Ultra High Sensitive Electron Bombarded Imager

超高灵敏度电子轰击成像仪

• 批准号: 10650341
• 负责人: TAKETOSHI Kazuhisa
• 金额: $ 2.11万
• 依托单位: Kokushikan University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650341/
• 关键词: ZnCdTe; EB-gain; Excess noise factor; EB利得; 過剰雑音; EB-利得; ED-AMI; 電子増倍率; S; N; 解像度; 撮像評価実験; 増倍利得; 電子ミクロホトメトリ; 新構造; 画像特性; 寿命; ランダムチェイン; CdTe,GaAs; EBIC動作; 利得

We studied characteristics of electron bombaraded(EB)gain, excess noise factor, resolution, optimum thickness for EB-AMI. ZnCdTe sensor layer is overlaid on AMI. EB-gain is 1500 at 10 kV. Resolution is excellent since there is no connecting fiber. Random noise, white spots, lag and sticking cannot be detectable. Fatigue of running of 5000hr is excellent, is under detection although that of a-Si sensor is strong. The threshold voltage of 2kV is explained as penetration loss of Al, Six_2Nix_2 Optimal sensor thickness is 0.83 μm. Lateral expansion of electron excited in sensor is 0.2μm. theoretical excess noise factor is 1.2 and agrees with observed values.

研究了EB-AMI的电子轰击增益、过剩噪声因子、分辨率、最佳厚度等特性。ZnCdTe传感器层覆盖在AMI上。EB增益在10 kV时为1500。由于没有连接光纤，因此分辨率非常好。无法检测到随机噪声、白色斑点、滞后和粘连。运行5000小时的疲劳是优秀的，是在检测下，虽然a-Si传感器的强。阈值电压为2kV的原因是Al、Six_2Nix_2的穿透损耗。最佳传感器厚度为0.83 μm。传感器中激发的电子横向膨胀为0.2μm。理论过量噪声因子为1.2，与实测值一致。

项目成果

Taketosi, Andd: "Sludies of multiplication ponchos of EB-AMI"IEEE.ED.. 46. 1619-1622 (1999)

Taketosi, Andd：“EB-AMI 乘法斗篷的研究”IEEE.ED.. 46. 1619-1622 (1999)

K.Taketoshi: "Developmento of a Novel Image Intensifier of an Amplified MOS Imager Overland with EB a-Si" IEEE ED. 45,4. 778-784 (1998)

K.Taketoshi：“采用 EB a-Si 开发新型放大 MOS 成像仪图像增强器”IEEE ED。

"Studies of Multiplication Process of a Novel Image Intensifier of an Amplified Metal-Oxide-Semiconductor Imager Overlaid with Elect-ron -Bombarded Amorphous Silicon" IEEE ED. accepted to be published. (1999)

“电子轰击非晶硅覆盖的放大金属氧化物半导体成像器的新型图像增强器的乘法过程研究”IEEE ED。

Saito, Taketoshi, Kozu: "Study of Ring-to-dam structural change by RNC"J. Vac. Soc. Jap. Vol.44 Vol.2. 105-108 (2001)

Saito、Taketoshi、Kozu：“RNC 对环坝结构变化的研究”J。

Saito, Taketoshi: "Development of ED-AMI"J.Vac.Soc.. 44. 105-108 (2001)

Saito Taketoshi：“ED-AMI 的发展”J.Vac.Soc.. 44. 105-108 (2001)