Ultra High Sensitive Electron Bombarded Imager

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We studied characteristics of electron bombaraded(EB)gain, excess noise factor, resolution, optimum thickness for EB-AMI. ZnCdTe sensor layer is overlaid on AMI. EB-gain is 1500 at 10 kV. Resolution is excellent since there is no connecting fiber. Random noise, white spots, lag and sticking cannot be detectable. Fatigue of running of 5000hr is excellent, is under detection although that of a-Si sensor is strong. The threshold voltage of 2kV is explained as penetration loss of Al, Six_2Nix_2 Optimal sensor thickness is 0.83 μm. Lateral expansion of electron excited in sensor is 0.2μm. theoretical excess noise factor is 1.2 and agrees with observed values.