Devolopment of Amplified GaAs Imager

放大型砷化镓成像仪的开发

• 批准号: 07650403
• 负责人: TAKETOSHI Kazuhisa
• 金额: $ 0.45万
• 依托单位: Kokushikan University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650403/
• 关键词: APD; EBIC; NOISE REDUCTION; EXCESS NOISE FACTOR; AMILIFIED IMAGER; RESOLUTION; LAG; GaAs; EB-IC; demountable; 過剰雑音係数; 雑音軽減効果; a-GaAs; Noise reduction; RDF; Phots conduction; electron diffraction; 非晶質; 多結晶; 移動度

We developed the image devices of APD type, EB type (Electron Bombardmet type) and injection type, which were made of GaAs single crystalline film. The thinning method was done by a polishing technique. We measured the pickup images by a demountable apparatus attached to an evaporator. We used a low velocity beam scanning system, and also used high velocity beam scanning system for precise lag characteristics. The resolution limits of the APD and EB type are more than 550 TVL.The lags of APD type and EB type are zero. The excess noise factor of APD gain of ten is unity, whereas the one of APD gain of 100 is 10, almost all data are like those of a-Se. There may be the noise reduction effect based on dipole model in a-Se because of the presence of a weak negative lag. The excess noise factor of EB type is 1.2 for EB gain from 100 to 1000. The dark current of an injection type is enormous, we cannot measured the excess noise factor. The heat resistance APD made by GaAs is lager than that of APD made by a-Se, the working voltage is tenth of the voltage of a-Se APD.These features improve the reproducibility, they serve a super high sensitive imager of mixed mode of EB and APD.

我们研制了APD型、EB型（电子轰击型）和注入型GaAs单晶薄膜成象器件。减薄方法通过抛光技术完成。我们测量的摄像头图像的可拆卸装置连接到蒸发器。我们使用了低速束扫描系统，并且还使用了高速束扫描系统以获得精确的滞后特性。APD型和EB型的分辨率极限均大于550 TVL，延迟均为零。APD增益为10时的剩余噪声因子为1，而APD增益为100时的剩余噪声因子为10，几乎所有的数据都与a-Se的数据类似。由于a-Se中存在弱的负滞后，可能存在基于偶极子模型的降噪效应。对于EB增益从100到1000，EB型的过量噪声因子为1.2。注入型的暗电流很大，我们无法测量过量噪声因子。由GaAs制成的APD的耐热性比由a-Se制成的APD大，工作电压是a-Se APD电压的十分之一，这些特点提高了再现性，适合EB和APD混合模式的超高灵敏度成像器。

项目成果

竹歳、宮本: "a-GaAsの構造" JJAP.

宫本武俊：“a-GaAs 的结构”JJAP。

K.Taketoshi, F.Andoh: "Development of a novel evaporator using a source electrode and a liquid contact exchangeable via pre-evacuation chamber" J.Vac.Soc.Jpn.Vol.39, No.7. 346-351 (1996)

K.Taketoshi、F.Andoh：“使用源电极和可通过预抽真空室交换液体接触的新型蒸发器的开发”J.Vac.Soc.Jpn.Vol.39，No.7。

K.Taketoshi,F.Andoh: "Structural Studies on Silicon Ritellulied" Jpn.J.Appl,Phys.34・No6A. 3192-3197 (1995)

K.Taketoshi、F.Andoh：“硅 Ritellulied 的结构研究”Jpn.J.Appl，Phys.34·No6A (1995)。

竹歳: "a-GaAsの特性" JJAP.

Taketoshi：“a-GaAs 的特性”JJAP。

K. Taketosi, F. Andoh: "The noise reduction effect of amplified metal-oxide-semiconductor imager device" Jpn. J. APPL. Phyo.34NO. 7A. 3570-3575 (1995)

K. Taketosi、F. Andoh：“放大金属氧化物半导体成像装置的降噪效果”Jpn。