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Development of Silicon Carbide (SiC) Thin Film Preparation Process by Pulsed Laser Deposition' Method

脉冲激光沉积法碳化硅（SiC）薄膜制备工艺的开发

基本信息

批准号：
11650307
负责人：
SUDA Yosihaki
金额：
$ 2.24万
依托单位：
SASEBO NATIONAL COLLEGE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650307/
关键词：
silicon Carbide Pulsed laser Deposition method Sic Thin Film FT-IR Nd;YAG Laser DC Bias XRD Optical Emission パルスレーザデポジョン外部電磁界 Nd:YAG Laser オージェ電子分光パルスレーザデポジション

项目摘要

Silicon carbide (SiC) is a wide-band-gap semiconductor with high thermal stability, excellent resistance to chemical attack, high thermal conductivity, high breakdown electron mobility, and high electric field. These properties favor this material for applications of electronic and optoelectronic devices. Polycrystalline SiC films can be fabricated as blue-emitting diodes and as high power devices. Therefore, SiC films have been fabricated on Si(lOO) substrates by using several methods, including chemical vapor deposition, sputtering, laser ablation, evaporation, molecular beam epitaxy and carbon-ion implantation.In this study, we develop a new pulsed laser deposition (PLD) method with a cross-magnetic field, ion-beam source and a DC bias to synthesize crystalline SiC films. The laser beam was focused on the SiC targets. After 18000 laser pulses at a 10 Hz repetition rate, the deposition process was completed. All samples were analyzed by a field-emission scanning electron microscopy ( … More FE-SEM), Auger electron spectroscopy (AES), atomic force microscope (AFM), glancing-angle X-ray Diffraction (GXRD), an energy-dispersive X-ray analyzer (EDX), Fourier transform infrared spectroscopy (FT-IR). An optical multichannel analyzer (OMA) with a 1024 photodiode array detected the optical emissions from the plasma plume generated by the pulsed Nd : YAG laser irradiation. The Si/C composition ratio is affected by the substrate bias voltage and methane gas pressure. FT-IR measurement indicates the presence of a Si-C bond stretching. FE-SEM observation shows that the surface of the film prepared using PLD is smooth and pinhole-free. The degree of crystallinity of the prepared films, characterized by GXRD, increases with increasing substrate temperature and decreasing methane gas pressure. Cross magnetic field can control the shape of the plasma plume. We prepared CrC, WC, SiC, TiC, CBN, SiN, TaN films as a hard material and SnOs, WOa films as a gas sensor material by PLD method. Our experiments show that our new PLD process is simple and effective technique to fabricate high-quality and large-area uniform ceramic thin films without droplets such as nitride, carbide and oxide films. It might be very important to study PLD process scientifically and industrially. Less

碳化硅（SiC）是一种具有高热稳定性、优异的抗化学侵蚀性、高导热性、高击穿电子迁移率和高电场的宽带隙半导体。这些特性有利于该材料在电子和光电子器件中的应用。多晶SiC薄膜可制成蓝色发光二极管和大功率器件。因此，采用化学气相沉积、溅射、激光烧蚀、蒸发、分子束外延和碳离子注入等方法在Si（lOO）衬底上制备了SiC薄膜。在这项研究中，我们开发了一种新的脉冲激光沉积（PLD）方法，该方法具有交叉磁场，离子束源和直流偏压来合成晶体SiC薄膜。激光束聚焦在碳化硅靶上。在重复频率为10 Hz的18000次激光脉冲后，完成沉积过程。采用场发射扫描电镜（FE-SEM）、俄歇电子能谱（AES）、原子力显微镜（AFM）、扫瞄角x射线衍射（GXRD）、能量色散x射线分析仪（EDX）、傅里叶变换红外光谱（FT-IR）对样品进行分析。采用1024光电二极管阵列的光学多通道分析仪（OMA）检测了脉冲Nd: YAG激光照射产生的等离子体羽流的光发射。Si/C组成比受衬底偏压和甲烷气体压力的影响。FT-IR测量表明存在Si-C键拉伸。FE-SEM观察表明，用PLD制备的薄膜表面光滑，无针孔。制备的薄膜结晶度随衬底温度的升高和甲烷气体压力的降低而增大。交叉磁场可以控制等离子体羽流的形状。我们用PLD方法制备了CrC、WC、SiC、TiC、CBN、SiN、TaN薄膜作为硬材料，SnOs、WOa薄膜作为气敏材料。实验结果表明，该工艺是一种简单有效的工艺，可以制备出高质量、大面积均匀的无氮化物、无碳化物、无氧化物等液滴的陶瓷薄膜。对可编程逻辑器件工艺的科学研究和工业应用具有重要意义。少