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Development of Pulsed Laser Deposition Method with Ions in the Plume Controlled by HV Pulses

高压脉冲控制羽流中离子的脉冲激光沉积方法的发展

基本信息

批准号：
11680489
负责人：
IKEGAMI Tomoaki
金额：
$ 1.47万
依托单位：
Kumamoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11680489/
关键词：
Pulsed Laser Deposition Ion Implantation TiN DLC Laser Induced Fluorescence 2D-LIF C_2 C_3 プラズマエキシマレーザ

项目摘要

TiN thin films were prepared in the nitrogen gas environment and DLC films were prepared in vacuum by using the KrF Excimer pulsed laser deposition (PLD) method. During depositing the films, negative high voltage pulses, -0.5kV〜-6kV amplitude and 20μs duration and synchronized with the laser, were applied to the substrate holder to accelerate the ions in the plasma plume toward the substrate. The effects of the pulses on the deposited films were investigated by characterizing the film properties using EPMA, UV-visible absorbance spectrometer, FTIR, nanoindentator, AFM etc. TiN plasma plumes were diagnosed by the emission spectroscopy to investigate ionic species, and the number density profiles of C_2 and C_3 in the carbon plasma plumes were measured by the 2D-LIF method.In the case of TiN film deposition, application of pulses to the substrate holder increased the atomic ratio N/Ti of the films from 0.5 to 1.1 and decreased their resistivity from 30mΩ・cm to 7mΩ・cm. As for the DLC films, by applying -0.5kV pulses, optical band gap of the films increased from 1.0eV to 1.3eV and absorbance due to sp^3C also increased. The nanoindentation results showed the hardness of the DLC films prepared with -0.5kV pulses was tenfold larger than that prepared without pulses.The results of the optical measurement showed that emission from the ionic species increased and the species were energized by applying pulses. The 2D-LIF measurement showed the C_2 and C_3 in the carbon plasma plumes were localized near the target and exist until about 3μs after ablation. Their kinetic energy was small and the profiles of C_2 was affected by pulses applied to the substrate holder.It was found that applying negative pulses in the PLD method improved the chemical, optical and physical properties of the deposited films.

采用KrF准分子脉冲激光沉积（PLD）方法在氮气环境下制备TiN薄膜，在真空环境下制备DLC薄膜。在沉积过程中，在衬底支架上施加与激光同步、振幅为-0.5kV ~ -6kV、持续时间为20μs的负高压脉冲，加速等离子体羽流中的离子向衬底移动。通过EPMA、紫外-可见吸收光谱、FTIR、纳米压痕仪、AFM等测试手段，研究了脉冲对薄膜性能的影响。利用发射光谱对TiN等离子体羽流进行了诊断，研究了离子种类，并利用2D-LIF方法测量了碳等离子体羽流中C_2和C_3的数量密度分布。在TiN薄膜沉积的情况下，在衬底支架上施加脉冲使薄膜的原子比N/Ti从0.5增加到1.1，并将其电阻率从30mΩ·cm降低到7mΩ·cm。对于DLC薄膜，施加-0.5kV脉冲后，薄膜的光学带隙从1.0eV增加到1.3eV， sp^3C引起的吸光度也增加。纳米压痕结果表明，-0.5kV脉冲制备的DLC膜的硬度比无脉冲制备的DLC膜的硬度大10倍。光学测量结果表明，离子种类的发射量增加，离子种类被脉冲激励。2D-LIF测量结果表明，碳等离子体羽流中的C_2和C_3在烧蚀后约3μs仍存在于目标附近。它们的动能很小，施加在衬底支架上的脉冲对C_2的分布有影响。研究发现，在PLD方法中施加负脉冲可以改善沉积薄膜的化学、光学和物理性能。