE OF HYDROGEN CONTENT IN THE A-C: H FILMS PREPARED WITH SUBSTRATE BIAS ON HYDROGEN PARTIAL PRESSURES IS SIMILAR TO THAT WITHOUT SUBSTRATE BIAS. HOWEVER, THE PARTIAL PRESSURE AT THE MAXIMUM OF THE HYDROGEN CONTENT IN THE FILM SHIFTS TOWARD LOW PRESSURE IN CASE OF APPLYING SUBSTRATE BIAS.IT IS FOUND THAT THE OPTICAL ENERGY GAPS AND THE REFRACTIVE INDEX OF THE FILMS DEPEND ON STRONGLY THE HYDROGEN CONTENT IN THE FILMS. FURTHERMORE, IT IS ALSO FOUND THAT TREND OF THE CHANGES OF THE STRUCTURE AND OPTICAL GAPS OF THE FILMS BY PLASMA TREATMENT DEPEND ON THE HYDROGEN CONTENTS IN THE FILMS AS PREPARED.