Investigation of the Novel Characteristics of Widebandgap Semiconductor Materials Grown by Multi-Phase Epitaxy

聚焦多相结构，并通过分子束外延生长该层。理论分析表明，该结构生长在GaAs衬底上，GaAs衬底是各种器件结构的常规材料。由于ZnS和CdS都具有纤锌矿结构，因此ZnCdS最初被认为是多相结构的候选者。这种材料的另一个优点是GaAs和ZnCdS之间的晶格匹配是可能的，从理论计算上也考虑了其他材料系统与InP衬底的晶格匹配. MBE和MOCVD生长的ZnCdS外延层的晶体结构都是可以调节的，通过改变生长参数可以形成锌钛矿结构和纤锌矿结构.晶体结构可以被控制，而与衬底表面排列无关，即（001）、（111）A和（111）B表面。4.5.提出了X射线φ扫描，并表明这是区分这两种结构的简单而强大的技术。6.7. ZnCdMgOSSe也被认为是一种可以与InP晶格匹配的多相结构材料。

Multi-phase structures were focused and the layer was grown by molecular beam epitaxy. Theoretical approach was also performed.The structure was grown on the GaAs substrate which was a conventional material for the various device structures. ZnCdS was initially focused for the candidate of the multi-phase structure since both ZnS and CdS exhibit Zincblende structures as well as Wurtzite structures. The other advantage of this material is that the lattice matching between GaAs and ZnCdS is possible.Other materials system lattice match to the InP substrate was also considered from the theoretical calculation.1. The crystal structure of ZnCdS epilayers grown by MBE or by MOCVD can be tuned, and zincblende structures as well as wurtzite structures can be formed by changing the growth parameters.2. The crystal structre can be controlled regardless of the substrate surface arrangement, namely (001), (111)A, and (111)B surfaces.3. 4.5. X-ray phi-scan was proposed and shown that it was a simple and powerful technique to distinguish the two structures.6.7. ZnCdMgOSSe was also considered as a multi-pahse structure materials which can be lattice match to InP.