Development of diffracted electron spectroscopy in RHEED and its application to structural and morphological study on crystal surface
Development of diffracted electron spectroscopy in RHEED and its application to structural and morphological study on crystal surface
批准号:
11650034
负责人:
HORIO Yoshimi
金额:
$2.05万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001
中文摘要
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英文摘要
Newly improved energy-filtered reflection high-energy electron diffraction apparatus has been constructed, which is combined with energy-loss measurement system using channeltron detector, high frequency modulation of retarding voltage and lock-in amplifier. The modulation amplitude with frequency of ω is superimposed on the retarding voltage. Transmitted electron beam passing through the energy filter is detected by the movable channeltron. The amplified electron beam current is finally inputted to lock-in amplifier. When the signal component of frequency ω is outputted from the lock-in amplifier, the energy-differentiated spectra, conventional energy loss spectra, are directly obtained.Using this apparatus, energy loss spectra of specularly reflected electron beam have been measured for Si(111)7x7 surface and In over-layer on it. The obtained results are summarized as follows. 1. For Si(111)7x7 surface, the averaged number of surface plasmon excitations changes in proportion to 1/sin θ /where θ denotes the glancing angle. It has been confirmed that the experimentally obtained coefficient of 1/sin θ nearly agree with the theoretical value calculated by Lucas. 2. Especially, it has been found for the first time that the number of surface plasmon excitations abnormally increases at θ = 4° for [11-2] azimuth due to diffraction condition. 3. Surface plasmon energy of Si, 11.7 eV, hardly changes even for 1 monolayer coverage of In. Over 1 monolayer, the energy value gradually decrease and becomes constant value of 10.4 eV, at about 30A deposition thickness. The energy value is still larger than the surface plasmon energy of In, 8.9 eV, and nearly corresponds to the middle of Si and In surface plasmon energies, which is considered to be strongly influenced by the interface region between Si and In.The EF-RHEED apparatus combined with the energy loss measurement system will become powerful tool for unknown inelastic scattering field in RHEED.
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S.Hara et al.: "Effect of Surface Plasmons on Energy Filtered RHEED Rocking Curves from a Si(111)-7x7 Surface"Phys.Stat.Sol.(a). 176. 925-936 (1999)
S.Hara 等人:“表面等离子体激元对 Si(111)-7x7 表面能量过滤 RHEED 摇摆曲线的影响”Phys.Stat.Sol.(a)。
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Y.Horio: "Correlated Thermal Diffuse Scattering in Energy-Filtered RHEED pattern"Bulletin of Daido Institute of Technology. 37. 87-90 (2001)
Y.Horio:“能量过滤 RHEED 模式中的相关热扩散散射”大同工业研究所通报。
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Y.Horio: "Structural study of Al deposited surface on Si(111)√3x√3-Al"Appl.Surf.Sci.. 169-170. 104-108 (2001)
Y.Horio:“Si(111)√3x√3-Al 上 Al 沉积表面的结构研究”Appl.Surf.Sci.. 169-170 (2001)。
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Y.Horio et al.: "AFM Observation of the Surface Morphology of CaF_2 Film Grown on Si(111)7x7 Substrate"J.Surf.Sci.Soc.Jpn.. 22. 552-560 (2001)
Y.Horio等人:“在Si(111)7x7基板上生长的CaF_2膜的表面形态的AFM观察”J.Surf.Sci.Soc.Jpn..22.552-560(2001)
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水町浩: "表面処理技術ハンドブック"エヌ・ティー・エス. 949 (2000)
水町浩:《表面处理技术手册》NTS 949 (2000)。
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共 31 条
Study of elastic and inelastic scattering electrons in diffraction pattern by energy filtered RHEED observation
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批准号:08455018
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.46万
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财政年份:1996
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负责人:HORIO Yoshimi
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依托单位:
海外基金