Development of Pulsed Laser Deposition Method with Ions in the Plume Controlled by HV Pulses
Development of Pulsed Laser Deposition Method with Ions in the Plume Controlled by HV Pulses
批准号:
11680489
负责人:
IKEGAMI Tomoaki
金额:
$1.47万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000
中文摘要
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英文摘要
TiN thin films were prepared in the nitrogen gas environment and DLC films were prepared in vacuum by using the KrF Excimer pulsed laser deposition (PLD) method. During depositing the films, negative high voltage pulses, -0.5kV〜-6kV amplitude and 20μs duration and synchronized with the laser, were applied to the substrate holder to accelerate the ions in the plasma plume toward the substrate. The effects of the pulses on the deposited films were investigated by characterizing the film properties using EPMA, UV-visible absorbance spectrometer, FTIR, nanoindentator, AFM etc. TiN plasma plumes were diagnosed by the emission spectroscopy to investigate ionic species, and the number density profiles of C_2 and C_3 in the carbon plasma plumes were measured by the 2D-LIF method.In the case of TiN film deposition, application of pulses to the substrate holder increased the atomic ratio N/Ti of the films from 0.5 to 1.1 and decreased their resistivity from 30mΩ・cm to 7mΩ・cm. As for the DLC films, by applying -0.5kV pulses, optical band gap of the films increased from 1.0eV to 1.3eV and absorbance due to sp^3C also increased. The nanoindentation results showed the hardness of the DLC films prepared with -0.5kV pulses was tenfold larger than that prepared without pulses.The results of the optical measurement showed that emission from the ionic species increased and the species were energized by applying pulses. The 2D-LIF measurement showed the C_2 and C_3 in the carbon plasma plumes were localized near the target and exist until about 3μs after ablation. Their kinetic energy was small and the profiles of C_2 was affected by pulses applied to the substrate holder.It was found that applying negative pulses in the PLD method improved the chemical, optical and physical properties of the deposited films.
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青木振一、井上知顯、蛯原健治: "KrFエキシマレーザを用いたグラファイトアブレーションのレーザプラズマプルーム特性"電気学会論文誌. 119-A・7. 1059-1064 (1999)
Shinichi Aoki、Chien Inoue、Kenji Ebihara:“使用 KrF 准分子激光进行石墨烧蚀的激光等离子体羽流特性”日本电气工程师协会学报 119-A・7(1999 年)。
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通讯作者:
T.Ikegami, S.Ishibashi, Y.Yamagata, K.Ebihara, R.K.Thareja, J.Narayan: "Spatial Distribution of Carbon Species in Laser Ablation of Graphite Target"Journal of Vacuum Science and Technology (JVST). (in print). (2001)
T.Ikegami、S.Ishibashi、Y.Yamagata、K.Ebihara、R.K.Thareja、J.Narayan:“激光烧蚀石墨靶材中碳物质的空间分布”真空科学与技术杂志 (JVST)。
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T.Ikegami, T.Ohshima, M.Nakao, S.Aoqui, K.Ebihara: "Impression of High Voltage Pulses on Substrate in Pulsed Laser Deposition"Journal of Vacuum Science and Technology (JVST). (in print). (2001)
T.Ikegami、T.Ohshima、M.Nakao、S.Aoqui、K.Ebihara:“脉冲激光沉积中高压脉冲对基材的印象”真空科学与技术杂志 (JVST)。
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通讯作者:
T.Ikegami,T.Ohshima,M.Nakao,S.Aoqui,K.Ebihara: "Impression of High Voltage Pulses on Substrate in Pulsed Laser Deposition"Journal of Vacuum Science and Technology (JVST). (発表予定). (2001)
T.Ikegami、T.Ohshima、M.Nakao、S.Aoqui、K.Ebihara:“脉冲激光沉积中高压脉冲对基材的印象”真空科学与技术杂志(JVST)(待出版)。 2001)
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通讯作者:
T.Ikegami,S.Ishibashi,Y.Yamagata,K.Ebihara,R.K.Thareja,J.Narayan: "Spatial Distribution of Carbon Species in Laser Ablation of Graphite Target"Journal of Vacuum Science and Technology (JVST). (発表予定). (2001)
T. Ikegami、S. Ishibashi、Y. Yamagata、K. Ebihara、R. K. Thareja、J. Narayan:“石墨靶激光烧蚀中碳物质的空间分布”真空科学与技术杂志 (JVST)(待出版)。 )(2001)
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