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Study of Electron Emission Properties of CVD Diamond Thin Film in Low Electric Field

低电场下CVD金刚石薄膜电子发射性能研究

基本信息

批准号：
10650668
负责人：
UEHARA Masato
金额：
$ 2.43万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650668/
关键词：
diamond thin film microwave CVD semiconductor field emission

项目摘要

Diamond thin films were formed on n-type(100)Si wafer by microwave plasma CVD method and measured their field emission property. The nuclei were deposited by carburization in CィイD22ィエD2HィイD22ィエD2-HィイD22ィエD2 system and bias treatment, or seeding by diamond powder. The deposited diamond particles were grown in(CHィイD23ィエD2)ィイD22ィエD2CO-HィイD22ィエD2 system.(CィイD22ィエD2HィイD25ィエD2)ィイD22ィエD2NH gas was used as source of N dopant. The reaction temperature was 600-900℃(on the substrate).1. Morphology and Structure of Diamond Thin FilmsThe thin film which was nucleated by bias treatment and grown at 800℃ was oriented(100) polycrystalline film. The facet was clearly observed in films doped 0-500ppm of(CィイD22ィエD2HィイD25ィエD2)ィイD22ィエD2NH. In the film doped 1000-5000ppm, facet was not observed clear. By Raman spectra analysis, the peaks of diamond and graphite was observed clearly in the films doped 0-2000ppm. On the other hand, in the 5000ppm doped film, no peak of diamond was observed. The films which were nucleated by seeding was non-oriented.2. Field Emission PropertyThe field emission property was carried out in the range of 0-25V/m. The distance of film and anode was 20mm. In the case of the films nucleated by bias treatment, and grown at 800℃ , doped 300-2000ppm, the electron emission was confirmed. In particular, in the 500ppm doped film, the electron was emitted at 4.1V/m and the large electric current was observed, whereas the morphology and structure was same as non-doped film in which no emission was observed. In the 5000ppm doped film whose morphology and structure was non-facet, the emission was not observed. In the case of films nucleated by seeding, the emission was observed at 20V/m in the only 1000ppm doped film grown at 700℃.Thus, this investigation suggested that(CィイD22ィエD2HィイD25ィエD2)ィイD22ィエD2NH dope was useful to the improvement of field emission property of diamond film, and the morphology(orientation…)and structure also related filed emission property.

采用微波等离子体化学气相沉积法在n型（100）Si衬底上制备了金刚石薄膜，并测量了其场发射特性。在C_（12）D_（22）H_（12）D_（22）H_（12）D_（22）D_（22）H_（12）D_（22）系统中渗碳并偏压处理，或金刚石粉籽晶，沉积晶核。沉积的金刚石颗粒是在（CH_（23）CH_（23））CH_（22）CH_（22）CH_（22）CO_（22）CH_（22）CH_（22）CH_（22）CO_（22）CH_（22）CH_（22）CH_（22）CH_（22）CO_（22）体系中生长的。使用（C = D22）N = D2 H = D25）N = D22）N = D2 NH气体作为N掺杂剂源。反应温度为600-900℃（在基底上）。金刚石薄膜的形貌和结构经偏压成核，在800℃下生长的金刚石薄膜为（100）取向的多晶薄膜。在掺杂0- 500 ppm（C_（22）N_（25）N在掺杂1000- 5000 ppm的薄膜中，观察到的刻面不清晰。通过拉曼光谱分析，在0- 2000 ppm掺杂的薄膜中观察到了明显的金刚石和石墨峰。另一方面，在5000 ppm掺杂的膜中，没有观察到金刚石峰。晶种成核后的薄膜是无取向的。场发射性能在0- 25 V/m范围内进行了场发射性能测试。膜与阳极的距离为20 mm。在800℃下生长，掺杂浓度为300- 2000 ppm，经偏压处理成核的薄膜中，证实了电子发射。特别地，在500 ppm掺杂的膜中，电子以4.1V/m发射并且观察到大电流，而形貌和结构与未掺杂的膜相同，其中未观察到发射。在掺杂浓度为5000 ppm的薄膜中，没有观察到发光现象，其形貌和结构均为非小面结构。在晶种成核的情况下，在700℃下生长的掺杂浓度仅为1000 ppm的金刚石薄膜在20 V/m处就观察到了场发射，因此研究表明，（C_（22）N_（25）N_（