Photo-Induced Structural Changes on Compound Semiconductor Surfaces

化合物半导体表面的光致结构变化

• 批准号: 11640314
• 负责人: KANASAKI Jun'ichi
• 金额: $ 2.11万
• 依托单位: Osaka City University (2000)Nagoya University (1999)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11640314/
• 关键词: compound semiconductor; surface; laser; photo-induced structural change; photo-induced desorption; Indium Phosphide; scanning tunneling microscopy; femtosecond non-resonant ionization spectroscopy; フェムト秒非共鳴イオン化分光; 電子励起効果

Structural changes and desorption of constituent atoms induced by ns-laser irradiations of cleaved InP (110)-(1x1) surface have been studied by means of scanning tunneling microscopy (STM) and high-sensitivity measurements of desorbed species using femtosecond non-resonant ionization spectroscopy. Atomic imaging of the irradiated surfaces has shown that efficient bond breaking of surface P atoms takes place via electronic processes upon a surface specific transition band on the surface, resulting formation of isolated vacancies at intrinsic P-sites. Repeated irradiations of the surface induces efficient growth of P vacancy-strings elongated selectively along In-P chains ([11^^-0] direction), demonstrating the preferential removal of atoms at neighboring sites of vacancies. The observed formation of vacancy strings with significantly enhanced yields than statistic values is possibly explained by efficient transfer along [11^^-0] direction and condensation of surface excited species. The … More efficiencies of bond breaking at intrinsic lattice sites and sites neighboring vacancies show non-linear increase with increasing excitation intensity, suggesting that non-linear process are included in the bond-breaking.High sensitive measurements of desorbed species from InP (110)-(1x1) and (001)-(4x2) surfaces have shown that laser-induced bond breaking is accompanied with desorption of P, P_2 and In, the relative yields of which are strongly dependent on the surface structure. On the cleaved (110) surface, dominant desorbed species is P atom, yield of which decreases with increasing the number of laser shots on the same spot. Time-of-flight spectra of P-atoms acquired for various excitation intensities were divided into two components, fast and slow components, with the fluence-independent peak flight time and the velocity distribution. The fluence dependences of desorption yields for the fast and slow components are superlinear, and agree with those of the bond breaking efficiencies at intrinsic perfect P sites and at neighboring atomic sites of P-vacancies, respectively. Based on analyses of the non-linear efficiencies, we suggest that two-hole localization is included as a primary step of the electronic bond-breaking on this surface. Less

通过扫描隧道显微镜 (STM) 和飞秒非共振电离光谱对解吸物质的高灵敏度测量，研究了纳秒激光照射解理 InP (110)-(1x1) 表面引起的组成原子的结构变化和解吸。辐照表面的原子成像表明，表面 P 原子的有效键断裂是通过表面特定过渡带上的电子过程发生的，从而导致在本征 P 位点形成孤立的空位。表面的重复辐照诱导了沿 In-P 链（[11^^-0] 方向）选择性伸长的 P 空位串的有效生长，证明了相邻空位位点原子的优先去除。观察到的空位串形成的产率显着高于统计值，这可能是通过沿 [11^^-0] 方向的有效转移和表面激发物质的凝聚来解释的。本征晶格位点和邻近空位位点的键断裂效率随着激发强度的增加而呈现非线性增加，这表明键断裂中包含非线性过程。对 InP (110)-(1x1) 和 (001)-(4x2) 表面解吸物质的高灵敏测量表明，激光诱导的键断裂伴随着 P、P_2 和 In 的解吸，其相对产率强烈依赖于表面结构。在解理的（110）表面上，主要解吸物质是P原子，其产率随着同一点上激光照射次数的增加而降低。在不同激发强度下获得的 P 原子的飞行时间光谱被分为两个分量，快分量和慢分量，具有与注量无关的峰值飞行时间和速度分布。快组分和慢组分解吸产率的注量依赖性是超线性的，并且分别与本征完美 P 位点和 P 空位相邻原子位点的键断裂效率一致。基于非线性效率的分析，我们建议将两孔定位作为该表面上电子键断裂的主要步骤。较少的

项目成果

K.Tanimura, J.Kanasaki, and K.Ishikawa: "Laser-Induced Electronic Instability on Semiconductor Surfaces of Si (111)-(7x7) and InP (110)-(1x1)"Proceedings of the 25^<th> International Conference on Physics of Semiconductors_.

K.Tanimura、J.Kanasaki 和 K.Ishikawa：“Laser-Induced Electronic Instability on Semiconductor Surfaces of Si (111)-(7x7) and InP (110)-(1x1)”第 25 届国际会议论文集

金崎順一: "半導体表面構造の光誘起変化と構成原子の脱離"固体物理. 34巻・8号. 657-668 (1999)

Junichi Kanazaki：“半导体表面结构的光致变化和组成原子的分离”固体物理学，第 34 卷，第 8 期，657-668（1999 年）。

N.Itoh: "Laser-Induced Desorption from STM-Selected Semiconductor Sites"Progress in Surface Science. 61・1. 1-19 (1999)

N.Itoh：“STM 选择的半导体位点的激光诱导解吸”表面科学进展 61・1（1999）。

K.Tanimura: "Laser-Induced Electronic Instability on Semiconductor Surfaces of Si (111)-(7x7) and InP (110)-(1x1)"Proceedings of the 25th International Conference on Physics of Semiconductors. (2001)

K.Tanimura：“Si (111)-(7x7) 和 InP (110)-(1x1) 半导体表面上的激光诱导电子不稳定性”第 25 届国际半导体物理会议论文集。

K.Tanimura and J.Kanasaki: "Laser-Induced Electronic Bond Breaking and Structural Changes on Semiconductor Surfaces"SPIE. Vol.3618 (invited paper). 26-35 (1999)

K.Tanimura 和 J.Kanasaki：“半导体表面激光诱导电子键断裂和结构变化”SPIE。